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1.发明专利Method for producing boride film and method for producing electron emitting device 审中-公开制造硼膜的方法和用于生产电子发射装置的方法
公开(公告)号：JP2010174331A
公开(公告)日：2010-08-12
申请号：JP2009018344
申请日：2009-01-29
Inventor： AOKI NAOFUMI , MIZUNO TOMOYASU , KOBAYASHI TAMAKI , MIYAMOTO YUSUKE
CPC classification number: C23C14/225 , C23C14/067 , C23C14/35 , C23C14/54
Abstract: PROBLEM TO BE SOLVED: To provide technology for improving variations in film quality in a sputtering method and producing a boride film with good crystallinity, to provide technology for forming a boride film having homogeneous film quality (crystallinity) on a substrate having a large area, to provide a method for producing an electron emitting device excellent in electron emission characteristics (particularly, in stability of the electron emission), and further, to improve reduction of the film forming energy due to disposition of a shielding member, by employing a simple configuration. SOLUTION: A boride film is deposited on a substrate by a sputtering process through an opening of a shield member, while the substrate, a boride target and the shielding member having the opening are disposed in such a manner that the substrate and the target oppose to each other and that the shield member is placed between the substrate and the target. The shield member is arranged so as to shield between an erosion region of the target and the substrate. A distribution of plasma density in a space between the substrate and the target is set in such a manner that a plasma density in a region in which the opening is located becomes higher than a plasma density in a region shielded by the shield member. COPYRIGHT: (C)2010,JPO&INPIT
Abstract translation: 要解决的问题：为了提供一种用于改善溅射方法中的膜质量变化并产生具有良好结晶度的硼化物膜的技术，以提供在具有均匀的膜质量（结晶度）的基板上形成具有均匀膜质量（结晶度）的硼化膜的技术， 提供一种制造电子发射特性优异（特别是电子发射稳定性）的电子发射装置的方法，此外，通过采用由于配置屏蔽部件而导致的成膜能量的降低， 一个简单的配置。 解决方案：通过溅射工艺通过屏蔽构件的开口将硼化物膜沉积在衬底上，同时衬底，硼化物靶和具有开口的屏蔽构件以这样的方式设置，使得衬底和 目标彼此相对，并且屏蔽构件被放置在基板和目标之间。 屏蔽构件被布置成屏蔽目标的侵蚀区域和基板之间。 在基板和靶之间的空间中的等离子体密度的分布被设定为使得开口位于的区域中的等离子体密度高于屏蔽部件屏蔽的区域中的等离子体密度。 版权所有（C）2010，JPO＆INPIT
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公开(公告)号：JP2014032954A
公开(公告)日：2014-02-20
申请号：JP2013123212
申请日：2013-06-11
Inventor： MURAYAMA YOHEI , AOKI NAOFUMI , KYOGAKU MASABUMI , IWASAKI KOTA
CPC classification number: H01J37/261 , H01J49/0004 , H01J49/0468 , H01J49/142 , H01J2237/08 , H01J2237/2448 , H01J2237/2602
Abstract: PROBLEM TO BE SOLVED: To provide a mass spectroscope device with raised controllability of an addition amount of water molecules which can reduce device contamination and avoid enlarging and complicating the device, and moreover, to provide a mass spectroscope device using an irradiation device which can emit both primary ions and particles for water molecule addition.SOLUTION: A mass spectroscope device, which irradiates a sample with primary ions to perform mass spectrometry of secondary ions emitted from the sample, includes a chamber for placing the sample, irradiation means for irradiating the sample with particles, and an extraction electrode for guiding the secondary ions emitted from the sample to mass spectrometry means. The irradiation means is means for switching between a first mode of radiating the primary ions for emitting the secondary ions from the sample and a second mode of emitting particles containing water molecules to be adhered to the sample, thereby irradiating the sample with the particles.
