カソード形成方法
    3.
    发明专利

    公开(公告)号:JP2018113250A

    公开(公告)日:2018-07-19

    申请号:JP2017235482

    申请日:2017-12-07

    CPC classification number: C30B29/66 B05D3/048 C30B29/10 H01J1/148 H01J9/042

    Abstract: 【課題】カソードチップの形態学的完全性を高めることが可能なカソード製造方法を提供する。 【解決手段】円錐形状面を有する上側テーパ部と、平坦面切頂チップと、を備える、LaB 6 単結晶のエミッタ構造を形成し、前駆体LaB 6 カソードを得るために切頂チップの平坦面をカーボンコーティングが無い状態に保ちつつ少なくとも上側テーパ部の円錐面にカーボンコーティングを塗布し、前駆体LaB 6 カソードを1×10 −7 〜1×10 −8 Torrの真空下で1700K〜2000Kの温度まで初期加熱を行い、初期加熱が施された前駆体LaB 6 カソードを周囲温度まで冷却し、周囲温度の前駆体LaB 6 カソードを、水蒸気を含む大気に晒し、LaB 6 カソードを得るために1×10 −7 〜1×10 −8 Torrの真空下において1700K〜2000Kの放出温度で前駆体LaB 6 カソードの第2の加熱を行なうことを特徴とする。 【選択図】図1

    Hot-cathode, electronic discharge device, and manufacturing method for hot-cathode
    5.
    发明专利
    Hot-cathode, electronic discharge device, and manufacturing method for hot-cathode 有权
    热阴极,电子放电装置和热阴极的制造方法

    公开(公告)号:JP2014075336A

    公开(公告)日:2014-04-24

    申请号:JP2013172358

    申请日:2013-08-22

    Inventor: KATSAP VICTOR

    Abstract: PROBLEM TO BE SOLVED: To provide an electronic discharge hot-cathode with a prolonged product life.SOLUTION: A hot-cathode includes: a crystal emitter or a sinter emitter having an emitter upper part 20 and an emitter main part 30; and a carbon coating part having a lower side coating part 42 and an upper side coating part 41. The lower side coating part 42 is coated with a carbon material on the outer circumference of the emitter main body side surface. The upper side coating part 41, formed continuously from the lower side coating part, surrounds the emitter upper part with a clearance.

    Abstract translation: 要解决的问题:提供具有延长的产品寿命的电子放电热阴极。解决方案:热阴极包括:具有发射极上部20和发射极主体30的晶体发射器或烧结发射体; 以及具有下侧涂布部42和上侧涂布部41的碳涂布部。下侧涂布部42在发射体主体侧表面的外周上涂覆有碳材料。 从下侧涂覆部分连续形成的上侧涂覆部分41以间隙围绕发射器上部。

    Cathode and method for manufacturing cathode
    6.
    发明专利
    Cathode and method for manufacturing cathode 审中-公开
    阴极和制造阴极的方法

    公开(公告)号:JP2014102929A

    公开(公告)日:2014-06-05

    申请号:JP2012253120

    申请日:2012-11-19

    Inventor: KOBAYASHI YOSHIE

    Abstract: PROBLEM TO BE SOLVED: To provide a cathode capable of suppressing an electric field at a cathode tip from being formed ununiformly, and a method for manufacturing a cathode.SOLUTION: A cathode of the present embodiment includes: a body having an electron emission surface at the upper end thereof; and a coating layer covering the body while the electron emission surface is exposed and having a groove between the electron emission surface and the coating layer. The width of the groove is 1 μm or more and 10 μm or less, and the difference between the maximum and the minimum of the width of the groove around the electron emission surface is 1 μm or less.

    Abstract translation: 要解决的问题:提供能够抑制阴极尖端的电场不均匀形成的阴极及其制造方法。本实施方式的阴极包括:具有电子发射面的主体, 其上端; 以及在电子发射表面暴露并且在电子发射表面和涂层之间具有凹槽的同时覆盖主体的涂层。 槽的宽度为1μm以上且10μm以下,电子发射面周围的槽的宽度的最大值与最小值的差为1μm以下。

    Method of manufacturing electron emitting element, and method of manufacturing lanthanum boride film
    7.
    发明专利
    Method of manufacturing electron emitting element, and method of manufacturing lanthanum boride film 审中-公开
    制造电子发射元件的方法和制造硼硅膜的方法

    公开(公告)号:JP2010177029A

    公开(公告)日:2010-08-12

    申请号:JP2009018202

    申请日:2009-01-29

    Abstract: PROBLEM TO BE SOLVED: To manufacture a lanthanum boride film having good crystallinity by improving variation of film quality in a sputtering method, to form a lanthanum boride film having uniform film quality (crystallinity) on a substrate having a large area, and to provide a method of manufacturing an electron emitting element excellent in electron emitting characteristics (stability of electron emission in particular). SOLUTION: In a process to deposit the lanthanum boride film on the substrate by means of the sputtering method while relatively moving the substrate and a target of lanthanum boride with the substrate and the target of lanthanum boride disposed face to face, when the mean free path of sputtering gas molecules during deposition is λ(mm), and a distance between the substrate and the target is L(mm), L/λ is set to be not less than 20, and a value obtained by dividing a discharge power value by the area of the target is set to be 1-5 W/cm 2 . COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 待解决的问题:为了通过改善溅射方法中的膜质量的变化来制造具有良好结晶度的硼酸镧膜,以在具有大面积的基板上形成具有均匀膜质量(结晶度)的硼化镧膜,以及 提供一种制造电子发射特性(特别是电子发射的稳定性)优异的电子发射元件的方法。 解决方案:在通过溅射法在衬底上沉积硼硅酸镧膜的方法中,同时相对移动衬底和硼化镧靶与基底和硼化镧靶相对设置,当 沉积期间溅射气体分子的平均自由程为λ(mm),基板与目标之间的距离为L(mm),L /λ设定为不小于20,通过将放电 按目标区域的功率值设置为1-5W / cm 2 。 版权所有(C)2010,JPO&INPIT

    High-luminance thermionic cathode
    8.
    发明专利
    High-luminance thermionic cathode 审中-公开
    高亮度半导体CATHODE

    公开(公告)号:JP2005228741A

    公开(公告)日:2005-08-25

    申请号:JP2005018549

    申请日:2005-01-26

    Inventor: KATSAP VICTOR

    Abstract: PROBLEM TO BE SOLVED: To elongate life of and improve electrooptic performance of a thermionic cathode for a device using electron beams such as a lithography device, a scanning electron microscope (SEM), and a transmission electron microscope (TEM). SOLUTION: The thermionic cathode of an improved type is provided with a conical part with its outside face covered with a carbon film having a comparatively small conical angle of not more than 60°, and has large angular intensity and brightness of emitted electron beams and a long life. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题:为了延长使用诸如光刻装置,扫描电子显微镜(SEM)和透射电子显微镜(TEM)的电子束的装置的热离子阴极的寿命并提高电离性能。 解决方案:改进型的热离子阴极设置有圆锥形部分,其外表面覆盖有不大于60°的较小锥角的碳膜,并且具有大的角度强度和发射电子的亮度 梁和寿命长。 版权所有(C)2005,JPO&NCIPI

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