公开(公告)号：US07125521B2

公开(公告)日：2006-10-24

申请号：US10831894

申请日：2004-04-26

Applicant: Chung-Long Chang ,  Jui-Cheng Lo ,  Shang-Ting Tsai ,  Yu-Liang Lin

Inventor： Chung-Long Chang ,  Jui-Cheng Lo ,  Shang-Ting Tsai ,  Yu-Liang Lin

IPC: B01L3/02 ,  G01N1/10 ,  G01N1/32

CPC classification number: H01L21/31111 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084

Abstract: A method of unblinding an alignment mark comprising the following steps. A substrate having a cell area and an alignment mark within an alignment area is provided. An STI trench is formed into the substrate within the cell area. A silicon oxide layer is formed over the substrate, filling the STI trench and the alignment mark. The silicon oxide layer is planarized to form a planarized STI within the STI trench and leaving silicon oxide within the alignment mark to form a blinded alignment mark. A wet chemical etchant is applied within the alignment mark area over the blinded alignment mark to at least partially remove the silicon oxide within the alignment mark. The remaining silicon oxide is removed from within the blinded alignment mark to unblind the alignment mark. A drop etcher apparatus is also disclosed.

Abstract translation: 一种解开对准标记的方法，包括以下步骤。 提供了在对准区域内具有单元区域和对准标记的基板。 在沟槽区内形成STI沟槽。 在衬底上形成氧化硅层，填充STI沟槽和对准标记。 将氧化硅层平坦化以在STI沟槽内形成平坦化的STI，并使对准标记内的氧化硅形成盲目的对准标记。 湿法化学蚀刻剂施加在对准标记区域内的盲目对准标记上，以至少部分地去除对准标记内的氧化硅。 剩余的氧化硅从盲目的对准标记中移除，以对准对准标记。 还公开了一种滴蚀蚀刻装置。

公开(公告)号：US06860723B2

公开(公告)日：2005-03-01

申请号：US10264404

申请日：2002-10-09

Applicant: Ben-Shu Chen ,  Chao-Jung Chang ,  Jui-Cheng Lo ,  Chin-Hsin Peng ,  Chien-Kuo Lu

Inventor： Ben-Shu Chen ,  Chao-Jung Chang ,  Jui-Cheng Lo ,  Chin-Hsin Peng ,  Chien-Kuo Lu

IPC: F04B49/20 ,  F04B49/00

CPC classification number: F04B49/20 ,  F04B2205/09

Abstract: A system for controlling and monitoring a rate of flow of a fluid, such as a CMP slurry, comprising a pump for pumping the slurry; a flow meter for monitoring the rate of flow of the slurry; and a controller operably connected to the flow meter and the pump. The controller receives signals from the flow meter indicating the rate of flow of the slurry and controls the operational speed of the pump responsive to the flow meter signals. A degasser equipped with a level sensor may be further provided in the system for removing gas bubbles from the slurry.

Abstract translation: 一种用于控制和监测诸如CMP浆料的流体流速的系统，包括用于泵送浆料的泵; 用于监测浆料流速的流量计; 以及可操作地连接到流量计和泵的控制器。 控制器从流量计接收指示泥浆流量的信号，并根据流量计信号控制泵的操作速度。 可以在系统中进一步设置装备有液位传感器的脱气机，以从浆料中除去气泡。

公开(公告)号：US5667630A

公开(公告)日：1997-09-16

申请号：US430468

申请日：1995-04-28

Applicant: Jui-Cheng Lo

Inventor： Jui-Cheng Lo

IPC: H01L21/3213 ,  H01L21/00

CPC classification number: H01L21/32136

Abstract: A method for forming metal patterns through use of a multi-step magnetically assisted reactive ion etch plasma process. A metal layer is formed upon a semiconductor substrate. The metal layer is patterned with a photoresist composition which leaves exposed those regions of metal to be removed. The exposed metal is removed through a multi-step magnetically assisted reactive ion etch process. The first etch step is a primary metal etch at elevated levels of radio frequency power and magnetic field strength. The last etch step is a secondary metal over-etch step at lower levels of radio frequency power and magnetic field strength. Intermediate to the first etch step and last etch step are a multiplicity of etch process steps where the radio frequency power and magnetic field strength are independently and sequentially reduced.

Abstract translation: 一种通过使用多级磁辅助反应离子蚀刻等离子体工艺形成金属图案的方法。 在半导体基板上形成金属层。 用光致抗蚀剂组合物对金属层进行图案化，所述光致抗蚀剂组合物暴露出要去除的金属区域。 通过多步磁辅助反应离子蚀刻工艺去除暴露的金属。 第一蚀刻步骤是在升高的射频功率和磁场强度水平下的主要金属蚀刻。 最后的蚀刻步骤是在较低的射频功率和磁场强度水平下的次级金属过蚀刻步骤。 中间到第一蚀刻步骤和最后蚀刻步骤是多个蚀刻工艺步骤，其中射频功率和磁场强度被独立且顺序地减少。