Abstract translation: 要解决的问题：为了提供具有可以减少装置污染并避免装置的扩大和复杂化的水分子的添加量的可控性提高的质谱仪，而且提供使用能够发射的照射装置的质谱仪装置 主要离子和水分子添加颗粒。解决方案：用一次离子照射样品进行从样品发射的二次离子的质谱分析的质谱仪，包括用于放置样品的室，用于照射样品的照射装置 和用于将从样品发射的二次离子引导到质谱装置的引出电极。 照射装置是用于在从样品辐射初级离子以发射次级离子的第一模式和第二模式之间切换的第二模式，该第二模式包含要附着到样品上的含有水分子的颗粒，从而用该颗粒照射样品。
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3.发明专利Method of manufacturing electron emitting element, and method of manufacturing lanthanum boride film 审中-公开制造电子发射元件的方法和制造硼硅膜的方法
公开(公告)号：JP2010177029A
公开(公告)日：2010-08-12
申请号：JP2009018202
申请日：2009-01-29
Inventor： AOKI NAOFUMI , KOBAYASHI TAMAKI
IPC: H01J9/02
Abstract: PROBLEM TO BE SOLVED: To manufacture a lanthanum boride film having good crystallinity by improving variation of film quality in a sputtering method, to form a lanthanum boride film having uniform film quality (crystallinity) on a substrate having a large area, and to provide a method of manufacturing an electron emitting element excellent in electron emitting characteristics (stability of electron emission in particular). SOLUTION: In a process to deposit the lanthanum boride film on the substrate by means of the sputtering method while relatively moving the substrate and a target of lanthanum boride with the substrate and the target of lanthanum boride disposed face to face, when the mean free path of sputtering gas molecules during deposition is λ(mm), and a distance between the substrate and the target is L(mm), L/λ is set to be not less than 20, and a value obtained by dividing a discharge power value by the area of the target is set to be 1-5 W/cm 2 . COPYRIGHT: (C)2010,JPO&INPIT
Abstract translation: 待解决的问题：为了通过改善溅射方法中的膜质量的变化来制造具有良好结晶度的硼酸镧膜，以在具有大面积的基板上形成具有均匀膜质量（结晶度）的硼化镧膜，以及 提供一种制造电子发射特性（特别是电子发射的稳定性）优异的电子发射元件的方法。 解决方案：在通过溅射法在衬底上沉积硼硅酸镧膜的方法中，同时相对移动衬底和硼化镧靶与基底和硼化镧靶相对设置，当 沉积期间溅射气体分子的平均自由程为λ（mm），基板与目标之间的距离为L（mm），L /λ设定为不小于20，通过将放电 按目标区域的功率值设置为1-5W / cm
2 。 版权所有（C）2010，JPO＆INPIT -
公开(公告)号：JP2015028919A
公开(公告)日：2015-02-12
申请号：JP2014129168
申请日：2014-06-24
Inventor： MURAYAMA YOHEI , KYOGAKU MASABUMI , IWASAKI KOTA , AOKI NAOFUMI
IPC: H01J49/14 , G01N27/62 , G01N27/64 , H01J37/252 , H01J49/40
CPC classification number: H01J49/142 , G01N23/2258
Abstract: 【課題】二次イオン質量スペクトルにおけるピークの識別を容易にするための、イオン群照射装置を提供する。【解決手段】イオン群を試料に照射するイオン群照射装置であって、イオンを発生させるイオン源と、該イオン源から放出されたイオンから、イオン群を構成するイオンの平均質量が異なる、2個以上のイオン群を選別するイオン群選別手段と、該2個以上のイオン群を試料に照射する一次イオン照射手段と、を有し、さらに、該2個以上のイオン群を構成するイオンの原子種または分子種が、イオン群間で共通する、ことを特徴とするイオン群照射装置を提供する。【選択図】図1
Abstract translation: 要解决的问题：提供一种用于促进二次离子质谱中的峰的鉴定的离子组辐照器。解决方案：用离子基团照射样品的离子组照射装置包括用于产生离子的离子源，离子群选择 用于从离子源发射的离子中选择多于一个具有不同的构成离子基团的平均离子质量的离子基团的装置和用于照射具有多于一个离子基团的样品的一次离子照射装置。 此外，离子组中常见的是构成多于一个离子基团的离子的原子种类或分子种类。
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公开(公告)号：JP2012159493A
公开(公告)日：2012-08-23
申请号：JP2011251621
申请日：2011-11-17
Inventor： AOKI NAOFUMI , KOMATSU MANABU , KYOGAKU MASABUMI , HASHIMOTO HIROYUKI
IPC: G01N27/62
CPC classification number: G01N23/2202 , H01J49/0468 , H01J49/142
Abstract: PROBLEM TO BE SOLVED: To provide a sample analysis method and a sample analysis device capable of sensitively detecting a sample while keeping original distribution information on a composition of the sample.SOLUTION: A sample analysis method, which irradiates a sample with a primary ion beam and analyzes a secondary ion released from the sample by a mass spectrometry, has the processes: to cool the sample placed inside a chamber; to discharge water or solution into the chamber to form an ice layer on a surface of the cooled sample; and to irradiate the surface of the sample with the primary ion beam in a state that the ice layer is formed on the surface. In the sample analysis method, a quantity of the water used to form the ice layer is equal to or larger than 0.1 ng/mmand equal to or less than 20 ng/mm.
