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33 条记录 (耗时 0.032 秒)

    레지스트 조성물, 및 그것을 사용한 레지스트막과 패턴형성방법
    8.
    发明公开
    레지스트 조성물, 및 그것을 사용한 레지스트막과 패턴형성방법 无效
    耐蚀组合物，耐蚀膜和图案形成方法

    公开(公告)号：KR1020120104950A

    公开(公告)日：2012-09-24

    申请号：KR1020120025517

    申请日：2012-03-13

    申请人： 후지필름 가부시키가이샤

    发明人： 후지이카나 ,  가토케이타 ,  오다니타다히로 ,  다카하시히데노리 ,  니시야마후미유키

    IPC分类号： G03F7/004 ,  G03F7/039 ,  G03F7/00 ,  H01L21/027

    CPC分类号： G03F7/0045 ,  G03F7/00 ,  G03F7/0002 ,  G03F7/004 ,  G03F7/039 ,  G03F7/0392 ,  H01L21/027 ,  H01L21/0271

    摘要： PURPOSE: A resist composition, a resist film using the composition, and a pattern forming method using the composition are provided to include a resin, of which dissolution speed to a developer is changed by the action of acid. CONSTITUTION: A resist composition includes a resin with a cycloaliphatic structure, a compound generating acid by the irradiation of active rays or radiation rays, and a compound represented by chemical formula EA. The dissolution speed of the resin to a developer is changed by the action of acid. In chemical formula EA, o, p, and q are the integer of 1 or more; n is the integer of 3 or more; r and s are the integer of 1 or more; t is the integer of 0 or more; R1 and R2 are respectively hydrogen groups, alkyl groups, aryl groups, or aralkyl groups; R3 is a hydrogen group, an alkyl group, an aryl group, or an aralkyl group if t is 1 or more; R3 is an alkyl group, an aryl group, or an aralkyl group if t is 0.

    摘要翻译： 目的：提供抗蚀剂组合物，使用该组合物的抗蚀剂膜和使用该组合物的图案形成方法，以包括通过酸的作用改变对显影剂的溶解速度的树脂。 构成：抗蚀剂组合物包括具有脂环族结构的树脂，通过照射活性射线或辐射线产生酸的化合物和由化学式EA表示的化合物。 树脂对显影剂的溶解速度由于酸的作用而改变。 在化学式EA中，o，p和q为1以上的整数; n为3以上的整数， r和s为1以上的整数; t为0以上的整数; R1和R2分别是氢基，烷基，芳基或芳烷基; 如果t为1以上，则R 3为氢基，烷基，芳基或芳烷基; 如果t为0，则R 3为烷基，芳基或芳烷基。

    패턴 형성 방법 및 그 패턴 형성 방법에 사용되는 현상액
    9.
    发明公开
    패턴 형성 방법 및 그 패턴 형성 방법에 사용되는 현상액 有权
    用于图案形成方法的图案形成方法和开发方案

    公开(公告)号：KR1020120002468A

    公开(公告)日：2012-01-05

    申请号：KR1020110063611

    申请日：2011-06-29

    申请人： 후지필름 가부시키가이샤

    发明人： 에노모토유이치로 ,  타루타니신지 ,  카미무라소우 ,  이와토카오루 ,  카토케이타 ,  후지이카나

    IPC分类号： G03F7/32 ,  G03F7/00

    CPC分类号： G03F7/325 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/422 ,  G03F7/32 ,  G03F7/00 ,  H01L21/027

    摘要： PURPOSE: A method for forming patterns and a developing solution for the same are provided to stably form patterns with reduced impurity attaching defects by implementing a pattern forming process based on the developing solution. CONSTITUTION: A method for forming patterns includes the following: A film is formed based on a chemically amplified resist composition. The film is exposed. The exposed film is developed based on a developing solution containing an organic solvent. The content of an alcohol compound in the developing solution is more than or equal to 0ppm and is less than 500ppm based on the total weight of the developing solution. The organic solvent is selected from ester compound and ketone compounds.

    摘要翻译： 目的：提供用于形成图案的方法及其显影液，通过实施基于显影液的图案形成工艺，稳定地形成具有减少的杂质附着缺陷的图案。 构成：用于形成图案的方法包括以下：基于化学放大抗蚀剂组合物形成膜。 这部电影是暴露的。 基于含有有机溶剂的显影溶液显影曝光的薄膜。 显影液中的醇类化合物的含量相对于显影液的总重量大于等于0ppm，小于500ppm。 有机溶剂选自酯化合物和酮化合物。