公开(公告)号：US08878220B2

公开(公告)日：2014-11-04

申请号：US13209765

申请日：2011-08-15

申请人： Jeong Hee Yang ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang Hyun Oh ,  Duk Il Suh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong

发明人： Jeong Hee Yang ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang Hyun Oh ,  Duk Il Suh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/20 ,  H01L33/42

CPC分类号： H01L33/385 ,  H01L33/20 ,  H01L33/38 ,  H01L33/42 ,  H01L2933/0091

摘要： Exemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arranged on the substrate. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including a concave portion and a convex portion is arranged on the second conductivity-type semiconductor layer. A first electrode pad contacts an upper surface of the first conductivity-type semiconductor layer and is located near a center of the first side edge. Two second electrode pads are located near opposite distal ends of the second side edge to supply electric current to the second conductivity-type semiconductor layer. A first pad extension extends from the first electrode pad and a second pad extension extends from each of the two second electrode pads.

摘要翻译： 本发明的示例性实施例涉及发光二极管。 根据本发明的示例性实施例的发光二极管包括具有第一侧边缘和第二侧边缘的基板和布置在基板上的发光结构。 发光结构包括第一导电型半导体层，有源层和第二导电型半导体层。 在第二导电型半导体层上配置有包含凹部和凸部的透明电极层。 第一电极焊盘接触第一导电类型半导体层的上表面并且位于第一侧边缘的中心附近。 两个第二电极焊盘位于第二侧边缘的相对的远端附近，以向第二导电类型半导体层提供电流。 第一焊盘延伸部从第一电极焊盘延伸，并且第二焊盘延伸部从两个第二电极焊盘中的每一个延伸。

公开(公告)号：US08373188B2

公开(公告)日：2013-02-12

申请号：US13100879

申请日：2011-05-04

申请人： Duk Il Suh ,  Jae Moo Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang Hyun Oh ,  Jin Woong Lee

发明人： Duk Il Suh ,  Jae Moo Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang Hyun Oh ,  Jin Woong Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/46 ,  H01L33/10 ,  H01L33/38 ,  H01L33/42 ,  H01L33/50 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Exemplary embodiments of the present invention provide light-emitting diodes having a distributed Bragg reflector. A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range. The first distributed Bragg reflector has a laminate structure having an alternately stacked SiO2 layer and Nb2O5 layer.

摘要翻译： 本发明的示例性实施例提供了具有分布式布拉格反射器的发光二极管。 根据示例性实施例的发光二极管（LED）包括布置在基板的第一表面上的发光结构，所述发光结构包括第一导电类型半导体层，第二导电类型半导体层， 以及插入在第一导电型半导体层和第二导电型半导体层之间的有源层。 第一分布式布拉格反射器布置在基板的与第一表面相对的第二表面上，第一分布布拉格反射器用于反射从发光结构发射的光。 第一分布布拉格反射器相对于蓝色波长范围内的第一波长的光，绿色波长范围内的第二波长的光和红色波长范围内的第三波长的光具有至少90％的反射率。 第一分布布拉格反射器具有层叠结构，其具有交替层叠的SiO 2层和Nb 2 O 5层。

公开(公告)号：US20120049223A1

公开(公告)日：2012-03-01

申请号：US13209765

申请日：2011-08-15

申请人： Jeong Hee YANG ,  Kyoung Wan KIM ,  Yeo Jin YOON ,  Ye Seul KIM ,  Sang Hyun OH ,  Duk Il SUH ,  Keum Ju LEE ,  Jin Woong LEE ,  Da Yeon JEONG

发明人： Jeong Hee YANG ,  Kyoung Wan KIM ,  Yeo Jin YOON ,  Ye Seul KIM ,  Sang Hyun OH ,  Duk Il SUH ,  Keum Ju LEE ,  Jin Woong LEE ,  Da Yeon JEONG

IPC分类号： H01L33/58 ,  H01L33/42

CPC分类号： H01L33/385 ,  H01L33/20 ,  H01L33/38 ,  H01L33/42 ,  H01L2933/0091

摘要： Exemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arranged on the substrate. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including a concave portion and a convex portion is arranged on the second conductivity-type semiconductor layer. A first electrode pad contacts an upper surface of the first conductivity-type semiconductor layer and is located near a center of the first side edge. Two second electrode pads are located near opposite distal ends of the second side edge to supply electric current to the second conductivity-type semiconductor layer. A first pad extension extends from the first electrode pad and a second pad extension extends from each of the two second electrode pads.

摘要翻译： 本发明的示例性实施例涉及发光二极管。 根据本发明的示例性实施例的发光二极管包括具有第一侧边缘和第二侧边缘的基板和布置在基板上的发光结构。 发光结构包括第一导电型半导体层，有源层和第二导电型半导体层。 在第二导电型半导体层上配置有包含凹部和凸部的透明电极层。 第一电极焊盘接触第一导电类型半导体层的上表面并且位于第一侧边缘的中心附近。 两个第二电极焊盘位于第二侧边缘的相对的远端附近，以向第二导电类型半导体层提供电流。 第一焊盘延伸部从第一电极焊盘延伸，并且第二焊盘延伸部从两个第二电极焊盘中的每一个延伸。

公开(公告)号：US20120025244A1

公开(公告)日：2012-02-02

申请号：US13100879

申请日：2011-05-04

申请人： Duk Il SUH ,  Jae Moo KIM ,  Kyoung Wan KIM ,  Yeo Jin YOON ,  Ye Seul KIM ,  Sang Hyun OH ,  Jin Woong LEE

发明人： Duk Il SUH ,  Jae Moo KIM ,  Kyoung Wan KIM ,  Yeo Jin YOON ,  Ye Seul KIM ,  Sang Hyun OH ,  Jin Woong LEE

IPC分类号： H01L33/58

CPC分类号： H01L33/46 ,  H01L33/10 ,  H01L33/38 ,  H01L33/42 ,  H01L33/50 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Exemplary embodiments of the present invention provide light-emitting diodes having a distributed Bragg reflector. A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range. The first distributed Bragg reflector has a laminate structure having an alternately stacked SiO2 layer and Nb2O5 layer.

摘要翻译： 本发明的示例性实施例提供了具有分布式布拉格反射器的发光二极管。 根据示例性实施例的发光二极管（LED）包括布置在基板的第一表面上的发光结构，所述发光结构包括第一导电类型半导体层，第二导电类型半导体层， 以及插入在第一导电型半导体层和第二导电型半导体层之间的有源层。 第一分布式布拉格反射器布置在基板的与第一表面相对的第二表面上，第一分布布拉格反射器用于反射从发光结构发射的光。 第一分布布拉格反射器相对于蓝色波长范围内的第一波长的光，绿色波长范围内的第二波长的光和红色波长范围内的第三波长的光具有至少90％的反射率。 第一分布布拉格反射器具有层叠结构，其具有交替层叠的SiO 2层和Nb 2 O 5层。