Abstract:
Disclosed herein is an inertial sensor. The inertial sensor 100 according to preferred embodiments of the present invention includes: a membrane 110; a mass body 120 disposed under the membrane 110; a piezoelectric body 130 formed on the membrane 110 to drive the mass body 120; and trenches 140 formed by being collapsed in a thickness direction of the piezoelectric body 130 so as to vertically meet a direction in which the mass body 120 is driven. By this configuration, the trenches are formed by being collapsed in a thickness direction of the piezoelectric body 130 to provide directivity while retaining the rigidity of the piezoelectric body 130 to prevent a wave from being propagated in an unnecessary direction, thereby driving the inertial sensor 100 in a desired specific direction.
Abstract:
A method of forming a piezoelectric actuator on a vibration plate to provide a driving force to each of a plurality of pressure chambers includes forming a lower electrode on the vibration plate, forming a piezoelectric layer on the lower electrode at a position corresponding to each of the pressure chambers, forming a supporting pad on the lower electrode, the supporting pad contacting one end of the piezoelectric layer and extending away from the one end of the piezoelectric layer, forming an upper electrode extending from a top surface of the piezoelectric layer to a top surface of the supporting pad, and bonding the upper electrode to a driving circuit above the supporting pad to receive a voltage from the driving circuit.
Abstract:
A method to form a thick layer by screen printing and a method to form a piezoelectric actuator of an inkjet head. The method to form the thick layer including forming a guide groove in a surface to a predetermined depth, and forming the thick layer by applying a material to the surface inside the guide groove through screen printing. The method to form the piezoelectric actuator including forming an insulating layer on a top surface of a vibration plate and forming a guide groove in the top surface of the vibration plate or an insulating layer to a predetermined depth at a position corresponding to each of a plurality of pressure chambers, forming a lower electrode on the top surface of the insulating layer; forming a piezoelectric layer inside the guide groove by screen printing, and forming an upper electrode on a top surface of the piezoelectric layer.
Abstract:
A method to form a thick layer by screen printing and a method to form a piezoelectric actuator of an inkjet head. The method to form the thick layer including forming a guide groove in a surface to a predetermined depth, and forming the thick layer by applying a material to the surface inside the guide groove through screen printing. The method to form the piezoelectric actuator including forming an insulating layer on a top surface of a vibration plate and forming a guide groove in the top surface of the vibration plate or an insulating layer to a predetermined depth at a position corresponding to each of a plurality of pressure chambers, forming a lower electrode on the top surface of the insulating layer; forming a piezoelectric layer inside the guide groove by screen printing, and forming an upper electrode on a top surface of the piezoelectric layer.
Abstract:
A piezoelectric actuator of an inkjet head and a method of forming the piezoelectric actuator. The piezoelectric actuator is formed on a vibration plate to provide a driving force to each of a plurality of pressure chambers. The piezoelectric actuator includes a lower electrode formed on the vibration plate, a piezoelectric layer formed on the lower electrode at a position corresponding to each of the pressure chambers, a supporting pad formed on the lower electrode, the supporting pad contacting one end of the piezoelectric layer and extending away from the one end of the piezoelectric layer, and an upper electrode extending from a top surface of the piezoelectric layer to a top surface of the supporting pad. The upper electrode is bonded to a driving circuit above the supporting pad to receive a voltage from the driving circuit. The piezoelectric layer may have substantially the same length as the pressure chamber. The supporting pad may be formed of a photosensitive polymer and may have substantially the same height as the piezoelectric layer. The upper electrode may include a first portion formed on the piezoelectric layer and a second portion formed on the supporting pad, and the second portion may be wider than the first portion.
Abstract:
A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.
Abstract:
A method of forming a piezoelectric actuator of an inkjet head formed on a vibrating plate to provide a driving power for ejecting ink to each of pressure chambers is provided. The method includes forming a lower electrode on a vibrating plate, forming a piezoelectric layer on the lower electrode to be located above each of pressure chambers, forming a protecting layer covering the lower electrode and the piezoelectric layer, exposing an upper surface of the piezoelectric layer by decreasing a thickness of the protecting layer and the piezoelectric layer, forming an upper electrode on the upper surface of the piezoelectric layer, removing the protecting layer. According to the present invention, since the piezoelectric layer having a flat upper surface is formed in uniform figure, area and thickness of the upper electrode formed thereon is uniformly controlled.
Abstract:
Provided is a nonvolatile memory device and a method of manufacturing the same. The nonvolatile memory device includes a semiconductor substrate on which a source, a drain, and a channel region are formed, a tunneling oxide film formed on the channel region, a floating gate formed of a fullerene material on the tunneling oxide, a blocking oxide film formed on the floating gate, and a gate electrode formed on the blocking oxide film.
Abstract:
Provided is a pyrolysis furnace having a gas flowing path controller with an improved structure. The pyrolysis furnace includes: a silicon substrate; a main body of the pyrolysis furnace; a heating unit that is formed around the main body and controls the temperature of the main body; at least one gas supplying tube through which a gas flows into the main body; and a gas flowing path controller that is installed inside the main body and controls the flow of the gas. As a result, controlling and manufacturing of small-sized nanoparticles with excellent characteristics is possible.
Abstract:
Disclosed herein are an inertial sensor and a method of manufacturing the same. The inertial sensor 100 according to a preferred embodiment of the present invention includes a membrane 110, a piezoelectric body 120 formed in a multilayer above the membrane 110, a first electrode 130 formed between the membrane 110 and the piezoelectric body 120, a second electrode 140 formed on an exposed surface of the piezoelectric body 120, and a third electrode 150 formed between layers of the piezoelectric body 120 formed in a multilayer.