公开(公告)号：JP2007326749A

公开(公告)日：2007-12-20

申请号：JP2006160318

申请日：2006-06-08

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： OGAKI HISASHI ,  NAKAMURA TSUNEO ,  ANDO HIROYUKI ,  FUKUYAMA TOSHIAKI

IPC: C01B33/037

Abstract: PROBLEM TO BE SOLVED: To provide a silicon purification apparatus and a silicon purification method capable of removing high-vapor pressure impurities having a vapor pressure higher than that of silicon and metal impurities from a silicon raw material at the same time. SOLUTION: In the silicon purification apparatus 1, the inside of a melting furnace 11 is kept in vacuum state by a vacuum pump 21, a silicon raw material 10 housed in a crucible 12 in the melting furnace 11 is heated and melted by a heater 13 to be a molten silicon 10a, a cooling body 14 is immersed in the molten silicon 10a to cool the molten silicon 10a, and purified silicon 30 is crystallized out at a silicon crystallizing-out part 29 of the cooling body 14. The heater 13 is controlled by a control means 18 so that the temperature of the silicon raw material 10 is at a temperature of 1,415-1,500°C. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 解决的问题：提供能够同时从硅原料中除去蒸气压高于硅原子和金属杂质的高蒸汽压杂质的硅纯化装置和硅纯化方法。 解决方案：在硅精制设备1中，通过真空泵21将熔炉11的内部保持在真空状态，将容纳在熔炉11中的坩埚12中的硅原料10加热熔化， 作为熔融硅10a的加热器13，将冷却体14浸入熔融硅10a中以冷却熔融硅10a，并且在冷却体14的硅结晶部分29处将纯化的硅30结晶出来。 加热器13由控制装置18控制，使得硅原料10的温度处于1415-1500℃的温度。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006196784A

公开(公告)日：2006-07-27

申请号：JP2005008250

申请日：2005-01-14

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： IMANAKA TAKAO ,  NAKAMURA TSUNEO ,  TADERA TAKAMITSU ,  FUTAGAWA MASAYASU ,  YAMASHITA ZENJIRO ,  ASAI MASATO ,  KIMURA TAKEYA

IPC: H01L21/306 ,  B65G49/07 ,  H01L21/304 ,  H01L21/677

Abstract: PROBLEM TO BE SOLVED: To provide a substrate surface processor capable of preventing the detour of processing liquid to a non-processing surface at the opposite side of the processing surface of a substrate upon conveying the substrate to effect one side processing.
SOLUTION: The substrate surface processor 20 for processing the surface of the substrate 21 is constituted of a processing liquid tank 23 for receiving the processing liquid 22, a plurality of conveyance rollers 24 whose one part or the whole of them are dipped into the processing liquid 22 received in the processing liquid tank 23, and which are provided so as to be free of rotation to convey the substrate 21; and a roller driving means for driving the rotation of the conveyance rollers 24. In this case, the length W2 in the rotating axial direction of the conveyance rollers 24 is longer than the width W1 of the substrate 21, and recesses and projections constituting grooves extended into the rotary axial line direction are formed on the surface of the conveyance rollers 24.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种基板表面处理器，其能够防止在输送基板时在处理表面的相对侧处的非处理表面的处理液体绕行而进行一侧处理。 解决方案：用于处理基板21的表面的基板表面处理器20由用于接收处理液22的处理液槽23，其一部分或全部被浸入的多个输送辊24构成 处理液体22容纳在处理液槽23中，并且被设置为不旋转以输送基板21; 以及用于驱动传送辊24的旋转的辊驱动装置。在这种情况下，输送辊24的旋转轴向长度W2比基板21的宽度W1长，并且构成凹槽的凹凸突出 在输送辊24的表面上形成旋转轴线方向。（C）版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2009274365A

公开(公告)日：2009-11-26

申请号：JP2008128768

申请日：2008-05-15

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： NAKAGAWA MASATOSHI ,  NAKAMURA TSUNEO ,  TAKEUCHI HIROAKI ,  OKAZAKI SHINYA

