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    화학 기상 증착에 의해 증착된 규소 층의 Ｋ값을감소시키는 방법
    2.
    发明公开
    화학 기상 증착에 의해 증착된 규소 층의 Ｋ값을감소시키는 방법 有权
    通过化学气相沉积沉积的SiOC层中减少介电常数的方法

    公开(公告)号：KR1020020027269A

    公开(公告)日：2002-04-13

    申请号：KR1020010061442

    申请日：2001-10-05

    Applicant: 어플라이드 머티어리얼스, 인코포레이티드

    Inventor： 가일라드,프레드릭 ,  림,티안-호 ,  이에,엘리 ,  루,융-쳉 ,  야우,와이-팬 ,  리우,쿠오-웨이 ,  젱,신-푸 ,  시아,리-쿤

    IPC: C23C16/22

    CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/314 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76828

    Abstract: PURPOSE: A method for depositing dielectric layers on a substrate and the structures formed by the dielectric layer are provided. CONSTITUTION: The method for processing a substrate comprises depositing a dielectric layer comprising silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than 3; and depositing a silicon and carbon containing layer on the dielectric layer. The method for processing a substrate comprises depositing a dielectric layer on the substrate by reacting an organosilane compound having three or more alkyl groups with ozone, wherein the dielectric layer has a carbon content between 5% and 50% by atomic weight and a dielectric constant less than 3; and depositing a silicon carbide layer or a doped silicon carbide layer on the dielectric layer by reacting an alkylsilane compound at plasma conditions sufficient to reduce the dielectric constant of the dielectric layer. The substrate structure comprises a dielectric layer comprising silicon, oxygen, and carbon, wherein the dielectric layer has a carbon content of at least 1% by atomic weight; and a silicon and carbon containing layer capping the dielectric layer. The damascene structure comprises a dielectric layer comprising silicon, oxygen, and carbon and defining one or more interconnects, the dielectric layer having a carbon content of at least 1% by atomic weight; and a silicon and carbon containing layer capping the dielectric layer and further defining the one or more interconnects.

    Abstract translation: 目的：提供一种在基板上沉积电介质层的方法和由电介质层形成的结构。 构成：用于处理衬底的方法包括通过化学气相沉积在衬底上沉积包含硅，氧和碳的电介质层，其中介电层的碳含量至少为原子量的1％，介电常数较小 比3; 以及在所述电介质层上沉积含硅和碳的层。 用于处理基板的方法包括通过使具有三个或更多个烷基的有机硅烷化合物与臭氧反应而在基板上沉积电介质层，其中介电层的碳含量为原子量的5％至50％，介电常数较小 比3; 以及通过使烷基硅烷化合物在足以降低介电层的介电常数的等离子体条件下，在介电层上沉积碳化硅层或掺杂的碳化硅层。 衬底结构包括包含硅，氧和碳的电介质层，其中介电层具有至少1％原子量的碳含量; 以及覆盖电介质层的含硅和碳的层。 所述镶嵌结构包括包含硅，氧和碳并且限定一个或多个互连的电介质层，所述电介质层具有至少1％原子量的碳含量; 以及含有硅和碳的层，覆盖介电层并进一步限定一个或多个互连。

    듀얼 주파수 바이어스를 갖는 화학적 기상 증착 챔버 및이를 이용하여 포토마스크를 제조하기 위한 방법
    8.
    发明公开
    듀얼 주파수 바이어스를 갖는 화학적 기상 증착 챔버 및이를 이용하여 포토마스크를 제조하기 위한 방법 失效
    具有双倍频率的化学气相沉积室和使用其制造光电子的方法

    公开(公告)号：KR1020070015031A

    公开(公告)日：2007-02-01

    申请号：KR1020060070779

    申请日：2006-07-27

    Applicant: 어플라이드 머티어리얼스, 인코포레이티드

    Inventor： 쿠마르,아자이 ,  그레월,비린더 ,  야우,와이-팬

    IPC: H01L21/205

    CPC classification number: C23C16/509 ,  C23C16/56 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32706 ,  H01L21/67069 ,  H01L21/67207

    Abstract: A CVD chamber having a dual frequency bias is provided to supply an improved cluster tool for incorporating processes for fabricating photomasks for an improved photomask fabricating process by avoiding nonuniformity of etched features of a photomask. A substrate support part(518) is disposed in the inner volume of a chamber body(502). An electrode is built in the substrate support part. A first RF power is coupled to the electrode. A second RF power is coupled to the electrode. A shower head(520) is disposed in the inner volume of the chamber body. A third RF power is coupled to the shower head. A reticle adapter is disposed on the substrate support part, including a cover ring disposed on the substrate support part and a capture ring disposed on the cover ring such that the capture ring defines a substrate receiving pocket.

    Abstract translation: 提供具有双频偏置的CVD室以提供改进的簇工具，用于引入用于通过避免光掩模的蚀刻特征的不均匀性来改进光掩模制造工艺制造光掩模的工艺。 衬底支撑部分（518）设置在室主体（502）的内部容积中。 电极被内置在基板支撑部分中。 第一RF功率耦合到电极。 第二RF功率耦合到电极。 淋浴头（520）设置在室主体的内部容积中。 第三RF功率耦合到淋浴喷头。 掩模版适配器设置在基板支撑部分上，包括设置在基板支撑部分上的盖环和设置在盖环上的捕获环，使得捕获环限定基板接收袋。

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