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    Semiconductor device
    1.
    发明专利
    Semiconductor device 有权
    半导体器件

    公开(公告)号：JP2014053629A

    公开(公告)日：2014-03-20

    申请号：JP2013216923

    申请日：2013-10-18

    Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

    Inventor： HONDA TATSUYA ,  TSUBUKI MASASHI ,  NONAKA YUSUKE ,  SHIMAZU TAKASHI ,  YAMAZAKI SHUNPEI

    IPC: H01L21/336 ,  H01L29/786 ,  H01L51/50 ,  H05B33/14

    CPC classification number: H01L29/78693 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/7869

    Abstract: PROBLEM TO BE SOLVED: To suppress decrease in on-state current in a semiconductor device using an oxide semiconductor film.SOLUTION: A transistor using an oxide semiconductor film comprises: a gate electrode; a gate insulating film covering the gate electrode and containing oxide containing silicon; the oxide semiconductor film provided in contact with the gate insulating film and in a region overlapping with at least the gate electrode; and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region with thickness less than or equal to 5 nm from an interface with the gate insulating film has silicon concentration lower than or equal to 1.0 atom%, and concentration of the silicon contained in a region other than the first region of the oxide semiconductor film is lower than the concentration of the silicon contained in the first region.

    Abstract translation: 要解决的问题：抑制使用氧化物半导体膜的半导体器件中的导通电流的降低。解决方案：使用氧化物半导体膜的晶体管包括：栅电极; 覆盖栅电极并含有含硅氧化物的栅极绝缘膜; 所述氧化物半导体膜设置成与所述栅极绝缘膜接触并且与至少所述栅电极重叠的区域中; 以及与氧化物半导体膜电连接的源电极和漏电极。 在氧化物半导体膜中，与栅极绝缘膜的界面的厚度小于或等于5nm的第一区域具有低于或等于1.0原子％的硅浓度，并且包含在除 氧化物半导体膜的第一区域低于第一区域中所含的硅的浓度。

    Oxide semiconductor film
    2.
    发明专利
    Oxide semiconductor film 有权
    氧化物半导体膜

    公开(公告)号：JP2013149994A

    公开(公告)日：2013-08-01

    申请号：JP2013042839

    申请日：2013-03-05

    Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

    Inventor： YAMAZAKI SHUNPEI ,  TSUBUKI MASASHI ,  AKIMOTO KENGO ,  OHARA HIROKI ,  HONDA TATSUYA ,  KOMATA TAKASHI ,  NONAKA YUSUKE ,  TAKAHASHI MASAHIRO ,  MIYANAGA SHOJI

    IPC: H01L21/363 ,  H01L21/20 ,  H01L21/36 ,  H01L29/786

    CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

    Abstract: PROBLEM TO BE SOLVED: To provide an oxide semiconductor film with more stable electric conductivity, and to provide a semiconductor device with high reliability by giving stable electrical characteristics to the semiconductor device with use of the oxide semiconductor film.SOLUTION: The oxide semiconductor film comprises a region having crystal characteristics, and consists of a crystal where, in the region having the crystal characteristics, an a-b plane is approximately parallel to a film surface and a c-axis is approximately perpendicular to the film surface. The oxide semiconductor film comprises structure more electrically stable against irradiation such as visible light or UV light. By using the oxide semiconductor film as a transistor, the highly reliable semiconductor device with stable electric characteristics can be provided.

