公开(公告)号：JP3384663B2

公开(公告)日：2003-03-10

申请号：JP29111195

申请日：1995-11-09

Applicant: 株式会社日立サイエンスシステムズ ,  株式会社日立製作所

Inventor： 武夫 上野 ,  紀恵 矢口

IPC: G01N1/28 ,  C23F4/00 ,  G01N1/32 ,  H01J37/244 ,  H01J37/30

公开(公告)号：JP3488075B2

公开(公告)日：2004-01-19

申请号：JP2600998

申请日：1998-02-06

Applicant: 株式会社日立サイエンスシステムズ ,  株式会社日立製作所

Inventor： 武夫 上野 ,  英巳 小池 ,  紀恵 矢口

IPC: G01N23/04 ,  G01N1/28 ,  G01N23/225 ,  H01J37/28 ,  H01J37/305

Abstract: PROBLEM TO BE SOLVED: To provide a thin film sample preparing method and its system which are suitable for preparing, with high processing accuracy, a chin film sample to be observed by an electron microscope. SOLUTION: In an electron microscope constituting an electron beam device 1, a stereoscopic image based on secondary electrons or the like is displayed on a scanned image observation device 5, the distance from the surface of a sample to an inside objective position thereof is measured by an image processing device 7, and the measured distance is memorized in a CPU 6. The memorized value is input to a CPU 8 through a communications line and is memorized therein. The sample is set on a convergent ion beam device 2 and the detection and correction of the position of the sample is performed by displaying its secondary electron image by the aid of converged ion beam irradiation and thereafter, the sample is processed by using a converged ion beam based on the memorized value in the CPU 8. The processing is carried out from both sides of the sample separately, and thereby, a thin film sample located at the objective position is prepared.

公开(公告)号：JP3663056B2

公开(公告)日：2005-06-22

申请号：JP20755698

申请日：1998-07-23

Applicant: 株式会社日立サイエンスシステムズ ,  株式会社日立製作所

Inventor： 武夫 上野 ,  正弘 富田 ,  貴志夫 日高 ,  紀恵 矢口

IPC: G01N23/225 ,  G01N1/28 ,  H01J37/20

CPC classification number: H01J37/20 ,  H01J2237/2001

Abstract: High resolution observation of a sample at a high temperature above 1000° C. is accomplished by suppressing sample drift by heating over a short time and with small electric current. A heater envelope made of a ceramic having a carbon coating on the surface is attached around a heater surrounding the sample. The heater envelope is rotatable around pivot screws, and has an outer frame portion of a holder individually having slots capable of letting an FIB enter so that the sample mounting on the holder, as it is, may be milled with the FIB.

公开(公告)号：JP4534235B2

公开(公告)日：2010-09-01

申请号：JP2007190890

申请日：2007-07-23

Applicant: 株式会社日立ハイテクノロジーズ ,  株式会社日立製作所

Inventor： 武夫 上野 ,  英巳 小池 ,  紀恵 矢口

IPC: G01N23/04

Abstract: PROBLEM TO BE SOLVED: To observe the phenomenon generated within a device by directly applying voltage at a specific position within an LSI with design dimensions of about 0.1 μm. SOLUTION: This method comprises, in addition to a process for processing arbitrary area of an object sample into a fine sample piece by using charged particle beam and extracting the sample piece, a process for attaching fine conductors 30a and 30b to the extracted fine sample piece 72, and a process for applying voltage to the attached fine conductors. COPYRIGHT: (C)2008,JPO&INPIT

公开(公告)号：JP4129088B2

公开(公告)日：2008-07-30

申请号：JP29343898

申请日：1998-10-15

Applicant: 株式会社日立ハイテクサイエンスシステムズ ,  株式会社日立製作所

Inventor： 武夫 上野 ,  充 今野 ,  隆仁 橋本 ,  紀恵 矢口 ,  成人 砂子沢

IPC: H01J37/22 ,  H01J37/28 ,  H01J37/141

公开(公告)号：JP3804757B2

公开(公告)日：2006-08-02

申请号：JP2000269237

申请日：2000-09-05

Applicant: 株式会社日立ハイテクサイエンスシステムズ ,  株式会社日立製作所

Inventor： 武夫 上野 ,  隆仁 橋本 ,  紀恵 矢口

IPC: G01N23/04 ,  H01J37/252 ,  G01N23/225 ,  H01J37/22 ,  H01J37/28

Abstract: PROBLEM TO BE SOLVED: To make an EDX(energy dispersive X-ray) analysis of a light element with high accuracy. SOLUTION: An SEM(scanning electron microscope) image and a dark-field STEM(scanning-transmission electron microscope) image are simultaneously displayed on an electron beam device mounted with an EDX analyzer, and the amount of signal at each pixel of the SEM image is compared with that of the STEM image. When the difference in the amount of signal is not large, an object of analysis is determined to exist on a surface of a sample and an EDX analysis is made thereof.

公开(公告)号：JP4012705B2

公开(公告)日：2007-11-21

申请号：JP2001223167

申请日：2001-07-24

Applicant: 株式会社日立ハイテクサイエンスシステムズ ,  株式会社日立製作所

Inventor： 武夫 上野 ,  英巳 小池 ,  紀恵 矢口

IPC: G01N23/04 ,  G01N1/28 ,  G01R31/28 ,  G01R31/302 ,  H01J37/20

Abstract: PROBLEM TO BE SOLVED: To observe a phenomenon that is generated in a device by directly applying a voltage to a specific section inside an LSI whose design dimensions are approximately 0.1 μm. SOLUTION: A process for mounting fine conductors 30a and 30b to an extracted fine sample piece 72, and a process for applying a voltage to the mounted fine conductors are added to a process for machining and extracting an arbitrary region in a target sample into fine sample pieces using charge particle beams.

公开(公告)号：JP3106846U

公开(公告)日：2005-01-27

申请号：JP2004004465

申请日：2004-07-28

Applicant: 株式会社日立サイエンスシステムズ ,  株式会社日立ハイテクノロジーズ

Inventor： 武夫 上野 ,  充 今野 ,  毅 大西 ,  紀恵 矢口 ,  靖 黒田

IPC: H01J37/20 ,  H01J37/28 ,  H01J37/317

Abstract: 【課題】
集束イオンビーム加工法での加工ムラおよびリデポジションの問題を解決し、微細構造解析や元素分析などの分析精度を向上する。
【解決手段】
試料を固定した試料台をホールダ軸の周りに３６０°回転する機能を備えた荷電粒子線装置用試料ホールダにおいて、前記試料台の先端部を集束イオンビームの進行方向に対し直角に回転補正した試料にイオンビーム照射することで達成される。
また、試料台軸の周りに３６０°回転できる機能を備えた前記荷電粒子線装置用試料ホールダにおいて、前記試料ホールダの試料台の先端部を集束イオンビームの進行方向に対し直角に回転補正を加えた後、試料台に固定した試料にイオンビーム照射することで達成される。
【選択図】図５