Thin film transistor panel and manufacturing method thereof
    1.
    发明授权
    Thin film transistor panel and manufacturing method thereof 有权
    薄膜晶体管面板及其制造方法

    公开(公告)号:US07582501B2

    公开(公告)日:2009-09-01

    申请号:US11724982

    申请日:2007-03-15

    CPC分类号: H01L27/124

    摘要: A TFT array panel having signal lines of low resistivity is presented. The TFT array panel includes a substrate; a gate line including a gate electrode formed on the substrate and having a single-layered structure; a gate insulating layer formed on the gate line; a semiconductor layer formed on the gate insulating layer; a barrier layer formed on the semiconductor layer and including nitrogen; a data line including a source electrode formed on the barrier layer and having a single-layered structure; a drain electrode formed on the barrier layer, spaced apart from the source electrode and having a single-layered structure; and a pixel electrode electrically connected to the drain electrode. The TFT array panel may include contact holes extending to the end portions of the gate line, the data line, and the drain electrode, and molybdenum or molybdenum alloy buffer members in the contact holes.

    摘要翻译: 提出了具有低电阻率信号线的TFT阵列面板。 TFT阵列面板包括基板; 栅线,包括形成在所述基板上并具有单层结构的栅电极; 栅极绝缘层,形成在栅极线上; 形成在所述栅极绝缘层上的半导体层; 形成在所述半导体层上并包含氮的阻挡层; 数据线,包括形成在所述阻挡层上并具有单层结构的源电极; 漏电极,形成在阻挡层上,与源电极间隔开并具有单层结构; 以及电连接到漏电极的像素电极。 TFT阵列面板可以包括延伸到栅极线,数据线和漏电极的端部的接触孔,以及接触孔中的钼或钼合金缓冲构件。

    Thin film transistor substrate and display device having electrode plates on storage capacitors
    2.
    发明授权
    Thin film transistor substrate and display device having electrode plates on storage capacitors 有权
    薄膜晶体管基板和在存储电容器上具有电极板的显示装置

    公开(公告)号:US07968881B2

    公开(公告)日:2011-06-28

    申请号:US11945067

    申请日:2007-11-26

    摘要: The invention relates to a thin film transistor substrate and a display device including the same, and provides a thin film transistor substrate and a display device including the same, which can prevent damage of elements due to static electricity by forming, in each unit pixel region where a pair of first and second pixel electrodes, a pair of first and second drain electrode plates that are connected to the first and second pixel electrodes and to connected to drain terminals of thin film transistors, and can obtain a dot inversion driving effect through line inversion driving by connecting the first drain electrode in one pixel region to the first drain electrode plate, connecting the second drain electrode in the one unit pixel region to the second drain electrode plate, connecting a first drain electrode in another unit pixel region neighboring the one unit pixel region to the second drain electrode plate, and connecting a second drain electrode in another unit pixel region to the first drain electrode plate.

    摘要翻译: 本发明涉及一种薄膜晶体管基板和包括该薄膜晶体管基板的显示装置,并且提供一种薄膜晶体管基板及包括该薄膜晶体管基板的显示装置,其能够通过在每个单位像素区域中形成来防止由静电引起的元件的损坏 其中一对第一和第二像素电极,一对第一和第二漏极电极板,其连接到第一和第二像素电极并连接到薄膜晶体管的漏极端子,并且可以通过线路获得点反转驱动效应 通过将一个像素区域中的第一漏电极连接到第一漏电极板,将一个单位像素区域中的第二漏电极连接到第二漏极电极板,将第一漏电极连接在与该一个像素区域相邻的另一单位像素区域中的第一漏电极 单元像素区域连接到第二漏电极板,并且将另一单位像素区域中的第二漏电极连接到第二漏电极板 e第一个漏电极板。

    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE THEREFOR
    3.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE THEREFOR 有权
    薄膜晶体管基板及其显示装置

