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公开(公告)号：US20220328565A1
公开(公告)日：2022-10-13
申请号：US16646154
申请日：2020-01-16
发明人： Miao DUAN
摘要： The present disclosure provides a display panel and a manufacturing method thereof. The display panel includes a first substrate, a second substrate, a blue light emitting layer, and a single crystal perovskite color conversion layer. The single crystal perovskite color conversion layer includes red light single crystal perovskite units disposed on red subpixel areas and green light single crystal perovskite units disposed on green subpixel areas. The red light single crystal perovskite units receive blue light to emit red light, and the green light single crystal perovskite units receive blue light to emit green light.
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公开(公告)号：US11315500B2
公开(公告)日：2022-04-26
申请号：US16608494
申请日：2019-07-03
发明人： Jianfeng Xiao
摘要： A display device system circuit and a display device are provided. The display device system circuit includes a power supply, a plurality of functional circuit modules and a plurality of ground wires corresponding to the plurality of functional circuit modules, respectively. Operating current input ends of the plurality of functional circuit modules are electrically connected to a positive electrode of the power supply, respectively. An operating current output end of each of the functional circuit modules is electrically connected to a negative electrode of the power supply via a corresponding ground wire. The functional circuit modules will not be interfered with each other, avoiding causing abnormal displaying by signal coupling between the functional circuit modules.
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公开(公告)号：US11251202B2
公开(公告)日：2022-02-15
申请号：US16607191
申请日：2019-05-28
发明人： Chaode Mo
IPC分类号： H01L27/12 , G02F1/1335 , G02F1/1368 , G02F1/1362 , H01L29/49
摘要： A thin film transistor (TFT) array substrate and a display panel are provided. The TFT array substrate has a base substrate, an anti-reflection layer, and a gate electrode insulating layer. The TFT array substrate has a light-transmitting region. The anti-reflection layer is disposed on the base substrate of the light-transmitting region. The gate electrode insulating layer is disposed on the anti-reflection layer. Light refractive indexes of the base substrate, the anti-reflection layer, and the gate electrode insulating layer are increasing sequentially.
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公开(公告)号：US20210358368A1
公开(公告)日：2021-11-18
申请号：US16624401
申请日：2019-12-10
发明人： Yan Xue , Baixiang Han
IPC分类号： G09G3/20
摘要： A pixel driving circuit and a display panel provided by the present disclosure detect an actual voltage of an eighth transistor in each pixel, and determine a threshold voltage of the eighth transistor in each pixel according to the actual voltage, thereby effectively compensating the eighth transistor in each pixel to achieve the objective of improving luminous uniformity of light-emitting devices and display quality.
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公开(公告)号：US20210333671A1
公开(公告)日：2021-10-28
申请号：US16609442
申请日：2019-07-03
发明人： Xiaoli FU
IPC分类号： G02F1/1362
摘要： A display device includes a display panel and a chip-on-film connected to the display panel. The display panel includes a display area, a non-display area surrounding the display area, and a plurality of data lines interval disposed in the display area, wherein the chip-on-film includes a source driving chip and a plurality of fan-out traces, ends of the plurality of fan-out traces are connected to the source driving chip, and other ends of the plurality of fan-out traces are respectively connected to the plurality of data lines in a one-to-one correspondence. A plurality of fan-out traces form a sector-shaped area, which is equivalent to setting the fan-out area of conventional art on the chip-on-film, so that the portion of the non-display area of display panels near the chip-on-film can be made narrower to achieve an ultra-narrow bezel of the display panel.
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公开(公告)号：US20210333644A1
公开(公告)日：2021-10-28
申请号：US16608523
申请日：2019-06-06
发明人： Kecheng XIE
IPC分类号： G02F1/1337 , G02F1/1339
摘要： A manufacturing method for a display panel that includes the following steps: a first substrate manufacturing step, a second substrate manufacturing step, an assembling step, and a first alignment film layer manufacturing step. The display panel includes a first substrate, a second substrate, a liquid crystal layer, and a sealant layer. The manufacturing method for the display panel disposes a first liquid crystal alignment monomer layer on a surface of a common electrode layer, and uses a heat gun to perform heat and light treatment to a color filter substrate to make a link reaction occur between the first liquid crystal alignment monomer layer and the common electrode layer and form a first alignment film layer, and thereby undesirable alignment is improved and greyscale difference of a display panel caused by undesirable alignment is avoided to ensure yields and quality of products.