    Abstract translation: 要解决的问题：提供具有更稳定导电性的氧化物半导体膜，并且通过使用氧化物半导体膜向半导体器件提供稳定的电特性来提供具有高可靠性的半导体器件。解决方案：氧化物半导体膜包括 具有晶体特性的区域，并且由在具有晶体特性的区域中的ab平面大致平行于膜表面并且c轴近似垂直于膜表面的晶体构成。 氧化物半导体膜包括对可见光或UV光等照射的电化学稳定性。 通过使用氧化物半导体膜作为晶体管，可以提供具有稳定电特性的高可靠性的半导体器件。

    Semiconductor device
    3.
    发明专利
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号：JP2013102197A

    公开(公告)日：2013-05-23

    申请号：JP2013005976

    申请日：2013-01-17

    Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

    Inventor： MIYANAGA SHOJI ,  HONDA TATSUYA

    IPC: H01L29/786 ,  H01L21/66

    CPC classification number: H01L29/7869 ,  G01R27/2623 ,  H01L22/14 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696 ,  H01L29/94

    Abstract: PROBLEM TO BE SOLVED: To improve the electric characteristics of a transistor by adjusting the physical property value of an oxide semiconductor layer by solving the problem in which: the correlation between the electric characteristics of a transistor including an oxide semiconductor layer and the physical property value of the oxide semiconductor layer are not yet clarified because the field of the oxide semiconductor has started to attract attention in recent years.SOLUTION: A semiconductor device includes at least a gate electrode, an oxide semiconductor layer, and a gate insulation layer held between the gate electrode and the oxide semiconductor layer. The oxide semiconductor layer has a dielectric constant of 13 or more (or 14 or more).

    Abstract translation: 要解决的问题：为了通过解决以下问题来调节氧化物半导体层的物理性能来改善晶体管的电特性：其中包括氧化物半导体层的晶体管的电特性与 氧化物半导体层的物理性能值尚未得到澄清，因为氧化物半导体的领域近年来开始引起关注。 解决方案：半导体器件至少包括栅电极，氧化物半导体层和保持在栅电极和氧化物半导体层之间的栅绝缘层。 氧化物半导体层的介电常数为13以上（14以上）。 版权所有（C）2013，JPO＆INPIT

    Semiconductor device
    4.
    发明专利
    Semiconductor device 有权
    半导体器件

    公开(公告)号：JP2013084946A

    公开(公告)日：2013-05-09

    申请号：JP2012214066

    申请日：2012-09-27

    Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

    Inventor： HONDA TATSUYA ,  TSUBUKI MASASHI ,  NONAKA YUSUKE ,  SHIMAZU TAKASHI ,  YAMAZAKI SHUNPEI

    IPC: H01L29/786 ,  G02F1/1368 ,  H01L21/336 ,  H01L51/50 ,  H05B33/08 ,  H05B33/14

    CPC classification number: H01L29/78693 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/7869

    Abstract: PROBLEM TO BE SOLVED: To suppress decrease in on-state current in a semiconductor device including an oxide semiconductor.SOLUTION: A transistor based on an oxide semiconductor film comprises: a gate electrode; a gate insulating film which covers the gate electrode and includes an oxide containing silicon; the oxide semiconductor film provided in a region which is in contact with the gate insulating film and overlaps with at least the gate electrode; and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region, which is in contact with the interface with the gate insulating film and has a thickness less than or equal to 5 nm, has a silicon concentration less than or equal to 1.0 atom%, and regions in the oxide semiconductor film other than the first region have lower silicon concentrations than the first region.

    Abstract translation: 要解决的问题：抑制包括氧化物半导体的半导体器件中的导通电流的降低。 解决方案：基于氧化物半导体膜的晶体管包括：栅电极; 栅极绝缘膜，其覆盖所述栅电极并且包括含硅的氧化物; 所述氧化物半导体膜设置在与所述栅极绝缘膜接触并与至少所述栅电极重叠的区域中; 以及与氧化物半导体膜电连接的源电极和漏电极。 在氧化物半导体膜中，与栅极绝缘膜的界面接触并具有小于或等于5nm的厚度的第一区域具有小于或等于1.0原子％的硅浓度， 除了第一区域之外的氧化物半导体膜具有比第一区域更低的硅浓度。 版权所有（C）2013，JPO＆INPIT