    公开(公告)号:US20080210940A1

    公开(公告)日:2008-09-04

    申请号:US11945067

    申请日:2007-11-26

    IPC分类号: H01L27/12 H01L21/84

    摘要: The invention relates to a thin film transistor substrate and a display device including the same, and provides a thin film transistor substrate and a display device including the same, which can prevent damage of elements due to static electricity by forming, in each unit pixel region where a pair of first and second pixel electrodes, a pair of first and second drain electrode plates that are connected to the first and second pixel electrodes and to connected to drain terminals of thin film transistors, and can obtain a dot inversion driving effect through line inversion driving by connecting the first drain electrode in one pixel region to the first drain electrode plate, connecting the second drain electrode in the one unit pixel region to the second drain electrode plate, connecting a first drain electrode in another unit pixel region neighboring the one unit pixel region to the second drain electrode plate, and connecting a second drain electrode in another unit pixel region to the first drain electrode plate.

    摘要翻译: 本发明涉及一种薄膜晶体管基板和包括该薄膜晶体管基板的显示装置,并且提供一种薄膜晶体管基板及包括该薄膜晶体管基板的显示装置,其能够通过在每个单位像素区域中形成来防止由静电引起的元件的损坏 其中一对第一和第二像素电极,一对第一和第二漏极电极板,其连接到第一和第二像素电极并连接到薄膜晶体管的漏极端子,并且可以通过线路获得点反转驱动效应 通过将一个像素区域中的第一漏电极连接到第一漏电极板,将一个单位像素区域中的第二漏电极连接到第二漏极电极板,将第一漏电极连接在与该一个像素区域相邻的另一单位像素区域中的第一漏电极 单元像素区域连接到第二漏电极板,并且将另一单位像素区域中的第二漏电极连接到第二漏电极板 e第一个漏电极板。

    TFT array panel
    4.
    发明授权
    TFT array panel 失效
    TFT阵列面板

    公开(公告)号:US07511302B2

    公开(公告)日:2009-03-31

    申请号:US11049742

    申请日:2005-02-04

    IPC分类号: H01L27/14

    摘要: Multi-layered wiring for a larger flat panel display is formed by depositing molybdenum on a substrate in presence of a precursor gas containing at least one oxygen, nitrogen and carbon to form a molybdenum layer. An aluminum layer is deposited on the molybdenum layer. Another metal layer may be formed on the aluminum layer. The molybdenum layer has a face-centered cubic (FCC) lattice structure with a preferred orientation of (111).

    摘要翻译: 在含有至少一个氧,氮和碳的前体气体的存在下,在基板上沉积钼以形成钼层,形成用于较大平板显示器的多层布线。 铝层沉积在钼层上。 可以在铝层上形成另一金属层。 钼层具有面心立方(FCC)晶格结构,其优选取向为(111)。

    Thin film transistor panel and manufacturing method thereof
    5.
    发明申请
    Thin film transistor panel and manufacturing method thereof 有权
    薄膜晶体管面板及其制造方法

    公开(公告)号:US20070215876A1

    公开(公告)日:2007-09-20

    申请号:US11724982

    申请日:2007-03-15

    IPC分类号: H01L29/04

    CPC分类号: H01L27/124

    摘要: A TFT array panel having signal lines of low resistivity is presented. The TFT array panel includes a substrate; a gate line including a gate electrode formed on the substrate and having a single-layered structure; a gate insulating layer formed on the gate line; a semiconductor layer formed on the gate insulating layer; a barrier layer formed on the semiconductor layer and including nitrogen; a data line including a source electrode formed on the barrier layer and having a single-layered structure; a drain electrode formed on the barrier layer, spaced apart from the source electrode and having a single-layered structure; and a pixel electrode electrically connected to the drain electrode. The TFT array panel may include contact holes extending to the end portions of the gate line, the data line, and the drain electrode, and molybdenum or molybdenum alloy buffer members in the contact holes.

