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公开(公告)号:JP4851444B2
公开(公告)日:2012-01-11
申请号:JP2007516911
申请日:2005-05-11
申请人: ハッチ リミテッドHatch Ltd.
CPC分类号: H05B7/102
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公开(公告)号:JP2010277753A
公开(公告)日:2010-12-09
申请号:JP2009127381
申请日:2009-05-27
发明人: SUGIMOTO TOSHIYUKI
摘要: PROBLEM TO BE SOLVED: To provide a contact type heating device which carries out melt processing of a workpiece of high-melting-point material of which a melting point is 500°C or higher.
SOLUTION: The heating device 100 includes a bar-shaped metal machining electrode 110 which is electrically grounded, and a heating electrode 120 for heating the machining electrode. The machining electrode includes a first region 111 including the electrode's tip end, and a second region 112 except for the first region. The heating electrode emits arc discharge to the second region of the machining electrode and heats the machining electrode.
COPYRIGHT: (C)2011,JPO&INPIT摘要翻译: 解决的问题:提供对熔点为500℃以上的高熔点材料的工件进行熔融加工的接触式加热装置。 解决方案:加热装置100包括电接地的棒状金属加工电极110和用于加热加工电极的加热电极120。 加工电极包括包括电极前端的第一区域111和除第一区域之外的第二区域112。 加热电极向加工电极的第二区域发射电弧放电,并加热加工电极。 版权所有(C)2011,JPO&INPIT
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公开(公告)号:JP2005293945A
公开(公告)日:2005-10-20
申请号:JP2004105130
申请日:2004-03-31
申请人: Tama Tlo Kk , タマティーエルオー株式会社
发明人: IWAO TORU , INABA TSUGUNORI
摘要: PROBLEM TO BE SOLVED: To provide a plasma heating device, capable of simply controlling the area and depth to which plasma heating treatment can be applied. SOLUTION: The plasma heating device 1A comprises a plurality of electrodes with nozzle 10A, 10B arranged in a direction getting closer to each other the closer it is to the tip part discharging plasma arcs Aa, Ab; A direct current power source 8A impressing direct current voltage between the electrodes of the electrode with nozzles, or between the electrodes with nozzle 10A, 10B and a substance to be heated 100, and discharging the plasma arcs Aa, Ab as flow channels of the direct current; and heating part control means 7, 20 for discharging a gas G to the area near to the part where the plasma arcs Aa, Ab are jointing with each other, and controlling the contact state of the plasma arcs Aa, Ab with the substance to be heated 100. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译: 要解决的问题:提供能够简单地控制可以应用等离子体加热处理的面积和深度的等离子体加热装置。 解决方案:等离子体加热装置1A包括多个电极,其具有沿彼此越接近的方向布置的喷嘴10A,10B越靠近排出等离子弧Aa,Ab的尖端部分; 直流电源8A在电极的电极与喷嘴之间或在具有喷嘴10A,10B的电极与被加热物100之间施加直流电压,并且将等离子体弧Aa,Ab作为直接的流动通道排出 当前; 以及用于将气体G排出到等离子体电弧Aa,Ab相互接合的部分附近的区域的加热部控制装置7,20,并且控制等离子体电弧Aa,Ab与物质的接触状态 加热100.版权所有(C)2006,JPO&NCIPI
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公开(公告)号:JP3644012B2
公开(公告)日:2005-04-27
申请号:JP30401099
申请日:1999-10-26
申请人: 株式会社川端エンジニアリング , 椿本興業株式会社
发明人: 孝男 川端
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公开(公告)号:JPWO2003029742A1
公开(公告)日:2005-01-20
申请号:JP2003532912
申请日:2002-09-27
IPC分类号: F27B17/02 , F27B17/00 , F27D7/06 , F27D11/00 , F27D19/00 , F27D21/02 , H05B6/32 , H05B7/00 , H05B7/06 , H05B7/101
CPC分类号: F27D21/02 , F27B17/00 , F27B17/0016 , F27B17/02 , F27D7/06 , F27D11/00 , F27D19/00 , H05B6/32
摘要: 真空チャンバー内に、試料の浮遊位置を中心として互いに直交する3軸上で各々対向する3組の電極を備えると共に、真空チャンバーに、試料の浮遊位置に向けたアクセス用ポートを三次元的に配置した静電浮遊炉とし、試料に対するアクセス方向を多方向にして、各種機器の配置の自由度を高めると共に、機器の増設にも容易に対処し得るものとした。
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公开(公告)号:JP2004322135A
公开(公告)日:2004-11-18
申请号:JP2003118684
申请日:2003-04-23
发明人: HIRATA YOSHINORI , OCHI HISAYOSHI
CPC分类号: Y02P10/256 , Y02P10/259
摘要: PROBLEM TO BE SOLVED: To provide a micro-thermoforming method capable of performing microforming below microorder and an electrode used for the same. SOLUTION: In the micro-thermoforming of subjecting a member to be thermally formed to microforming by using the member to be thermally formed as an anode, installing a cathode opposite to the section to be treated of the anode by applying a voltage between the cathode and the anode, the pulse voltage of several nanoseconds to several tens microseconds is applied between the cathode electrolytically polished until the leading front of the cathode is formed to a needle shape of several nm to several μm in radius of curvature and the anode (member to be thermally formed), by which the member to be thermally formed is subjected to thermoforming, such as heating, cutting, melting and welding. COPYRIGHT: (C)2005,JPO&NCIPI
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公开(公告)号:JP2004206997A
公开(公告)日:2004-07-22
申请号:JP2002373695
申请日:2002-12-25
申请人: Nippon Denshi Kogyo Kk , 日本電子工業株式会社
发明人: TAKEUCHI HIROTSUGU , URAO RYOICHI
摘要: PROBLEM TO BE SOLVED: To provide a treatment method of heating a matter in powder state, particle state or aggregate state or the like at high temperature in a stable state of discharge in high efficiency, and of reacting the matters with plasma by the use of hollow negative electrode discharge.
SOLUTION: Matter 50 in an appropriate state such as powder, particle, and aggregate is placed in a hollow negative electrode 12, to be heated at high temperature by hollow negative electrode discharge, and the matter 50 and the plasma are made to react with each other.
COPYRIGHT: (C)2004,JPO&NCIPI-
公开(公告)号:JP2002195763A
公开(公告)日:2002-07-10
申请号:JP2000397554
申请日:2000-12-27
申请人: NIPPON KOKAN KK
发明人: IIYAMA MASATO
摘要: PROBLEM TO BE SOLVED: To provide means, capable of safe operation by solving the problem of abnormal short life time of the bottom of a direct current electric furnace. SOLUTION: The problem is solved by a direct-current electric furnace bottom electrode. An electrode comprises a plurality of metal electrode body, a carbon containing electrically conductive brick with which the electrode body is filled, a metal substrate, and a stamp member laid between the substrate and the brick.
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