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    Method for forming solder bumps of increased height
    1.
    发明申请
    Method for forming solder bumps of increased height 有权
    形成增加高度的焊料凸块的方法

    公开(公告)号：US20060105560A1

    公开(公告)日：2006-05-18

    申请号：US10988528

    申请日：2004-11-16

    申请人： Li-Hsin Tseng ,  Gil Huang ,  Huei-Mei Yu ,  Chia-Jen Cheng ,  Ken Sun ,  Chien-Tung Yu ,  Blenny Chang ,  Chih Chan ,  Jian-Wen Luo ,  Owen Chen

    发明人： Li-Hsin Tseng ,  Gil Huang ,  Huei-Mei Yu ,  Chia-Jen Cheng ,  Ken Sun ,  Chien-Tung Yu ,  Blenny Chang ,  Chih Chan ,  Jian-Wen Luo ,  Owen Chen

    IPC分类号： H01L21/44

    CPC分类号： H01L24/11 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/13099 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2224/05552 ,  H01L2924/00014 ,  H01L2924/013

    摘要： A method for forming solder bumps (or solder balls after reflow) of improved height and reliability is provided. In one embodiment, a semiconductor substrate having at least one contact pad and an upper passivation layer having at least one opening formed therein exposing a portion of the contact pad is provided. A layer of under bump metal (UBM) is formed above the passivation layer and the contact pad. A first patterned and etched photoresist layer is provided above the UBM layer, the first patterned and etched photoresist layer defining at least one first opening therein. A second patterned and etched photoresist layer is provided above the first patterned and etched photoresist layer, the second patterned and etched photoresist layer defining at least one second opening therein, the second opening being wider than the first opening. A solder material is filled in the at least one first opening and substantially filled in the at least one second opening. The first and second photoresist layers are removed and the solder material is reflown to create a solder ball of increased height.

    摘要翻译： 提供了一种改善高度和可靠性的形成焊料凸块（或回流焊球）的方法。 在一个实施例中，提供了具有至少一个接触焊盘和具有形成在其中的至少一个开口的上钝化层的半导体衬底，其暴露接触焊盘的一部分。 在钝化层和接触垫之上形成一层下凸块金属（UBM）。 第一图案化和蚀刻的光致抗蚀剂层设置在UBM层上方，第一图案化和蚀刻光刻胶层在其中限定至少一个第一开口。 第二图案化和蚀刻光刻胶层设置在第一图案化和蚀刻光刻胶层的上方，第二图案化和蚀刻光刻胶层在其中限定至少一个第二开口，第二开口比第一开口更宽。 焊料材料填充在至少一个第一开口中并且基本上填充在至少一个第二开口中。 去除第一和第二光致抗蚀剂层，并且焊料材料被重新喷射以产生增加的高度的焊球。

    Cavity structure for semiconductor structures
    3.
    发明申请
    Cavity structure for semiconductor structures 有权
    半导体结构的腔结构

    公开(公告)号：US20060213804A1

    公开(公告)日：2006-09-28

    申请号：US11166454

    申请日：2005-06-24

    申请人： Hsiu-Mei Yu ,  Gil Huang ,  Chien-Tung Yu ,  Owen Chen

    发明人： Hsiu-Mei Yu ,  Gil Huang ,  Chien-Tung Yu ,  Owen Chen

    IPC分类号： B65D85/00

    CPC分类号： H01L27/14618 ,  H01L27/14632 ,  H01L27/14687 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for providing a cavity structure on a semiconductor device is provided. The method of forming the cavity structure, which may be particularly useful in packaging an image sensor, includes forming a spacer layer over a substrate. The spacer layer may be formed from a photo-sensitive material which may be patterned using photolithography techniques to form cavity walls surrounding dies on the wafer. A packaging layer, such as a substantially transparent layer, may be placed directly upon the cavity walls prior to curing. In another embodiment, the cavity walls are cured, an adhesive is applied to a surface of the cavity walls, and the packaging layer placed upon the adhesive. Thereafter, the wafer may be diced and the individual dies may be packaged for use.

    摘要翻译： 提供了一种在半导体器件上提供空腔结构的方法。 在封装图像传感器中特别有用的形成腔结构的方法包括在衬底上形成间隔层。 间隔层可以由感光材料形成，光敏材料可以使用光刻技术进行图案化以在晶片上形成周围的模具的空腔壁。 包装层，例如基本上透明的层，可以在固化之前直接放置在空腔壁上。 在另一个实施例中，空腔壁被固化，将粘合剂施加到空腔壁的表面，并且将包装层放置在粘合剂上。 此后，可以对晶片进行切割，并且可以将各个管芯封装使用。

    Cavity structure for semiconductor structures
    4.
    发明授权
    Cavity structure for semiconductor structures 有权
    半导体结构的腔结构

    公开(公告)号：US07378724B2

    公开(公告)日：2008-05-27

    申请号：US11166454

    申请日：2005-06-24

    申请人： Hsiu-Mei Yu ,  Gil Huang ,  Chien-Tung Yu ,  Owen Chen

    发明人： Hsiu-Mei Yu ,  Gil Huang ,  Chien-Tung Yu ,  Owen Chen

    IPC分类号： H01L23/02

    CPC分类号： H01L27/14618 ,  H01L27/14632 ,  H01L27/14687 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for providing a cavity structure on a semiconductor device is provided. The method of forming the cavity structure, which may be particularly useful in packaging an image sensor, includes forming a spacer layer over a substrate. The spacer layer may be formed from a photo-sensitive material which may be patterned using photolithography techniques to form cavity walls surrounding dies on the wafer. A packaging layer, such as a substantially transparent layer, may be placed directly upon the cavity walls prior to curing. In another embodiment, the cavity walls are cured, an adhesive is applied to a surface of the cavity walls, and the packaging layer placed upon the adhesive. Thereafter, the wafer may be diced and the individual dies may be packaged for use.

    摘要翻译： 提供了一种在半导体器件上提供空腔结构的方法。 在封装图像传感器中特别有用的形成腔结构的方法包括在衬底上形成间隔层。 间隔层可以由感光材料形成，光敏材料可以使用光刻技术进行图案化以在晶片上形成周围的模具的空腔壁。 包装层，例如基本上透明的层，可以在固化之前直接放置在空腔壁上。 在另一个实施例中，空腔壁被固化，将粘合剂施加到空腔壁的表面，并且将包装层放置在粘合剂上。 此后，可以对晶片进行切割，并且可以将各个管芯封装使用。