    摘要翻译: 提出了具有低电阻率信号线的TFT阵列面板。 TFT阵列面板包括基板; 栅线,包括形成在所述基板上并具有单层结构的栅电极; 栅极绝缘层,形成在栅极线上; 形成在所述栅极绝缘层上的半导体层; 形成在所述半导体层上并包含氮的阻挡层; 数据线,包括形成在所述阻挡层上并具有单层结构的源电极; 漏电极,形成在阻挡层上,与源电极间隔开并具有单层结构; 以及电连接到漏电极的像素电极。 TFT阵列面板可以包括延伸到栅极线,数据线和漏电极的端部的接触孔,以及接触孔中的钼或钼合金缓冲构件。

    Method of manufacturing a TFT array panel
    6.
    发明授权
    Method of manufacturing a TFT array panel 有权
    制造TFT阵列面板的方法

    公开(公告)号:US07998786B2

    公开(公告)日:2011-08-16

    申请号:US12369839

    申请日:2009-02-12

    IPC分类号: H01L21/00

    摘要: Multi-layered wiring for a larger flat panel display is formed by depositing molybdenum on a substrate in presence of a precursor gas containing at least one oxygen, nitrogen and carbon to form a molybdenum layer. An aluminum layer is deposited on the molybdenum layer. Another metal layer may be formed on the aluminum layer. The molybdenum layer has a face-centered cubic (FCC) lattice structure with a preferred orientation of (111).

    摘要翻译: 在含有至少一个氧,氮和碳的前体气体的存在下,在基板上沉积钼以形成钼层,形成用于较大平板显示器的多层布线。 铝层沉积在钼层上。 可以在铝层上形成另一金属层。 钼层具有面心立方(FCC)晶格结构,其优选取向为(111)。

    TFT ARRAY PANEL
    7.
    发明申请
    TFT ARRAY PANEL 有权
    TFT阵列面板

    公开(公告)号:US20090163022A1

    公开(公告)日:2009-06-25

    申请号:US12369839

    申请日:2009-02-12

    IPC分类号: H01L21/4763

    摘要: Multi-layered wiring for a larger flat panel display is formed by depositing molybdenum on a substrate in presence of a precursor gas containing at least one oxygen, nitrogen and carbon to form a molybdenum layer. An aluminum layer is deposited on the molybdenum layer. Another metal layer may be formed on the aluminum layer. The molybdenum layer has a face-centered cubic (FCC) lattice structure with a preferred orientation of (111).

    摘要翻译: 在含有至少一个氧,氮和碳的前体气体的存在下,在基板上沉积钼以形成钼层,形成用于较大平板显示器的多层布线。 铝层沉积在钼层上。 可以在铝层上形成另一金属层。 钼层具有面心立方(FCC)晶格结构,其优选取向为(111)。

    Substrate treating apparatus and substrate treating method using the same
    8.
    发明申请
    Substrate treating apparatus and substrate treating method using the same 审中-公开
    基板处理装置及使用其的基板处理方法

    公开(公告)号:US20060163207A1

    公开(公告)日:2006-07-27

    申请号:US11184357

    申请日:2005-07-18

    CPC分类号: H01L21/6708 B05B13/0221

    摘要: Disclosed is a substrate treating apparatus including a treatment solution dispenser supplying a treatment solution on a substrate, a transporting unit transporting the substrate, and a controller controlling the transporting unit so that the substrate is transported in an inclined position. The substrate is inclined sideways through a rotation with respect to an axis extending parallel to a transportation direction of the substrate. The rotation may be made in both directions in an alternating manner. The apparatus is useful for treating the substrate uniformly regardless of substrate size.

    摘要翻译: 公开了一种基板处理装置,其包括在基板上供给处理溶液的处理液分配器,输送基板的输送单元和控制输送单元的控制器,使得基板在倾斜位置被输送。 基板相对于平行于基板的输送方向延伸的轴线的旋转侧向倾斜。 旋转可以以交替的方式在两个方向上进行。 该设备可用于均匀地处理衬底,而与衬底尺寸无关。