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公开(公告)号：JP4337832B2
公开(公告)日：2009-09-30
申请号：JP2006058855
申请日：2006-03-06
Applicant: 株式会社日立製作所
Abstract: PROBLEM TO BE SOLVED: To provide an apparatus, a technique, and a method for two-dimensional distributions and measuring distortions and stress, having nanometer resolution of each type of crystal sample through the use of diffraction images observed by an electronic microscope. SOLUTION: Electron beams are irradiated in minute amount and in parallel to a sample. The distances, between the spots of a diffraction image reflecting a crystal structure acquired by the irradiation, are measured by an image detector or a position detector. A two-dimensional stress distribution is superimposed on the measured positional information and displayed on an enlarged image of an electronic microscope. Distortions and stresses in minute crystals can be displayed at a high resolution and at a high speed in matching structural information of the sample. COPYRIGHT: (C)2006,JPO&NCIPI
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公开(公告)号：JPWO2002068944A1
公开(公告)日：2004-06-24
申请号：JP2002567814
申请日：2001-02-28
Applicant: 株式会社日立製作所
CPC classification number: H01J37/28 , G01L1/241 , G01L5/0047 , G01N23/20 , G01N23/20058 , G01N23/2251 , H01J37/2955 , H01J2237/24585 , H01J2237/2544 , H01J2237/2813 , H01L22/12 , H01L2924/0002 , H01L2924/00
Abstract: 高分解能で、かつ高感度に、計測位置整合性の高い応力・歪の二次元的な分布の実時間計測を可能にする微小領域物性計測方法及び装置である。細く絞った電子線(23,26)を走査しながら試料に照射し、回折スポット(32,33)の位置の変位を二次元位置有感形電子検出器(13)で計測する。変位量は電圧値として出力されるので、ナノディフラクション法の原理に従って応力・歪の大きさに変換し、試料上の位置信号と同期して画像表示する。
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公开(公告)号：JP4548537B2
公开(公告)日：2010-09-22
申请号：JP2008269292
申请日：2008-10-20
Applicant: 株式会社日立製作所
IPC: G01N23/225 , H01J37/28
Abstract: PROBLEM TO BE SOLVED: To provide an inspection method and device using electron beam in which inspection can be made at a higher speed. SOLUTION: Electron beam generated by an electron beam source is focused on a test piece by an object lens, and the test piece is scanned by the electron beam, and the electron bean is deflected so that a charged particle can be generated from the test piece, and the test piece is moved continuously while scanning and a focusing distance of the object lens is rectified by measuring a height of the test piece while the test piece is moving, and the charged particle generated from the test piece is detected from between the object lens and the test piece by a charged particle detecting unit and is converted into an electric signal, and the electric signal is memorized as an image signal and an image comparison is conducted by using the memorized image signal and a test piece defect is detected. COPYRIGHT: (C)2009,JPO&INPIT
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Patent Agency Ranking
公开(公告)号：JP3564958B2
公开(公告)日：2004-09-15
申请号：JP21290897
申请日：1997-08-07
Applicant: 株式会社日立製作所
Inventor： 敦子 ▲高▼藤 , 貢 佐藤 , 博之 品田 , 康継 宇佐美 , 裕子 岩淵 , 幹雄 市橋 , 秀男 戸所 , 勝也 杉山 , 弘義 森 , 悟 福原 , 博 遠山 , 豊 金子
IPC: G01Q30/02 , G01N23/00 , G01N23/20 , G01N23/225 , G21K1/08 , G21K7/00 , H01J37/22 , H01J37/244 , H01J37/256 , H01J37/28 , H01L21/66
CPC classification number: H01J37/28 , G01N23/20 , G01N23/2251 , G03F7/7065 , G06T7/001 , G06T2207/10056 , G06T2207/30148 , H01J37/04 , H01J37/20 , H01J37/265 , H01J2237/04756 , H01J2237/20221 , H01J2237/2444 , H01J2237/24592 , H01J2237/2817 , H01J2237/31766
Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
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公开(公告)号：JP4853581B2
公开(公告)日：2012-01-11
申请号：JP2010179920
申请日：2010-08-11
Applicant: 株式会社日立製作所
IPC: G01N23/225 , H01J37/244 , H01J37/28 , H01L21/66
Abstract: PROBLEM TO BE SOLVED: To provide an inspection method and device, capable of performing the inspection at a higher speed, using an electron beam. SOLUTION: An electron beam 36 from an electron gun 1 is converged by an objective lens 9 and decelerated by a retarding voltage impressed to a sample 13; the sample 13 is scanned by the electron beam, while being moved; secondary electrons 33 generated from the sample 13 are accelerated by the retarding voltage to make a nearly parallel beam which is deflected by an E×B deflector 18, arranged between the objective lens 9 and the sample 13 and has a secondary electron generating body 19 irradiated; and second secondary electrons 20 are generated from the secondary electron generating body 19, and second detected by a charged particle detector 21. The output signal detected is stored as an image signal, and the image stored is compared in an operation section 29 and a defect determining section 30 to thereby determine defects. COPYRIGHT: (C)2011,JPO&INPIT