    Method of manufacturing oxide semiconductor film, and method of manufacturing transistor
    6.
    发明专利
    Method of manufacturing oxide semiconductor film, and method of manufacturing transistor 审中-公开
    制造氧化物半导体膜的方法和制造晶体管的方法

    公开(公告)号：JP2011205089A

    公开(公告)日：2011-10-13

    申请号：JP2011046681

    申请日：2011-03-03

    Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

    Inventor： HONDA TATSUYA ,  KOMATA TAKASHI ,  NONAKA YUSUKE

    IPC: H01L21/20 ,  H01L21/336 ,  H01L29/786

    CPC classification number: H01L21/02631 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02667 ,  H01L29/66969 ,  H01L29/7869

    Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing an oxide semiconductor film with high crystallinity, and a method of manufacturing a transistor having a high field-effect mobility.SOLUTION: In the method of manufacturing the oxide semiconductor film, an oxide semiconductor film is formed in an atmosphere in which no oxygen is intentionally contained on a substrate, and is thermally treated in the atmosphere containing oxygen, so that the oxide semiconductor film is crystallized. In the method of manufacturing a transistor, a gate electrode is formed on a substrate, and a gate insulating film is formed on the gate electrode. The oxide semiconductor film is formed in such atmosphere as no oxygen is intentionally contained on the gate insulating film, and it is subjected to a first thermal treatment in the atmosphere containing oxygen, so that an oxide semiconductor is crystallized. A source electrode and a drain electrode are formed on the oxide semiconductor film that has been crystallized. An insulating film containing oxygen atoms is formed on the oxide semiconductor film that has been crystallized, the source electrode, and the drain electrode, and then the oxide semiconductor film having been crystallized is subjected to a second thermal treatment for oxidation.

    Abstract translation: 要解决的问题：提供一种制造具有高结晶度的氧化物半导体膜的方法，以及制造具有高场效应迁移率的晶体管的方法。解决方案：在制造氧化物半导体膜的方法中，氧化物半导体膜 形成在基板上没有有意含有氧的气氛中，并且在含氧的气氛中进行热处理，使得氧化物半导体膜结晶化。 在晶体管的制造方法中，在基板上形成栅电极，在栅电极上形成栅极绝缘膜。 氧化物半导体膜形成在没有有意地包含在栅极绝缘膜上的氧气的气氛中，并且在包含氧的气​​氛中进行第一热处理，使得氧化物半导体结晶。 在已经结晶的氧化物半导体膜上形成源电极和漏电极。 在已经结晶的氧化物半导体膜上形成含有氧原子的绝缘膜，源电极和漏电极，然后对结晶的氧化物半导体膜进行第二次氧化处理。

    Method of evaluating oxide semiconductor and method of manufacturing semiconductor device
    8.
    发明专利
    Method of evaluating oxide semiconductor and method of manufacturing semiconductor device 有权
    氧化物半导体评价方法及制造半导体器件的方法

    公开(公告)号：JP2011119712A

    公开(公告)日：2011-06-16

    申请号：JP2010246924

    申请日：2010-11-03

    Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

    Inventor： YAMAZAKI SHUNPEI ,  MIYANAGA SHOJI ,  HONDA TATSUYA

    IPC: H01L21/822 ,  H01L21/66 ,  H01L27/04 ,  H01L29/786

    CPC classification number: H01L22/20 ,  H01L22/14

    Abstract: PROBLEM TO BE SOLVED: To provide a novel method of evaluating an oxide semiconductor since principles of the oxide semiconductor are still unclear and therefore there are no established methods of evaluating an oxide semiconductor although many principles of a silicon semiconductor have been explained.
    SOLUTION: By the evaluation method, the amount of carrier density is evaluated, and the amount of a hydrogen concentration is also evaluated. Specifically, a MOS capacitor (diode (A) or triode (B)) is manufactured, and the CV characteristics of the MOS capacitor are obtained. Then, the carrier density is estimated from the CV characteristics which are thus obtained.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：为了提供一种评价氧化物半导体的新方法，因为氧化物半导体的原理仍不清楚，因此虽然已经说明了硅半导体的许多原理，但是没有建立氧化物半导体的评估方法。 解决方案：通过评估方法评估载体密度的量，并且还评估氢浓度的量。 具体来说，制造MOS电容器（二极管（A）或三极管（B）），获得MOS电容器的CV特性。 然后，根据所获得的CV特性来估计载流子密度。 版权所有（C）2011，JPO＆INPIT

