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公开(公告)号:US09318591B2
公开(公告)日:2016-04-19
申请号:US14006158
申请日:2012-03-22
Applicant: Andre Geim , Konstantin Novoselov , Roman Gorbachev , Leonid Ponomarenko , Liam Britnell
Inventor: Andre Geim , Konstantin Novoselov , Roman Gorbachev , Leonid Ponomarenko , Liam Britnell
IPC: H01L29/16 , H01L29/775 , H01L29/20 , H01L29/267 , H01L29/417 , H01L29/51 , H01L21/02 , H01L29/06 , H01L29/778
CPC classification number: H01L29/775 , H01L21/02104 , H01L29/06 , H01L29/1606 , H01L29/2003 , H01L29/267 , H01L29/41725 , H01L29/51 , H01L29/778
Abstract: This application relates to graphene based heterostructures and transistor devices comprising graphene. The hetero-structures comprise i) a first graphene layer; ii) a spacer layer and iii) a third graphene. The transistors comprise (i) an electrode, the electrode comprising a graphene layer, and (ii) an insulating barrier layer.
Abstract translation: 本申请涉及基于石墨烯的异质结构和包括石墨烯的晶体管器件。 异质结构包括:i)第一石墨烯层; ii)间隔层和iii)第三石墨烯。 晶体管包括(i)电极,电极包括石墨烯层,和(ii)绝缘阻挡层。
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2.
公开(公告)号:US09017474B2
公开(公告)日:2015-04-28
申请号:US13158064
申请日:2011-06-10
Applicant: Andre Geim , Rahul Raveendran-Nair , Kostya Novoselov
Inventor: Andre Geim , Rahul Raveendran-Nair , Kostya Novoselov
CPC classification number: C01B31/0484 , B82Y30/00 , B82Y40/00 , C01B32/194 , C01B2204/30
Abstract: The present invention relates to the novel material fluorographene (FG), methods of making fluorographene, and its applications in electronics and related fields. The fluorographene also finds use in improving the properties of composite materials by incorporating the fluorographene of the invention with one or more materials such as fluoropolymers (FP) and the like. Conventionally, FP inter-chain interactions are very weak but spread over the area of FG, FG is able to act as a very effective and compatible reinforcement.
Abstract translation: 本发明涉及新型材料荧光染料(FG),制备荧光素烯的方法及其在电子及相关领域的应用。 通过将本发明的荧光荧光素与一种或多种材料(例如含氟聚合物(FP)等)并入,氟荧光素也可用于改善复合材料的性能。 通常,FP互链相互作用非常弱,但是在FG的区域上扩散,FG能够作为非常有效和兼容的增强材料。
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3.
公开(公告)号:US20110303121A1
公开(公告)日:2011-12-15
申请号:US13158064
申请日:2011-06-10
Applicant: ANDRE GEIM , Rahul Raveendran-Nair , Kostya Novoselov
Inventor: ANDRE GEIM , Rahul Raveendran-Nair , Kostya Novoselov
IPC: C09D201/04 , C08K5/03 , C07C25/22
CPC classification number: C01B31/0484 , B82Y30/00 , B82Y40/00 , C01B32/194 , C01B2204/30
Abstract: The present invention relates to the novel material fluorographene (FG), methods of making fluorographene, and its applications in electronics and related fields. The fluorographene also finds use in improving the properties of composite materials by incorporating the fluorographene of the invention with one or more materials such as fluoropolymers (FP) and the like. Conventionally, FP inter-chain interactions are very weak but spread over the area of FG, FG is able to act as a very effective and compatible reinforcement.
Abstract translation: 本发明涉及新型材料荧光染料(FG),制备荧光素烯的方法及其在电子及相关领域的应用。 通过将本发明的荧光荧光素与一种或多种材料(例如含氟聚合物(FP)等)并入,氟荧光素也可用于改善复合材料的性能。 通常,FP互链相互作用非常弱,但是在FG的区域上扩散,FG能够作为非常有效和兼容的增强材料。
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公开(公告)号:US09548364B2
公开(公告)日:2017-01-17
申请号:US14005476
申请日:2012-03-22
Applicant: Andre Geim , Kostya Novoselov , Roman Gorbachev , Leonid Ponomarenko
Inventor: Andre Geim , Kostya Novoselov , Roman Gorbachev , Leonid Ponomarenko
CPC classification number: H01L29/1606 , H01L21/02527
Abstract: This application relates to graphene based heterostructures and methods of making graphene based heterostructures. The graphene heterostructures comprise: i) a first encapsulation layer; ii) a second encapsulation layer; and iii) a graphene layer. The heterostructures find application in electronic devices.
Abstract translation: 本申请涉及基于石墨烯的异质结构和制造基于石墨烯的异质结构的方法。 石墨烯异质结构包括:i)第一封装层; ii)第二封装层; 和iii)石墨烯层。 异质结构可用于电子设备。
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公开(公告)号:US20140008611A1
公开(公告)日:2014-01-09
申请号:US14005476
申请日:2012-03-22
Applicant: Andre Geim , Kostya Novoselov , Roman Gorbachev , Leonid Ponomarenko
Inventor: Andre Geim , Kostya Novoselov , Roman Gorbachev , Leonid Ponomarenko
CPC classification number: H01L29/1606 , H01L21/02527
Abstract: This application relates to graphene based heterostructures and methods of making graphene based heterostructures. The graphene heterostructures comprise: i) a first encapsulation layer; ii) a second encapsulation layer; and iii) a graphene layer. The heterostructures find application in electronic devices.
Abstract translation: 本申请涉及基于石墨烯的异质结构和制造基于石墨烯的异质结构的方法。 石墨烯异质结构包括:i)第一封装层; ii)第二封装层; 和iii)石墨烯层。 异质结构可用于电子设备。
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公开(公告)号:US20140008616A1
公开(公告)日:2014-01-09
申请号:US14006158
申请日:2012-03-22
Applicant: Andre Geim , Kostya Novoselov , Roman Gorbachev , Leonid Ponomarenko , L. Britnell
Inventor: Andre Geim , Kostya Novoselov , Roman Gorbachev , Leonid Ponomarenko , L. Britnell
IPC: H01L29/775 , H01L21/02 , H01L29/06
CPC classification number: H01L29/775 , H01L21/02104 , H01L29/06 , H01L29/1606 , H01L29/2003 , H01L29/267 , H01L29/41725 , H01L29/51 , H01L29/778
Abstract: This application relates to graphene based heterostructures and transistor devices comprising graphene. The hetero-structures comprise i) a first graphene layer; ii) a spacer layer and iii) a third graphene. The transistors comprise (i) an electrode, the electrode comprising a graphene layer, and (ii) an insulating barrier layer.
Abstract translation: 本申请涉及基于石墨烯的异质结构和包括石墨烯的晶体管器件。 异质结构包括:i)第一石墨烯层; ii)间隔层和iii)第三石墨烯。 晶体管包括(i)电极,电极包括石墨烯层,和(ii)绝缘阻挡层。
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