IPC: B41M1/08 ,  B41N1/14

Abstract: PROBLEM TO BE SOLVED: To provide a printing method good in ink transfer, a printing apparatus, a printing plate used in it, and a pattern film. SOLUTION: The printing method includes a process in which with the use of a repellent intaglio in which a projection 3 is an ink-affinitive layer 13, and a recess 2 is an ink-repellent layer 12, the whole surface of the repellent intaglio is coated with an ink layer 14, a process in which a substrate 1 is contacted with the repellent intaglio through the ink layer 14, and process in which by making the substrate 1 secede from the repellent intaglio, the ink layer arranged on the upper surface of the ink-repellent layer of the repellent intaglio is transferred to the substrate. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供油墨转印良好的印刷方法，印刷装置，其中使用的印刷版和图案膜。 解决方案：印刷方法包括一种方法，其中使用其中突起3为油墨亲合层13，凹槽2为防油层12的驱避凹版，整个表面为 防水凹版涂覆有油墨层14，其中基材1通过油墨层14与排斥凹版接触的方法，以及通过使基材1从排斥凹版脱模而成的方法， 防水凹版的拒油层的上表面被转印到基材上。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2008262979A

公开(公告)日：2008-10-30

申请号：JP2007102954

申请日：2007-04-10

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： NAKAMURA TSUNEO ,  OKAMOTO MASAYA

IPC: H01L21/336 ,  H01L21/28 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To manufacture a thin-film transistor element by reducing the number of photolithographic processes. SOLUTION: The thin-film transistor element has a gate electrode layer arranged on the main surface 1a of a substrate, a gate insulating layer, a first semiconductor layer 4 and a second semiconductor layer arranged so as to coat the first semiconductor layer 4. The thin-film transistor element further has a source electrode layer 6a and a drain electrode layer 6b arranged on the upper side of the gate insulating layer through the gate insulating layer, the first semiconductor layer 4 and the second semiconductor layer respectively. The source electrode layer 6a and the drain electrode layer 6b are opposed mutually while holding a channel region 12 in a plan view. When the direction vertical to the direction 71 of a straight line tying the source electrode layer 6a and the drain electrode layer 6b is set in the channel-width direction 72, the width of the opposed section of the source electrode layer 6a and the drain electrode layer 6b regarding the channel-width direction 72 is longer than a size Wch in the channel-width direction of the channel region 12. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：通过减少光刻工艺的数量制造薄膜晶体管元件。 解决方案：薄膜晶体管元件具有布置在基板的主表面1a上的栅极电极层，栅极绝缘层，第一半导体层4和第二半导体层，其布置成涂覆第一半导体层 薄膜晶体管元件还具有通过栅极绝缘层，第一半导体层4和第二半导体层分别配置在栅极绝缘层的上侧的源极电极层6a和漏极电极层6b。 源极电极层6a和漏极电极层6b相互相对，同时保持沟道区域12在平面图中。 当垂直于与源电极层6a和漏电极层6b相连的直线方向71的方向设置在沟道宽度方向72上时，源电极层6a和漏电极的相对部分的宽度 层6b关于通道宽度方向72的长度大于通道区域12的通道宽度方向上的尺寸Wch。（C）2009，JPO＆INPIT

公开(公告)号：JP2007067102A

公开(公告)日：2007-03-15

申请号：JP2005249982

申请日：2005-08-30

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： IMANAKA TAKAO ,  ISHIDA JUNICHI ,  YOSHIDA MITSUNOBU ,  NAKATSUKA MAMORU ,  NAKAMURA TSUNEO

IPC: H01L21/66 ,  G01N21/956

Abstract: PROBLEM TO BE SOLVED: To provide a visual inspection method in which stains can be detected in a polycrystalline semiconductor wafer with a grain boundary also. SOLUTION: A computer 10 picks up a low angle and high angle image of each face by a front face imaging device 20 and a rear face imaging device 40. The computer 10 computes a brightness difference for each pixel at the same position of a polycrystalline silicon wafer 2 in the imaged low angle and high angle image, and generates stain candidate image data using a pixel, at a position in which the computed brightness difference is smaller than the preset brightness difference as a pixel candidate representing stains for each face. The computer 10 compares the stain candidate image data of two faces with each other for each pixel at a position where the two faces are opposed to each other, and generates inequality image data using the pixel at the position corresponding to a position of an opposing pixel in which data indicating whether or not it is a pixel candidate representing stains is inequal as an inequality pixel. When an area composed of inequality pixels among pixels of images indicated by the inequality image data satisfies preset stain conditions, it is determined that there are stains. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种在具有晶界的多晶半导体晶片中可以检测污渍的目视检查方法。 解决方案：计算机10通过前脸成像装置20和后脸成像装置40拾取每个脸部的低角度和高角度图像。计算机10计算在相同位置处的每个像素的亮度差异 在成像的低角度和高角度图像中的多晶硅晶片2，并且在计算的亮度差小于预设亮度差的位置处使用像素生成污点候选图像数据作为表示每个面的污渍的像素候选 。 计算机10将两个面彼此相对的位置处的每个像素彼此的两个面的污点候选图像数据进行比较，并且使用与相对像素的位置相对应的位置处的像素生成不等式图像数据 其中指示其是否是表示污点的像素候选的数据不等于不等式像素。 当由不等式图像数据指示的图像的像素中的不等式像素组成的区域满足预设的污点条件时，确定存在污点。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006196783A