    Semiconductor device
    9.
    发明专利
    Semiconductor device 有权
    半导体器件

    公开(公告)号：JP2010267975A

    公开(公告)日：2010-11-25

    申请号：JP2010129921

    申请日：2010-06-07

    Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

    Inventor： AKIMOTO KENGO ,  HONDA TATSUYA ,  SONE HIROTO

    IPC: H01L29/786 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/28 ,  H01L21/336 ,  H01L51/50

    CPC classification number: H01L29/78696 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/428 ,  H01L21/465 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/045 ,  H01L29/7869

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device for preventing complication in manufacturing processes and moreover achieving reduction in cost by forming a thin film transistor with use of an oxide semiconductor film represented by zinc oxide, and to provide a method of manufacturing the same. SOLUTION: In the semiconductor device, a gate electrode 303 is formed on a substrate 301, a gate insulation film 304 is formed covering the gate electrode 303, an oxide semiconductor film 305 is formed on the gate insulation film 304, and a first conductor film 306 and a second conductor film 307 are formed on the oxide semiconductor film 305. The oxide semiconductor film includes a region 308 crystallized at least with heat treatment process LRTA in a channel forming region. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于防止制造工艺中的复杂性的半导体器件，并且还通过使用由氧化锌表示的氧化物半导体膜形成薄膜晶体管而实现成本降低，并提供制造方法 一样。 解决方案：在半导体器件中，在基板301上形成栅电极303，形成覆盖栅极303的栅极绝缘膜304，在栅极绝缘膜304上形成氧化物半导体膜305， 第一导体膜306和第二导体膜307形成在氧化物半导体膜305上。氧化物半导体膜包括至少在通道形成区域中通过热处理工艺LRTA结晶的区域308。 版权所有（C）2011，JPO＆INPIT

    Light-emitting device and driving method thereof
    10.
    发明专利
    Light-emitting device and driving method thereof 有权
    发光装置及其驱动方法

    公开(公告)号：JP2010044370A

    公开(公告)日：2010-02-25

    申请号：JP2009156590

    申请日：2009-07-01

    Applicant: Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

    Inventor： HONDA TATSUYA

    IPC: G09G3/30 ,  G09G3/20 ,  H01L51/50

    CPC classification number: H01L27/1251 ,  G09G3/3233 ,  G09G2300/0439 ,  G09G2300/0819 ,  G09G2320/043 ,  G09G2320/045

    Abstract: PROBLEM TO BE SOLVED: To provide a technique for controlling a decrease in the luminance of electroluminescence elements due to deterioration of the electroluminescence elements without decreasing the amount of current which flows into these elements when the elements emit light. SOLUTION: Charge corresponding to a potential difference between electrodes of an electroluminescence element is accumulated in a period in which the electroluminescence element emits light, the potential difference is detected from the charges and a reference potential of the electroluminescence element is changed based on the detected potential difference so that the luminance of the electroluminescence element is compensated. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种用于控制由于电致发光元件的劣化而导致的电致发光元件的亮度降低而不减少当元件发光时流入这些元件的电流量的技术。 解决方案：在电致发光元件发光的时段内累积对应于电致发光元件的电极之间的电位差的电荷，从电荷检测电位差，并且基于电致发光元件的参考电位基于 检测电位差，从而补偿电致发光元件的亮度。 版权所有（C）2010，JPO＆INPIT

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