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公开(公告)号：US08956147B2
公开(公告)日：2015-02-17
申请号：US13301905
申请日：2011-11-22
申请人： Craig T. Dillon , Andrew R. Romano
发明人： Craig T. Dillon , Andrew R. Romano
摘要： An inner mold body includes a first pair of side walls opposite one another, each of the first pair of side walls having a pair of engagement members attached thereto, a second pair of side walls opposite one another; wherein each of the second pair of side walls is adjacent to each of the first pair of side walls, and a separation mechanism in contact with each of the second pair of side walls.
摘要翻译： 内模体包括彼此相对的第一对侧壁，第一对侧壁中的每一对具有附接到其上的一对接合构件，彼此相对的第二对侧壁; 其中所述第二对侧壁中的每一个与所述第一对侧壁中的每一个相邻，以及与所述第二对侧壁中的每一个接触的分离机构。
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公开(公告)号：US20120328781A9
公开(公告)日：2012-12-27
申请号：US12339514
申请日：2008-12-19
IPC分类号： B05D1/32
CPC分类号： H01L21/266 , G03F7/40 , H01L21/0273 , H01L21/26513
摘要： A method for implanting a dopant in a substrate is provided. A patterned photoresist mask is formed over the substrate, wherein the patterned photoresist mask has patterned photoresist mask features. A protective layer is deposited on the patterned photoresist mask by performing a cyclical deposition, wherein each cycle, comprises a depositing phase for depositing a deposition layer over surfaces of the patterned mask of photoresist material and a profile shaping phase for providing vertical sidewalls. A dopant is implanted into the substrate using an ion beam. The protective layer and photoresist mask are removed.
摘要翻译： 提供了一种用于在衬底中注入掺杂剂的方法。 图案化的光致抗蚀剂掩模形成在衬底上，其中图案化的光刻胶掩模具有图案化的光刻胶掩模特征。 通过执行循环沉积，在图案化的光致抗蚀剂掩模上沉积保护层，其中每个循环包括用于在光致抗蚀剂材料的图案化掩模的表面上沉积沉积层的沉积相和用于提供垂直侧壁的轮廓成形阶段。 使用离子束将掺杂剂注入到衬底中。 去除保护层和光刻胶掩模。
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3.发明授权Chemical gas analysis during processing of chemically amplified photoresist systems 失效在化学放大光致抗蚀剂体系处理过程中的化学气体分析
公开(公告)号：US5989763A
公开(公告)日：1999-11-23
申请号：US86320
申请日：1998-05-28
CPC分类号： G03F7/70558 , G03F7/38 , G03F7/70866
摘要： Gases evolved during photolithographic processing of chemically amplified photoresist systems are monitored to allow optimization of process parameters such as intensity and duration of applied heat or radiation. Specifically, during soft bake, evaporation of solvent gases is detected. During exposure and PEB, gases evolved during activation of the polymer resin component by the photoacid are detected. The intensity and/or duration of the heating or exposure are then varied to optimize resolution of the particular photolithography process. Residual gas analysis, diode laser spectroscopy, FT-IR spectroscopy, and electronic sensing may be utilized alone or in combination to monitor composition and/or concentration of evolved gases in accordance with the present invention.
摘要翻译： 监测在化学放大光致抗蚀剂体系的光刻处理过程中演化的气体，以优化工艺参数，例如施加的热或辐射的强度和持续时间。 具体来说，在软烘烤期间，检测出溶剂气体的蒸发。 在曝光和PEB期间，检测到在光聚合物树脂组分活化期间释放的气体。 然后改变加热或曝光的强度和/或持续时间以优化特定光刻工艺的分辨率。 根据本发明，残留气体分析，二极管激光光谱学，FT-IR光谱学和电子感测可以单独使用或组合使用以监测放出气体的组成和/或浓度。
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公开(公告)号：US08361564B2
公开(公告)日：2013-01-29
申请号：US12339514
申请日：2008-12-19
CPC分类号： H01L21/266 , G03F7/40 , H01L21/0273 , H01L21/26513
摘要： A method for implanting a dopant in a substrate is provided. A patterned photoresist mask is formed over the substrate, wherein the patterned photoresist mask has patterned photoresist mask features. A protective layer is deposited on the patterned photoresist mask by performing a cyclical deposition, wherein each cycle, comprises a depositing phase for depositing a deposition layer over surfaces of the patterned mask of photoresist material and a profile shaping phase for providing vertical sidewalls. A dopant is implanted into the substrate using an ion beam. The protective layer and photoresist mask are removed.
