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    Chemical vapor deposition apparatus
    64.
    发明专利
    Chemical vapor deposition apparatus 有权
    化学蒸气沉积装置

    公开(公告)号：JP2010161340A

    公开(公告)日：2010-07-22

    申请号：JP2009239793

    申请日：2009-10-16

    Applicant: Samsung Led Co Ltd ,  サムソン エルイーディー カンパニーリミテッド.

    Inventor： TAKEYA MOTONOBU ,  YOO SANG DUK ,  JANG SUNG HWAN

    IPC: H01L21/205

    CPC classification number: C23C16/4412 ,  C23C16/4401 ,  C30B25/08 ,  C30B25/14 ,  Y02C20/30 ,  Y02P70/605

    Abstract: PROBLEM TO BE SOLVED: To prevent particles generated by epitaxial growth reaction from falling in association with opening or closing operation of a cover of a chamber.
    SOLUTION: The chemical vapor deposition apparatus includes a substrate ceiling defining a reaction chamber into which a reaction gas is supplied and in which a substrate is epitaxially grown, and an exhaust separatable from the substrate ceiling and from which an exhaust gas after the epitaxial growth reaction is discharged. The exhaust is provided with a particle formation part on which particles generated upon the epitaxial growth of the substrate are deposited.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：防止外延生长反应产生的颗粒与室的盖的打开或关闭操作相关联地落下。 解决方案：化学气相沉积设备包括限定反应室的衬底顶板，反应气体被供应到反应室中，其中衬底被外延生长，以及从衬底天花板可分离的废气， 外延生长反应被排出。 排气设置有颗粒形成部分，在其上沉积在基板外延生长时产生的颗粒。 版权所有（C）2010，JPO＆INPIT

    Material gas concentration controller
    65.
    发明专利
    Material gas concentration controller 审中-公开
    材料气体浓度控制器

    公开(公告)号：JP2010109303A

    公开(公告)日：2010-05-13

    申请号：JP2008282623

    申请日：2008-10-31

    Applicant: Horiba Ltd ,  Horiba Stec Co Ltd ,  株式会社堀場エステック ,  株式会社堀場製作所

    Inventor： MINAMI MASAKAZU ,  INOUE MASANORI

    IPC: H01L21/205 ,  C23C16/448 ,  H01L21/304 ,  H01L21/31

    CPC classification number: G05D11/139 ,  C23C16/4482 ,  C30B25/14 ,  Y10T137/2499 ,  Y10T137/2509

    Abstract: PROBLEM TO BE SOLVED: To provide a material gas concentration controller capable of keeping the concentration of a material gas in a mixed gas constant even if the partial pressure of the material gas is varied, having high responsiveness and capable of controlling a concentration by being easily attached to a bubbling system.
    SOLUTION: The material gas concentration controller is used for a material gasifying system 1 including a tank 13 for housing a material L, a lead-in pipe 11 for leading a carrier gas for gasifying the housed material into the tank, and a lead-out pipe 12 for leading the mixed gas of the material gas in which the material gas is gasified and the carrier gas from the tank 13. The controller includes a base B connected to the lead-out pipe 12 and having an internal flow path B1 for making the mixed gas flow, a concentration measurement section CS for measuring the concentration of the material gas in the mixed gas flowing through the internal flow path B1, and a first valve 23 provided in the downstream from the concentration measurement section CS in the internal flow path B1 and adjusting the measurement concentration measured by the concentration measurement section CS. The concentration measurement section CS and the first valve 23 are attached to the base B.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种能够使材料气体在混合气体中的浓度保持恒定的材料气体浓度控制器，即使材料气体的分压变化，具有高响应性并且能够控制浓度 通过容易地附着在起泡系统上。 解决方案：材料气体浓度控制器用于包括用于容纳材料L的罐13的材料气化系统1，用于引导载气以将容纳气体气化到罐中的导入管11和 引出管12，用于引导材料气体气化的材料气体和来自罐13的载气的混合气体。控制器包括连接到引出管12并具有内部流路 B1，用于测量流过内部流路B1的混合气体中的原料气体的浓度的浓度测定部CS和设置在浓度测定部CS的下游的第一阀23， 内部流路B1，并调整由浓度测定部CS测定的测定浓度。 集中测量部分CS和第一阀23附接到基座B.版权所有（C）2010，JPO＆INPIT

    Substrate processing apparatus
    67.
    发明专利
    Substrate processing apparatus 有权
    基板加工设备

    公开(公告)号：JP2010067788A

    公开(公告)日：2010-03-25

    申请号：JP2008232618

    申请日：2008-09-10

    Applicant: Hitachi Kokusai Electric Inc ,  株式会社日立国際電気

    Inventor： MARUBAYASHI TETSUYA ,  MORIYA ATSUSHI

    IPC: H01L21/205 ,  C23C16/44

    CPC classification number: C23C16/24 ,  C23C16/30 ,  C23C16/4412 ,  C30B25/14 ,  C30B29/06

