Method of erasing a flash memory
    1.
    发明授权
    Method of erasing a flash memory 有权
    擦除闪存的方法

    公开(公告)号:US5991206A

    公开(公告)日:1999-11-23

    申请号:US207228

    申请日:1998-12-08

    申请人: Kye Wan Shin

    发明人: Kye Wan Shin

    摘要: This invention discloses a method of erasing a flash memory, in which the method comprises: (A) erasing all cells of a selected sector; (B) verifying in cells whether the cells are erased; (C) saving an address corresponding to a non-erased cell and re-erasing the cells when the non-erased cell is detected by the step (B); (D) verifying in cells, from the saved address to the final address whether the cells are erased; and (E) executing a slight-program for recovering over-erased cells so that the cells of the sector are normally erased.

    摘要翻译: 本发明公开了一种擦除闪速存储器的方法,其中该方法包括:(A)擦除选定扇区的所有单元; (B)在细胞中验证细胞是否被擦除; (C)保存对应于未擦除单元的地址,并且当通过步骤(B)检测到未被擦除的单元时,重新擦除单元; (D)在单元格中验证从保存的地址到最终地址是否擦除单元; 和(E)执行用于恢复过擦除的单元的轻微程序,使得扇区的单元通常被擦除。

    Word line voltage regulation circuit
    2.
    发明授权
    Word line voltage regulation circuit 有权
    字线电压调节电路

    公开(公告)号:US06377496B1

    公开(公告)日:2002-04-23

    申请号:US09722490

    申请日:2000-11-28

    IPC分类号: G11C700

    CPC分类号: G11C16/30 G11C8/08 G11C16/08

    摘要: A word line voltage regulation circuit includes a first comparator for comparing a first reference voltage and the potential of an output node; a first switching element for supplying the supply voltage to the output node depending on the output signal of the first comparator; a second comparator for comparing a second reference voltage and the potential of the output node; a second switching element for regulating the potential of the output node depending on the output signal of the second comparator; a third switching element for transmitting the potential of the output node to a decoder circuit depending on a first control signal; and a fourth switching element for supplying the supply voltage to the decoder circuit depending on a second control signal.

    摘要翻译: 字线电压调节电路包括用于比较第一参考电压和输出节点的电位的第一比较器; 第一开关元件,用于根据第一比较器的输出信号将输出电压提供给输出节点; 用于比较第二参考电压和输出节点的电位的第二比较器; 第二开关元件,用于根据第二比较器的输出信号调节输出节点的电位; 第三开关元件,用于根据第一控制信号将输出节点的电位传输到解码器电路; 以及第四开关元件,用于根据第二控制信号向解码器电路提供电源电压。

    Method of pre-programming a flash memory cell
    3.
    发明授权
    Method of pre-programming a flash memory cell 失效
    对闪存单元进行预编程的方法

    公开(公告)号:US6076138A

    公开(公告)日:2000-06-13

    申请号:US998952

    申请日:1997-12-29

    申请人: Kye Wan Shin

    发明人: Kye Wan Shin

    摘要: (The present invention discloses) a method of pre-programming a flash memory cell. According to the present invention, it makes it possible to execute a continuous programming by performing a pre-programming step of internal algorithms with a bulk program verification step not with a byte or word pre-programming step when an erasure operation of a flash memory cell using a stack gate cell is performed.

    摘要翻译: (本发明公开)一种对闪存单元进行预编程的方法。 根据本发明,通过在闪速存储器单元的擦除操作时,通过执行不具有字节或字预编程步骤的批量程序验证步骤的内部算法的预编程步骤,可以执行连续编程 使用堆栈门单元。