摘要翻译： 提供了一种用于在衬底中注入掺杂剂的方法。 图案化的光致抗蚀剂掩模形成在衬底上，其中图案化的光刻胶掩模具有图案化的光刻胶掩模特征。 通过执行循环沉积，在图案化的光致抗蚀剂掩模上沉积保护层，其中每个循环包括用于在光致抗蚀剂材料的图案化掩模的表面上沉积沉积层的沉积相和用于提供垂直侧壁的轮廓成形阶段。 使用离子束将掺杂剂注入到衬底中。 去除保护层和光刻胶掩模。
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公开(公告)号：US20130000846A1
公开(公告)日：2013-01-03
申请号：US13609192
申请日：2012-09-10
IPC分类号： H01L21/308 , C23F1/08
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/405 , H01L21/76816
摘要： An apparatus for etching an etch layer formed on a substrate is provided. A first photoresist (PR) mask with first mask features is provided on the etch layer. The apparatus performs a process for providing a protective coating on the first PR mask. The process includes at least one cycle. Each cycle includes (a) a deposition phase for depositing a deposition layer over the surface of the first mask features using a deposition gas, and (b) a profile shaping phase for shaping the profile of the deposition layer using a profile shaping gas. A liquid PR material is applied over the first PR mask having the protective coating. The PR material is patterned into a second mask features, where the first and second mask features form a second PR mask. The etch layer is etched though the second PR mask.
摘要翻译： 提供了用于蚀刻形成在基板上的蚀刻层的设备。 在蚀刻层上提供具有第一掩模特征的第一光致抗蚀剂（PR）掩模。 该装置执行在第一PR掩模上提供保护涂层的工艺。 该过程包括至少一个循环。 每个循环包括（a）用于使用沉积气体在第一掩模特征的表面上沉积沉积层的沉积阶段，以及（b）用于使用轮廓成形气体成形沉积层的轮廓的轮廓成形相。 在具有保护涂层的第一PR掩模上施加液体PR材料。 PR材料被图案化成第二掩模特征，其中第一和第二掩模特征形成第二PR掩模。 通过第二PR掩模蚀刻蚀刻层。
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公开(公告)号：US20090163035A1
公开(公告)日：2009-06-25
申请号：US12339511
申请日：2008-12-19
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01L21/31144 , G03F7/40 , H01L21/0337 , H01L21/0338 , H01L21/32139
摘要： A method for etching features into an etch layer is provided. A patterned mask is formed over the etch layer, wherein the patterned mask is of a high etch rate photoresist material, wherein the patterned mask has patterned mask features. A protective layer is deposited on the patterned mask of high etch rate photoresist material by performing a cyclical deposition, wherein each cycle, comprises a depositing phase for depositing a deposition layer over the exposed surfaces, including sidewalls of the patterned mask of high etch rate photoresist material and a profile shaping phase for providing vertical sidewalls. Features are etched into the etch layer using the protective layer as a mask. The protective layer is removed.
摘要翻译： 提供了将特征蚀刻到蚀刻层中的方法。 图案化掩模形成在蚀刻层上，其中图案化掩模是高蚀刻速率光致抗蚀剂材料，其中图案化掩模具有图案化掩模特征。 通过执行循环沉积，保护层沉积在高蚀刻速率光致抗蚀剂材料的图案化掩模上，其中每个循环包括沉积相，用于在暴露表面上沉积沉积层，包括高蚀刻速率光致抗蚀剂的图案化掩模的侧壁 材料和用于提供垂直侧壁的轮廓成形阶段。 使用保护层作为掩模将特征蚀刻到蚀刻层中。 保护层被去除。
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7.发明授权Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof 有权用顶部涂层及其材料对深紫外光致抗蚀剂进行成像的工艺公开(公告)号：US07473512B2
公开(公告)日：2009-01-06
申请号：US11044305
申请日：2005-01-27
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/11
摘要： The present invention relates to a process for imaging deep ultraviolet (uv) photoresists with a topcoat using deep uv immersion lithography. The invention further relates to a topcoat composition comprising a polymer with at least one ionizable group having a pKa ranging from about −9 to about 11. The invention also relates to a process for imaging a photoresist with a top barrier coat to prevent contamination of the photoresist from environmental contaminants.