公开(公告)日：2006-07-27

申请号：JP2005008249

申请日：2005-01-14

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： NAKAMURA TSUNEO ,  IMANAKA TAKAO ,  FUTAGAWA MASAYASU ,  TADERA TAKAMITSU ,  YAMASHITA ZENJIRO ,  ASAI MASATO

IPC: H01L21/306 ,  B65G49/07 ,  H01L21/304 ,  H01L21/677

Abstract: PROBLEM TO BE SOLVED: To provide a substrate surface processing apparatus capable of uniform processing by supplying processing liquid stably to the processing surface of a substrate, and capable of preventing the detour of processing liquid into the non-processing surface of the substrate with simple configuration.
SOLUTION: The substrate surface processing apparatus 30 for processing the surface of the substrate 31 is provided with a configuration comprising a processing liquid tank 33 for receiving the processing liquid 32; a plurality of conveyance rollers 34 whose one part is dipped into the processing liquid 32 received in the processing liquid tank 33, and which are provided so as to be turned freely to convey the substrate 31; and a roller driving means for driving the rotation of the conveyance rollers 34. In this case, the conveyance rollers 34 are provided with the length in the rotating axial direction longer than the width of the substrate 31, and recesses and projections are formed on the surfaces thereof.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 解决的问题：提供一种能够通过将处理液稳定地供给到基板的处理表面并能够防止将处理液迂回进入基板的非处理表面的均匀加工的基板表面处理装置 配置简单。 解决方案：用于处理基板31的表面的基板表面处理装置30设置有包括用于接收处理液体32的处理液体箱33的构造; 多个传送辊34，其一部分被浸入处理液体容纳在处理液体容器33中的处理液体32中，并被设置成自由转动以传送基板31; 以及用于驱动输送辊34的旋转的辊驱动装置。在这种情况下，传送辊34设置有比基板31的宽度更长的旋转轴向长度，并且凹部和突起 其表面。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006024634A

公开(公告)日：2006-01-26

申请号：JP2004199481

申请日：2004-07-06

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： NAKAMURA TSUNEO ,  OKAMOTO NAOKO ,  OKI KAZUKI

IPC: H01L21/205 ,  C23C16/509 ,  H01L21/3065 ,  H05H1/46

Abstract: PROBLEM TO BE SOLVED: To provide a plasma processor capable of manufacturing a high quality thin-film device or the like, at a high speed. SOLUTION: The plasma processor includes a treatment chamber 1, having a substrate 5 to be processed located therein, a gas inlet 7 for introducing a gas into the treatment chamber 1, and a plasma source provided in the chamber 1 for applying the plasma processing to the substrate 5. The plasma source has a cathode electrode 2 (first electrode), a dielectric 4 provided on part of an electrode surface of the cathode electrode 2, and an anode electrode 3 (second electrode) provided on the dielectric 4, while the anode electrode 3 is provided to be capable of relatively stretching to the dielectric 4 in the longitudinal direction of the anode electrode 3. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供能够高速制造高质量薄膜器件等的等离子体处理器。 解决方案：等离子体处理器包括处理室1，其具有待处理的基板5，用于将气体引入处理室1的气体入口7和设置在室1中的等离子体源， 等离子体处理到基板5.等离子体源具有阴极电极2（第一电极），设置在阴极电极2的电极表面的一部分上的电介质4和设置在电介质4上的阳极电极3（第二电极） 而阳极电极3设置成能够在阳极电极3的纵向方向上相对于电介质4延伸。（C）2006年，JPO和NCIPI

公开(公告)号：JP2005277136A

公开(公告)日：2005-10-06

申请号：JP2004088838

申请日：2004-03-25

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： IMANAKA TAKAO ,  NAMIKATA RYOJI ,  NAKAMURA TSUNEO ,  HOJO YOSHIYUKI