Abstract translation: 要解决的问题：提供能够灵敏地检测样品的样品分析方法和样品分析装置，同时保持关于样品的组成的原始分布信息。 解决方案：用一次离子束照射样品并通过质谱分析从样品释放的二次离子的样品分析方法具有以下过程：冷却放置在室内的样品; 将水或溶液排放到室中以在冷却样品的表面上形成冰层; 并且在表面上形成冰层的状态下用初级离子束照射样品的表面。 在样品分析方法中，用于形成冰层的水的量等于或大于0.1ng / mm 2，并且等于或小于20ng / mm
2 。 版权所有（C）2012，JPO＆INPIT -
Patent Agency Ranking
公开(公告)号：JP2012009179A
公开(公告)日：2012-01-12
申请号：JP2010141942
申请日：2010-06-22
Inventor： MURAKAMI YOICHI , AOKI NAOFUMI
IPC: H01J9/02
CPC classification number: C23C14/067 , C23C14/34 , C23C14/3414
Abstract: PROBLEM TO BE SOLVED: To manufacture a lanthanum boride film having a low work function by a sputtering method with good reproducibility and high uniformity.SOLUTION: The method of manufacturing the lanthanum boride film includes a step of forming the lanthanum boride film on a substrate by the sputtering method in a state in which a target of lanthanum boride whose oxygen content is 0.4 mass% or more and 1.2 mass% or less and the substrate are arranged opposite to each other. L/λ is set to be 20 or more and the value obtained by dividing discharge electric power by the target area is set to be 1 W/cmor more and 5 W/cmor less, where λ is a mean free path (mm) of sputter gas molecules in the film formation and L is a distance (mm) between the substrate and the target.
Abstract translation: 要解决的问题：通过溅射法制造具有低功函数的硼酸镧膜，具有良好的再现性和高均匀性。 解决方案：制造硼化镧膜的方法包括在氧化物含量为0.4质量％以上且1.2以下的硼化镧靶的状态下，通过溅射法在基板上形成硼化镧膜的工序 质量％以下，基板彼此相对配置。 将L /λ设定为20以上，将放电电力除以目标区域而得到的值设定为1W / cm 2以上且5W / cm
2 以下，其中λ是膜形成中溅射气体分子的平均自由程（mm），L是基板和靶之间的距离（mm）。 版权所有（C）2012，JPO＆INPIT -
公开(公告)号：JP2015028921A
公开(公告)日：2015-02-12
申请号：JP2014129247
申请日：2014-06-24
Inventor： MURAYAMA YOHEI , KYOGAKU MASABUMI , IWASAKI KOTA , AOKI NAOFUMI
CPC classification number: H01J49/142 , G01N23/2258 , G01N2223/0816 , G01N2223/506
Abstract: 【課題】二次イオン質量スペクトルにおけるピークの識別と、それによる試料分子の特定とをスループットよく行うための、イオン群照射装置を提供する。【解決手段】イオン源より放出されたイオンから、イオン群を構成するイオンの平均質量が異なる2個以上のイオン群を選別するイオン群選別手段と、該イオン群選別手段で選別された2個以上のイオン群を試料に照射する一次イオン照射手段と、を有し、さらに、イオン群選別手段は、1個以上のイオン群を選別し、該選別されたイオン群1個から、更に前記2個以上のイオン群を選別することを特徴とするイオン群照射装置を提供する。【選択図】図1
Abstract translation: 要解决的问题：提供一种离子组照射装置，用于进行二次离子质谱中的峰的鉴定，以及通过具有良好生产能力的峰识别来确定样品分子的规格。解决方案：离子组照射装置包括离子组选择装置 用于从离子源发射的离子中选择多于一个具有不同的构成离子基团的平均离子质量的离子基团，以及用于用多于一个离子基团选择的离子基团照射样品的一次离子照射装置 手段。 此外，离子组选择单元选择多于一个的离子基团，并且从如此选择的一个离子组中进一步选择多于一个的离子基团。
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8.发明专利Electron emitting element and display panel using the electron emitting element 审中-公开电子发射元件和使用电子发射元件的显示面板
公开(公告)号：JP2010157490A
公开(公告)日：2010-07-15
申请号：JP2009233503
申请日：2009-10-07
Inventor： AOKI NAOFUMI , NISHIDA AKIYUKI
CPC classification number: H01J1/3044 , H01J1/304 , H01J1/3046 , H01J9/025 , H01J31/127 , H01J2201/30446 , H01J2201/30492 , H01J2201/30496 , H01J2329/0439 , H01J2329/0471 , H01J2329/0473