摘要翻译： 本发明涉及一种使用深紫外浸没式光刻技术对具有顶涂层的深紫外（UV）光刻胶进行成像的方法。 本发明还涉及一种面漆组合物，其包含具有至少一个pKa在约-9至约11范围内的至少一个可离子化基团的聚合物。本发明还涉及一种使用顶部阻挡涂层对光致抗蚀剂进行成像的方法，以防止 光致抗蚀剂来自环境污染物。
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8.发明授权公开(公告)号：US07977242B2
公开(公告)日：2011-07-12
申请号：US12366113
申请日：2009-02-05
申请人： S. M. Reza Sadjadi , Lumin Li , Andrew R. Romano
发明人： S. M. Reza Sadjadi , Lumin Li , Andrew R. Romano
IPC分类号： H01L21/461 , H01L21/311
CPC分类号： H01L21/0337
摘要： A method for providing features in an etch layer is provided by forming an organic mask layer over the inorganic mask layer, forming a silicon-containing mask layer over the organic mask layer, forming a patterned mask layer over the silicon-containing mask layer, etching the silicon-containing mask layer through the patterned mask, depositing a polymer over the etched silicon-containing mask layer, depositing a silicon-containing film over the polymer, planarizing the silicon-containing film, selectively removing the polymer leaving the silicon-containing film, etching the organic layer, and etching the inorganic layer.
摘要翻译： 通过在无机掩模层上形成有机掩模层，在有机掩模层上形成含硅掩模层，在含硅掩模层上形成图案化掩模层，蚀刻，提供蚀刻层中提供特征的方法 通过图案化掩模的含硅掩模层，在蚀刻的含硅掩模层上沉积聚合物，在聚合物上沉积含硅膜，平坦化含硅膜，选择性地除去离开含硅膜的聚合物 蚀刻有机层，并蚀刻无机层。
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9.发明授权公开(公告)号：US07816071B2
公开(公告)日：2010-10-19
申请号：US11338462
申请日：2006-01-24
申请人： David J. Abdallah , Mark O. Neisser , Ralph R. Dammel , Georg Pawlowski , John Biafore , Andrew R. Romano
发明人： David J. Abdallah , Mark O. Neisser , Ralph R. Dammel , Georg Pawlowski , John Biafore , Andrew R. Romano
IPC分类号： G03F7/00
CPC分类号： G03F7/091 , Y10S430/151
摘要： A process for imaging a photoresist comprising the steps of, a) forming a stack of multiple layers of organic antireflective coatings on a substrate; b) forming a coating of a photoresist over the upper layer of the stack of multiple layers of organic antireflective coatings; c) imagewise exposing the photoresist with an exposure equipment; and, d) developing the coating with a developer.
摘要翻译： 一种用于对光致抗蚀剂进行成像的方法，包括以下步骤：a）在衬底上形成多层有机抗反射涂层的叠层; b）在多层有机抗反射涂层的堆叠的上层上形成光致抗蚀剂的涂层; c）用曝光设备成像曝光光致抗蚀剂; 和d）用显影剂显影涂层。
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公开(公告)号：US08282847B2
公开(公告)日：2012-10-09
申请号：US12338947
申请日：2008-12-18
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/311
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/405 , H01L21/76816
摘要： A method for etching an etch layer formed on a substrate is provided. A first photoresist (PR) mask with first mask features is provided on the etch layer. A protective coating is provided on the first PR mask by a process including at least one cycle. Each cycle includes (a) a deposition phase for depositing a deposition layer over the surface of the first mask features using a deposition gas, and (b) a profile shaping phase for shaping the profile of the deposition layer using a profile shaping gas. A liquid PR material is applied over the first PR mask having the protective coating. The PR material is patterned into a second mask features, where the first and second mask features form a second PR mask. The etch layer is etched though the second PR mask.
摘要翻译： 提供蚀刻形成在基板上的蚀刻层的方法。 在蚀刻层上提供具有第一掩模特征的第一光致抗蚀剂（PR）掩模。 通过包括至少一个循环的工艺在第一PR掩模上提供保护涂层。 每个循环包括（a）用于使用沉积气体在第一掩模特征的表面上沉积沉积层的沉积阶段，以及（b）用于使用轮廓成形气体成形沉积层的轮廓的轮廓成形相。 在具有保护涂层的第一PR掩模上施加液体PR材料。 PR材料被图案化成第二掩模特征，其中第一和第二掩模特征形成第二PR掩模。 通过第二PR掩模蚀刻蚀刻层。
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