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公开(公告)号：US11145836B2
公开(公告)日：2021-10-12
申请号：US16071511
申请日：2018-05-22
发明人： Jiangjiang Song
摘要： An OLED display device and a manufacturing method for the same are provided. The OLED display device includes a substrate, an organic light-emitting layer, a first encapsulation layer, a color filter layer, and a second encapsulation layer. Wherein the organic light-emitting layer is disposed on the substrate, the first encapsulation layer covers a surface of the organic light-emitting layer, the color filter layer is disposed on the first encapsulation layer, and the second encapsulation layer covers a surface of the color filter layer. In the present invention, the first encapsulation layer functions as a substrate of the color filter layer and is encapsulated by the first encapsulation layer and the second encapsulation layer, so that the CF substrate is omitted, the thickness of the entire display device is reduced, and flexibility is achieved.
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公开(公告)号：US11114567B2
公开(公告)日：2021-09-07
申请号：US16278718
申请日：2019-02-19
发明人： Zhichao Zhou , Hui Xia
IPC分类号： H01L29/786 , H01L29/66 , H01L21/02 , H01L21/027 , H01L21/28 , H01L21/285 , H01L21/306 , H01L21/308 , H01L21/311 , H01L21/3213 , H01L21/443 , H01L21/467 , H01L21/4757 , H01L21/4763 , H01L23/31 , H01L27/12 , H01L29/49
摘要： A manufacturing method of TFT substrate and a TFT substrate are provided. The method provides a dual-gate structure symmetrically disposed on both sides of active layer, which prevents TFT threshold voltage from changing and improve TFT conduction state switching; by first manufacturing the active layer before the gate insulating layer to make the insulating layer directly grow on active layer, the contact interface between the gate insulating layer and active layer is improved, leading to further improving TFT conduction state switching. The TFT substrate makes the gate located between the source and the pixel electrode in vertical direction, and the dual-gate is symmetrically disposed on both sides of active layer to prevent TFT threshold voltage from changing and improve TFT conduction state switching, as well as improve the contact interface between the gate insulating layer and active layer, leading to further improving TFT conduction state switching.
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公开(公告)号：US11111574B2
公开(公告)日：2021-09-07
申请号：US16313004
申请日：2018-09-14
发明人： Youyuan Kuang
摘要： The invention provides a vapor deposition apparatus, comprising: a heating source, a crucible lid, a first crucible, a second crucible, a moving part, and a bracket. The first and second crucibles and moving part are disposed under the crucible lid; the first crucible is fixed on the bracket; and the first crucible and the second crucible each comprises an inner sidewall, an outer sidewall and a bottom. The crucible lid is mounted on the outer sidewall of the first crucible, the second crucible is fixed to top surface of the moving part; projection of the inner sidewall of the first crucible in vertical direction is located outside the outer sidewall of the second crucible. The density of the heating wire in the first region corresponding to the position of the crucible lid and the first crucible is greater than the density of the second region below the first region.
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公开(公告)号：US11049886B2
公开(公告)日：2021-06-29
申请号：US16684552
申请日：2019-11-14
发明人： Xiaowen Lv
摘要： A thin film transistor array substrate includes: a substrate on which a thin film transistor and a storage capacitor are formed. The storage capacitor includes a first electrode plate formed on the substrate, a gate isolation layer or an etching stopper layer formed on the first electrode plate, and a second electrode plate formed on the gate isolation layer or the etching stopper layer. The etching stopper layer may be formed on the gate isolation layer, of which one is partially etched and removed such that there is only one of the gate isolation layer and the etching stopper layer existing between the two electrode plates of the storage capacitor so as to reduce the overall thickness of the isolation layer of the storage capacitor. Thus, the capacitor occupies a smaller area and a higher aperture ratio may be achieved.
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