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公开(公告)号：JP4702472B2
公开(公告)日：2011-06-15
申请号：JP2009174889
申请日：2009-07-28
Applicant: 株式会社日立製作所
IPC: G01N23/225 , H01J37/147 , H01J37/244 , H01J37/28 , H01J37/29 , H01L21/66
Abstract: PROBLEM TO BE SOLVED: To provide: an inspection method using an electron beam and capable of increasing the speed of inspection; and an inspection device. SOLUTION: An electron beam 36 from an electron gun 1 is converged by an objective lens 9, and decelerated by a retarding voltage applied to a sample 13; the sample 13 is scanned by the electron beam while moving; secondary electrons 33 generated from the sample 13 are accelerated by the retarding voltage, formed into a nearly parallel beam, deflected by an E×B deflector 18 arranged between the objective lens 9 and the sample 13 to irradiate a secondary electron generator 19; and second secondary electrons 20 are generated from the secondary electron generator 19 and detected by a charged particle detector 21. An output signal generated by the detection thereof is stored as an image signal, the stored image is compared in a calculation part 29 and a defect determination part 30, and a defect is determined. COPYRIGHT: (C)2010,JPO&INPIT
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公开(公告)号：JP4400614B2
公开(公告)日：2010-01-20
申请号：JP2006306116
申请日：2006-11-13
Applicant: 株式会社日立製作所
IPC: G01N23/225 , H01J37/28 , H01L21/66
Abstract: PROBLEM TO BE SOLVED: To provide an inspection method and an inspection device using an electron beam which increases speed of an inspection. SOLUTION: An electron beam generated at an electron source is converged to a sample by an objective lens, the sample is scanned by the electron beam, the electron beam is deflected to generated charged particles from the sample by above, and continuously displaced between the sample during the scanning, a height of the sample is measured during displacing and a focused distance of the objective lens is corrected, charged particles generated from the sample are detected by a charged particle detector between the objective lens and the sample and translated into an electrical signal, the electrical signal is memorized as an image signal, an image comparison is proceeded by using the memorized image signal, and then an error of the sample is detected. COPYRIGHT: (C)2007,JPO&INPIT
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公开(公告)号：JP4062196B2
公开(公告)日：2008-03-19
申请号：JP2003202164
申请日：2003-07-28
Applicant: 株式会社日立製作所
Inventor： 敦子 ▲高▼藤 , 貢 佐藤 , 博之 品田 , 康継 宇佐美 , 裕子 岩淵 , 幹雄 市橋 , 秀男 戸所 , 勝也 杉山 , 弘義 森 , 悟 福原 , 博 遠山 , 豊 金子
IPC: G01N23/225 , H01L21/66 , G01R31/302
Abstract: PROBLEM TO BE SOLVED: To provide an inspection method using electron beam which can speed up the inspection and an inspection device. SOLUTION: An electron beam 36 from an electron gun 1 is converged by an objective lens 9 and decelerated by the retarding voltage impressed to a sample 13. The sample 13 is scanned by the electron beam while moving, and the secondary electron 33 generated from the sample 13 is accelerated by the retarding voltage and becomes almost parallel beam. Then the beam is deflected by an E×B deflector 18 which is located between the objective lens 9 and the sample 13, and it irradiates a secondary electron generating body 19. A second secondary electron 20 generates from the secondary electron generating body 19, and is detected by a charged particle detector 21. The detected output signal is stored as a picture signal, and the stored picture is compared at an operation part 29 and a defect determining part 30 to determine the defect. COPYRIGHT: (C)2004,JPO
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