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公开(公告)号：TWI646644B
公开(公告)日：2019-01-01
申请号：TW106121861
申请日：2010-04-20
发明人： 安村文次 , YASUMURA,BUNJI , 土屋文男 , TSUCHIYA,FUMIO , 伊東久範 , ITO,HISANORI , 井手琢二 , IDE,TAKUJI , 川邊直樹 , KAWANABE,NAOKI , 佐藤齊尚 , SATO,MASANAO
IPC分类号： H01L23/488
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公开(公告)号：TW201733061A
公开(公告)日：2017-09-16
申请号：TW106121861
申请日：2010-04-20
发明人： 安村文次 , YASUMURA,BUNJI , 土屋文男 , TSUCHIYA,FUMIO , 伊東久範 , ITO,HISANORI , 井手琢二 , IDE,TAKUJI , 川邊直樹 , KAWANABE,NAOKI , 佐藤齊尚 , SATO,MASANAO
IPC分类号： H01L23/488
CPC分类号： H01L22/32 , H01L23/3114 , H01L23/49816 , H01L23/49838 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/85 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05073 , H01L2224/05553 , H01L2224/05624 , H01L2224/0613 , H01L2224/13099 , H01L2224/131 , H01L2224/16225 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48157 , H01L2224/48227 , H01L2224/4845 , H01L2224/48463 , H01L2224/48465 , H01L2224/48624 , H01L2224/49171 , H01L2224/73265 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85399 , H01L2924/00012 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01025 , H01L2924/01033 , H01L2924/0105 , H01L2924/01051 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/10253 , H01L2924/12041 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/20752 , H01L2924/20753 , H01L2924/30107 , H01L2924/3512 , H01L2924/00
摘要： 本發明提供一種可防止半導體裝置最上層之保護膜之裂痕，以謀求半導體裝置之可靠性之提高之技術。將半導體晶片之主面上所形成之接合焊墊BP1設為長方形狀，並以使接合焊墊BP1之打線接合區域BP1w中之保護膜5之重疊寬度寬於接合焊墊BP1之探針區域BP1p中之保護膜5之重疊寬度之方式，而於接合焊墊BP1上之保護膜5上形成開口部6。
简体摘要： 本发明提供一种可防止半导体设备最上层之保护膜之裂痕，以谋求半导体设备之可靠性之提高之技术。将半导体芯片之主面上所形成之接合焊垫BP1设为长方形状，并以使接合焊垫BP1之打线接合区域BP1w中之保护膜5之重叠宽度宽于接合焊垫BP1之探针区域BP1p中之保护膜5之重叠宽度之方式，而于接合焊垫BP1上之保护膜5上形成开口部6。
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公开(公告)号：TWI596724B
公开(公告)日：2017-08-21
申请号：TW105120867
申请日：2010-04-20
发明人： 安村文次 , YASUMURA, BUNJI , 土屋文男 , TSUCHIYA, FUMIO , 伊東久範 , ITO, HISANORI , 井手琢二 , IDE, TAKUJI , 川邊直樹 , KAWANABE, NAOKI , 佐藤齊尚 , SATO, MASANAO
IPC分类号： H01L23/488
CPC分类号： H01L22/32 , H01L23/3114 , H01L23/49816 , H01L23/49838 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/85 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05073 , H01L2224/05553 , H01L2224/05624 , H01L2224/0613 , H01L2224/13099 , H01L2224/131 , H01L2224/16225 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48157 , H01L2224/48227 , H01L2224/4845 , H01L2224/48463 , H01L2224/48465 , H01L2224/48624 , H01L2224/49171 , H01L2224/73265 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85399 , H01L2924/00012 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01025 , H01L2924/01033 , H01L2924/0105 , H01L2924/01051 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/10253 , H01L2924/12041 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/20752 , H01L2924/20753 , H01L2924/30107 , H01L2924/3512 , H01L2924/00
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公开(公告)号：TW201637161A
公开(公告)日：2016-10-16
申请号：TW105120867
申请日：2010-04-20
发明人： 安村文次 , YASUMURA, BUNJI , 土屋文男 , TSUCHIYA, FUMIO , 伊東久範 , ITO, HISANORI , 井手琢二 , IDE, TAKUJI , 川邊直樹 , KAWANABE, NAOKI , 佐藤齊尚 , SATO, MASANAO
IPC分类号： H01L23/488
CPC分类号： H01L22/32 , H01L23/3114 , H01L23/49816 , H01L23/49838 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/85 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05073 , H01L2224/05553 , H01L2224/05624 , H01L2224/0613 , H01L2224/13099 , H01L2224/131 , H01L2224/16225 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48157 , H01L2224/48227 , H01L2224/4845 , H01L2224/48463 , H01L2224/48465 , H01L2224/48624 , H01L2224/49171 , H01L2224/73265 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85399 , H01L2924/00012 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01025 , H01L2924/01033 , H01L2924/0105 , H01L2924/01051 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/10253 , H01L2924/12041 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/20752 , H01L2924/20753 , H01L2924/30107 , H01L2924/3512 , H01L2924/00
摘要： 本發明提供一種可防止半導體裝置最上層之保護膜之裂痕，以謀求半導體裝置之可靠性之提高之技術。將半導體晶片之主面上所形成之接合焊墊BP1設為長方形狀，並以使接合焊墊BP1之打線接合區域BP1w中之保護膜5之重疊寬度寬於接合焊墊BP1之探針區域BP1p中之保護膜5之重疊寬度之方式，而於接合焊墊BP1上之保護膜5上形成開口部6。
简体摘要： 本发明提供一种可防止半导体设备最上层之保护膜之裂痕，以谋求半导体设备之可靠性之提高之技术。将半导体芯片之主面上所形成之接合焊垫BP1设为长方形状，并以使接合焊垫BP1之打线接合区域BP1w中之保护膜5之重叠宽度宽于接合焊垫BP1之探针区域BP1p中之保护膜5之重叠宽度之方式，而于接合焊垫BP1上之保护膜5上形成开口部6。
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公开(公告)号：TWI548051B
公开(公告)日：2016-09-01
申请号：TW099112370
申请日：2010-04-20
发明人： 安村文次 , YASUMURA, BUNJI , 土屋文男 , TSUCHIYA, FUMIO , 伊東久範 , ITO, HISANORI , 井手琢二 , IDE, TAKUJI , 川邊直樹 , KAWANABE, NAOKI , 佐藤齊尚 , SATO, MASANAO
IPC分类号： H01L23/488
CPC分类号： H01L22/32 , H01L23/3114 , H01L23/49816 , H01L23/49838 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/85 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05073 , H01L2224/05553 , H01L2224/05624 , H01L2224/0613 , H01L2224/13099 , H01L2224/131 , H01L2224/16225 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48157 , H01L2224/48227 , H01L2224/4845 , H01L2224/48463 , H01L2224/48465 , H01L2224/48624 , H01L2224/49171 , H01L2224/73265 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85399 , H01L2924/00012 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01025 , H01L2924/01033 , H01L2924/0105 , H01L2924/01051 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/10253 , H01L2924/12041 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/20752 , H01L2924/20753 , H01L2924/30107 , H01L2924/3512 , H01L2924/00
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