IPC: B28D5/04 ,  B23K26/00 ,  B23K26/40 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a substrate which can surely manufacture the substrate from an ingot and readily, without scraps. SOLUTION: The condensing point 5a of a laser beam 5 is relatively moved to the ingot 1, in a state with the condensing point 5a of the laser beam 5 matching the interior of the ingot 1. A processing region 10 by substantially planar multiphoton absorption, extending in a direction perpendicular direction to the radiating direction of the laser beam 5 is formed in the interior of the ingot 1. In a part 11 of one side, bordered on the processing region 10 in the ingot 1 and a part 12 of other side are separated in the processing region 12, and the substrate 2, is manufactured from the ingot 1. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种可以容易地，无需废料就可以从铸块确定地制造基材的基板的制造方法。

解决方案：激光束5的聚光点5a在激光束5的聚光点5a与晶锭1的内部相匹配的状态下相对移动到晶锭1。处理区域10基本上平面 在锭1的内部形成在与激光束5的辐射方向正交的方向上延伸的多光子吸收。在一侧的部分11中，在锭1的加工区域10和部分12 的另一侧在处理区域12中分离，并且基板2由铸块1制造。版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005064014A

公开(公告)日：2005-03-10

申请号：JP2003207138

申请日：2003-08-11

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： NAKAMURA TSUNEO

IPC: H01L31/04

CPC classification number: H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

Abstract: PROBLEM TO BE SOLVED: To provide a thin film crystal solar cell of high performance (high efficiency) of low cost LBSF (Localized BSF) structure and strip lateral electrode structure, and also to provide its manufacturing method. SOLUTION: The method for manufacturing a thin film crystal solar cell is characterized by containing: a process (A) wherein a solid phase impurity diffusing source layer is formed in a predetermined region, after a silicon film is formed on the whole surface on a maintenance substrate, or a silicon film is formed on the whole surface after the solid phase impurity diffusing source layer is formed in the predetermined region on the maintenance substrate; and a process (B) wherein the silicon film is crystallized or recrystallized by applying heat or optical energy, and a high concentration impurity region is formed in a predetermined region of the silicon film, thereby forming a crystal silicon layer having the high concentration impurity region. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供低成本LBSF（局部BSF）结构和带状横向电极结构的高性能（高效率）的薄膜晶体太阳能电池，并且还提供其制造方法。 解决方案：制造薄膜晶体太阳能电池的方法的特征在于包括：在整个表面上形成硅膜之后，在预定区域中形成固相杂质扩散源层的工艺（A） 在维持基板上的预定区域中形成固相杂质扩散源层之后，在整个表面上形成保护基板上的硅膜或硅膜; 以及其中通过施加热或光能使硅膜结晶或重结晶的工艺（B），并且在硅膜的预定区域中形成高浓度杂质区，从而形成具有高浓度杂质区的晶体硅层 。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2009070899A

公开(公告)日：2009-04-02

申请号：JP2007235386

申请日：2007-09-11

Applicant: Sharp Corp ,  シャープ株式会社

Inventor： TAKAHASHI DAISUKE ,  NAKAMURA TSUNEO ,  KIYOUHO MASANORI ,  TAKEDA NAOKI

IPC: H01L21/3065 ,  H01M8/02 ,  H05H1/24

CPC classification number: Y02E60/50

Abstract: PROBLEM TO BE SOLVED: To provide a plasma processing method and a plasma processing device for processing a pattern that is finer in dimension than plasma. SOLUTION: The plasma processing device includes an upper electrode 2 for generating plasma 1, a stage 3 on which a base material 6 to be subjected to plasma processing is disposed, a power supply 4 which applies a voltage to the upper electrode 2, a moving mechanism 5 disposed on the upper electrode 2, and a control unit 120. The control unit 120 controls the operation of the power supply 4 and the moving mechanism 5 to repeat generation of the plasma 1 and move of the upper electrode 2 through the moving mechanism 5. The moving mechanism 5 moves the upper electrode 2 so that an exposure area of the base material 6 to the plasma 1 before the move overlaps the exposure area after the move. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供等离子体处理方法和等离子体处理装置，用于处理尺寸比等离子体更精细的图案。 解决方案：等离子体处理装置包括用于产生等离子体1的上电极2，设置有待等离子体处理的基材6的载物台3，向上电极2施加电压的电源4 ，设置在上电极2上的移动机构5和控制单元120.控制单元120控制电源4和移动机构5的操作，以重复等离子体1的产生并且上电极2通过 移动机构5使上部电极2移动，使得在移动之后移动与基底材料6的暴露面积与移动之间的曝光区域重叠。 版权所有（C）2009，JPO＆INPIT