公开(公告)号：US20050202763A1

公开(公告)日：2005-09-15

申请号：US10797315

申请日：2004-03-09

Applicant: Ping-Hsu Chen ,  Chao-Jung Chang ,  Jui-Cheng Lo ,  Yu-Liang Lin ,  Shang-Ting Tsai ,  Ping Chuang

Inventor： Ping-Hsu Chen ,  Chao-Jung Chang ,  Jui-Cheng Lo ,  Yu-Liang Lin ,  Shang-Ting Tsai ,  Ping Chuang

IPC: B24B1/00

CPC classification number: B24B57/02 ,  B24B37/044

Abstract: A method and system for delivering a mixed slurry for use chemical mechanical polishing operation. A first slurry may be mixed with a second slurry to provide a mixed slurry thereof. A flow rate and a mixing ratio associated with the mixed slurry can be controlled to provide an accurate flow rate control and adjustable mixing ratio thereof. The first slurry and the second slurry may be mixed in-line utilizing an in-line mixing mechanism to provide a mixed slurry thereof. Alternatively, the first and second slurries may be pre-mixed utilizing a pre-mixing mechanism to provide a mixed slurry there.

Abstract translation: 一种用于输送用于化学机械抛光操作的混合浆料的方法和系统。 可以将第一浆料与第二浆料混合以提供其混合浆料。 可以控制与混合浆料相关的流速和混合比，以提供精确的流速控制和可调混合比。 可以使用在线混合机构将第一浆料和第二浆料在线混合以提供其混合浆料。 或者，第一和第二浆料可以使用预混合机构预混合以在其中提供混合浆料。

公开(公告)号：US06926584B2

公开(公告)日：2005-08-09

申请号：US10267614

申请日：2002-10-09

Applicant: Chao-Jung Chang ,  Ping-Hsu Chen ,  Chin-Hsin Peng ,  Jui-Cheng Lo ,  Chien-Kuo Lu ,  Chien-Ling Huang

Inventor： Chao-Jung Chang ,  Ping-Hsu Chen ,  Chin-Hsin Peng ,  Jui-Cheng Lo ,  Chien-Kuo Lu ,  Chien-Ling Huang

IPC: B24B37/04 ,  B24B57/02 ,  B24B49/00

CPC classification number: B24B37/04 ,  B24B57/02

Abstract: A DMHC (dual mode hybrid control) system and method which facilitates enhanced control in the delivery of polishing slurry to a CMP (chemical mechanical polishing) apparatus. The DMHC comprises a linear table and a PID (proportional integrated differential) controller operably connected to a slurry pump provided in a slurry flow conduit which delivers the polishing slurry to the CMP apparatus. A bubble trap and a flowmeter provided in the slurry flow conduit downstream of the slurry pump are operably connected to the PID controller, and the CMP apparatus is located downstream of the flowmeter.

Abstract translation: 一种DMHC（双模式混合控制）系统和方法，其有助于增强抛光浆料输送到CMP（化学机械抛光）装置中的控制。 DMHC包括线性工作台和可操作地连接到浆料泵的PID（比例积分微分）控制器，所述浆料泵设置在将抛光浆料输送到CMP设备的浆料流动管道中。 设置在泥浆泵下游的泥浆流动管道中的气泡阱和流量计可操作地连接到PID控制器，并且CMP设备位于流量计的下游。

公开(公告)号：US5726102A

公开(公告)日：1998-03-10

申请号：US661257

申请日：1996-06-10

Applicant: Jui-Cheng Lo

Inventor： Jui-Cheng Lo

IPC: H01L21/027 ,  H01L21/00

CPC classification number: H01L21/0275

Abstract: A method for controlling the plasma etch bias of a patterned layer formed through plasma etching of a blanket layer formed beneath a patterned photoresist layer. There is first formed upon a semiconductor substrate a blanket layer. Formed upon the blanket layer is a patterned photoresist layer. The patterned photoresist layer is then treated through a pre-treatment method to form with a controlled degradation and a controlled flow a hardened patterned photoresist layer from the patterned photoresist layer. The hardened patterned photoresist layer is hardened against a further flow in a subsequent plasma etch method which is employed in etching the patterned layer from the blanket layer while employing the hardened patterned photoresist layer as an etch mask. Finally, the blanket layer is etched through the subsequent plasma etch method to form the patterned layer while employing the hardened patterned photoresist layer as the etch mask.

Abstract translation: 一种用于控制通过等离子体蚀刻形成在图案化光致抗蚀剂层下方的覆盖层形成的图案层的等离子体蚀刻偏压的方法。 首先在半导体衬底上形成覆盖层。 形成在覆盖层上的是图案化的光致抗蚀剂层。 然后通过预处理方法处理图案化的光致抗蚀剂层，以形成来自图案化光致抗蚀剂层的硬化图案化光致抗蚀剂层的受控降解和受控流程。 在随后的等离子体蚀刻方法中硬化图案化的光致抗蚀剂层被硬化，其用于在使用硬化的图案化光致抗蚀剂层作为蚀刻掩模的同时从橡皮布层蚀刻图案层。 最后，通过随后的等离子体蚀刻方法蚀刻覆盖层以形成图案化层，同时使用硬化的图案化光致抗蚀剂层作为蚀刻掩模。