    Abstract: PROBLEM TO BE SOLVED: To prevent back diffusion of a processing gas, which is discharged from a bypass pipe to a gas exhaust system, into a processing chamber without the need of providing a dedicated vacuum pump on the downstream side of the bypass pipe.
    SOLUTION: A substrate processing apparatus includes: the processing chamber in which a substrate is placed; a gas supply system that supplies the processing gas for processing the substrate from a processing gas source into the processing chamber; the gas exhaust system that discharges the atmosphere in the processing chamber; at least two vacuum pumps provided in series with the gas exhaust system; and the bypass pipe that connects the gas supply system and the gas exhaust system by bypassing the processing chamber. Among the at least two vacuum pumps, a vacuum pump located on the most upstream side of the gas flowing through the gas exhaust system is a mechanical booster pump. The bypass pipe is connected at a location between the mechanical booster pump and a vacuum pump located downstream of the mechanical booster pump.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：为了防止从旁通管排放到排气系统的处理气体的反向扩散进入处理室，而不需要在旁路的下游侧设置专用的真空泵 管。 解决方案：基板处理装置包括：处理室，其中放置基板; 气体供给系统，其将处理所述基板的处理气体从处理气体源供给到所述处理室; 排气处理室内的气体排气系统; 至少两个与排气系统串联设置的真空泵; 以及通过绕过处理室连接气体供应系统和排气系统的旁通管。 在至少两个真空泵中，位于流过排气系统的气体的最上游侧的真空泵是机械增压泵。 旁通管连接在机械增压泵和位于机械增压泵下游的真空泵之间的位置。 版权所有（C）2010，JPO＆INPIT

    Vapor phase growth apparatus, and vapor phase growth method of thin film
    69.
    发明专利
    Vapor phase growth apparatus, and vapor phase growth method of thin film 有权
    蒸汽相生长装置和薄膜的蒸发相生长方法

    公开(公告)号：JP2009277723A

    公开(公告)日：2009-11-26

    申请号：JP2008125106

    申请日：2008-05-12

    Applicant: Shin Etsu Handotai Co Ltd ,  信越半導体株式会社

    Inventor： YAMADA TORU

    IPC: H01L21/205 ,  C23C16/52

    CPC classification number: C23C16/45523 ,  C23C16/24 ,  C23C16/45561 ,  C23C16/52 ,  C30B25/14 ,  C30B25/165 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262

    Abstract: PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus and a vapor phase growth method, for thin films such that a thin film continuously varying in impurity concentration along the thickness and a thin film greatly varying in impurity concentration along the thickness are easily formed by vapor phase growth.
    SOLUTION: A resistivity distribution of a thin film along the thickness is controlled by introducing a material gas, obtained by a dilute impurity gas obtained by mixing at least an impurity gas and a dilute gas after controlling flow rates thereof by a first flow rate adjusting mechanism 12 and a second flow rate adjusting mechanism 14 respectively with a main gas having its flow rate controlled by a third flow rate adjusting mechanism 16 and then by a fourth flow rate adjusting mechanism 18, into a reaction chamber 22, and carrying out vapor phase growth while supplying the material gas to the reaction chamber 22 while continuously varying the flow rates of the gases flowing through the first, second, and third flow rate adjusting mechanisms simultaneously and continuously under arithmetic control so that the thin film has a desired resistivity profile along the thickness.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：为了提供气相生长装置和气相生长方法，对于薄膜，使得沿厚度的杂质浓度连续变化的薄膜和沿着厚度的杂质浓度大大变化的薄膜 通过气相生长容易地形成。 解决方案：通过将通过混合至少杂质气体和稀释气体获得的稀释杂质气体的材料气体引入到通过第一流量控制其流量之后，控制薄膜沿着厚度的电阻率分布 速度调节机构12和第二流量调节机构14，其中主气体的流量由第三流量调节机构16控制，然后由第四流量调节机构18控制到反应室22中，并执行 气相生长，同时将材料气体供应到反应室22，同时在运算控制下同时且连续地改变流过第一，第二和第三流量调节机构的气体的流速，使得薄膜具有期望的电阻率 轮廓沿厚度。 版权所有（C）2010，JPO＆INPIT

    Organometallic-compound feeder
    70.
    发明专利
    Organometallic-compound feeder 有权
    有机复合饲料

    公开(公告)号：JP2009267388A

    公开(公告)日：2009-11-12

    申请号：JP2009078933

    申请日：2009-03-27

    Applicant: Sumitomo Chemical Co Ltd ,  住友化学株式会社

    Inventor： ABE HISAMITSU

    IPC: H01L21/205 ,  C23C16/448

    CPC classification number: C23C16/4481 ,  C30B25/14

    Abstract: PROBLEM TO BE SOLVED: To provide an organometallic-compound feeder capable of supplying an organometallic compound which is solid at ordinary temperature, with a stable concentration to raise a use rate of the packed organometallic compound.
    SOLUTION: The organometallic-compound feeder includes: a holding plate (9) which has been disposed in a lower part of a container (1) and holds an organometallic compound (8) deposited on an inert support and permits carrier gas to pass therethrough; a carrier gas inlet (4) disposed in an upper part of the container; a carrier gas outlet (5) which is open in an area located in a bottom part of the container and under the holding plate; and a baffle (10) which has been attached between the holding plate (9) and the carrier gas outlet (5) and is larger than the aperture of the carrier gas outlet (5). The feeder is configured so that the carrier gas passes downward from above through the organometallic compound packed on the holding plate and deposited on the inert support.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 待解决的问题：提供一种能够提供在常温下为固体的有机金属化合物的有机金属化合物进料器，以稳定的浓度提高包装的有机金属化合物的使用速率。 有机金属化合物供给器包括：保持板（9），其设置在容器（1）的下部，并保持沉积在惰性载体上的有机金属化合物（8），并允许载气 通过; 设置在容器的上部的载气入口（4） 载体气体出口（5），其位于容器的底部的位于所述保持板下方的区域中; 以及已经安装在保持板（9）和载气出口（5）之间并且大于载气出口（5）的孔的挡板（10）。 进料器被配置成使得载气从上方经过填充在保持板上的有机金属化合物向下通过并沉积在惰性载体上。 版权所有（C）2010，JPO＆INPIT

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