Abstract: PROBLEM TO BE SOLVED: To provide a stably operating electron emitting element. SOLUTION: The electron emitting element 10 includes at least a structure 3 constituted of a conductive member, and a lanthanum boride layer 5 formed on the structure 3. An oxide layer 4 is formed between the structure 3 and the lanthanum boride layer 5. COPYRIGHT: (C)2010,JPO&INPIT
Abstract translation: 要解决的问题：提供稳定操作的电子发射元件。 解决方案：电子发射元件10至少包括由导电构件和形成在结构3上的硼化镧层5构成的结构3.在结构3和硼化镧层5之间形成氧化物层4 。版权所有（C）2010，JPO＆INPIT
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9.发明专利Method of manufacturing electron emitting element, and method of manufacturing image display device 审中-公开制造电子发射元件的方法和制造图像显示装置的方法
公开(公告)号：JP2010157489A
公开(公告)日：2010-07-15
申请号：JP2009217330
申请日：2009-09-18
Inventor： AOKI NAOFUMI , NISHIDA AKIYUKI
CPC classification number: H01J9/025 , H01J1/304 , H01J1/3044 , H01J1/3046 , H01J31/127 , H01J2201/30423 , H01J2201/30426 , H01J2201/30446 , H01J2201/30492 , H01J2201/30496 , H01J2329/0423 , H01J2329/0439 , H01J2329/0471 , H01J2329/0473
Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of easily manufacturing an electron emitting element coated with a low work function material and having a favorable electron emitting characteristic to suppress a variation in electron emitting characteristic among the elements with high reproducibility. SOLUTION: In the method of manufacturing the electron emitting element, a metal oxide layer is formed on a surface of a structure before coating the underlying structure with the low work function material. COPYRIGHT: (C)2010,JPO&INPIT
Abstract translation: 要解决的问题：提供一种容易地制造涂覆有低功函数材料并具有良好的电子发射特性的电子发射元件的制造方法，以抑制重复性高的元件之间的电子发射特性的变化。 解决方案：在制造电子发射元件的方法中，在用低功函数材料涂覆下面的结构之前，在结构的表面上形成金属氧化物层。 版权所有（C）2010，JPO＆INPIT
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公开(公告)号：JP2013257282A
公开(公告)日：2013-12-26
申请号：JP2012134844
申请日：2012-06-14
Inventor： AOKI NAOFUMI
Abstract: PROBLEM TO BE SOLVED: To superimpose an optical microscopic image obtained from a slice sample on a mass distribution image, superimpose mass distribution images, or superimpose optical microscopic images, without causing distortion on the images, while preventing reduction in accuracy of superimposition.SOLUTION: Alignment markers to be detected from images are detected, displacement between marker pairs corresponding between the images are detected, and image distortion is corrected on the basis of the displacement, to align the images.
Abstract translation: 要解决的问题：为了将从切片样本获得的光学显微镜图像叠加在质量分布图像上，叠加质量分布图像或叠加光学显微镜图像，而不会对图像造成失真，同时防止叠加精度的降低。 检测到要从图像检测的对准标记，检测对应于图像的标记对之间的位移，并且基于位移来校正图像失真，以对准图像。
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