公开(公告)号：US20080213936A1

公开(公告)日：2008-09-04

申请号：US12009982

申请日：2008-01-23

申请人： Tetsuya Hatai

发明人： Tetsuya Hatai

IPC分类号： H01L31/00 ,  H01L21/425

CPC分类号： H01L27/14683 ,  H01L21/67282 ,  H01L22/34 ,  H01L27/148 ,  H01L2924/0002 ,  H01L2924/00

摘要： An alignment mark forming method according to the present invention includes: an alignment mark forming step of using an impurity implantation region as an alignment target layer and using, as a mask, the same resist film used for forming the impurity implantation region to form an alignment mark that is used when a patterning is performed in at least one of a subsequent impurity implantation step and a subsequent process layer forming step.

摘要翻译： 根据本发明的对准标记形成方法包括：使用杂质注入区域作为取向对象层并使用用于形成杂质注入区域的相同抗蚀剂膜作为掩模的对准标记形成步骤，以形成对准 在后续杂质注入步骤和随后的工艺层形成步骤中的至少一个中执行图案化时使用的标记。

公开(公告)号：US20070064211A1

公开(公告)日：2007-03-22

申请号：US11502771

申请日：2006-08-11

申请人： Tetsuya Hatai

发明人： Tetsuya Hatai

IPC分类号： G03B27/52

CPC分类号： G03F7/70633

摘要： An exposure operation evaluation method for an exposure apparatus for arranging a predetermined number of at least one evaluation pattern in an overlapping area and printing the at least one evaluation pattern on a substrate when performing a plurality of exposures and printing on the substrate while sequentially step-moving an exposure area in quadrangle, the exposure area having evaluation patterns arranged on an outer peripheral side of a circuit pattern, the overlapping area overlapping respective exposure areas adjacent to four sides of the exposure area, the method including: measuring a printing misalignment between each evaluation pattern of adjacent exposure areas printed on the substrate; and calculating a plurality of linear components in an exposure operation of the exposure apparatus based on the result of the measurement of the printing misalignment and suppressing and controlling the printing misalignment based on the plurality of linear components.

摘要翻译： 一种用于曝光装置的曝光操作评估方法，用于在重叠区域中布置预定数量的至少一个评估图案，并且当在基板上进行多次曝光和印刷时，将所述至少一个评估图案印刷在基板上， 移动曝光区域为四角形，所述曝光区域具有布置在电路图案的外周侧的评估图案，所述重叠区域与所述曝光区域的四边相邻的各曝光区域重叠，所述方法包括：测量每个所述曝光区域之间的打印未对准 印刷在基板上的相邻曝光区域的评价图案; 以及基于所述打印未对准的测量结果，在所述曝光装置的曝光操作中计算多个线性分量，并且基于所述多个线性分量来抑制和控制所述打印未对准。

公开(公告)号：US07704652B2

公开(公告)日：2010-04-27

申请号：US11502771

申请日：2006-08-11

申请人： Tetsuya Hatai

发明人： Tetsuya Hatai

IPC分类号： G03F9/00

CPC分类号： G03F7/70633

摘要： An exposure operation evaluation method for an exposure apparatus for arranging a predetermined number of at least one evaluation pattern in an overlapping area and printing the at least one evaluation pattern on a substrate when performing a plurality of exposures and printing on the substrate while sequentially step-moving an exposure area in quadrangle, the exposure area having evaluation patterns arranged on an outer peripheral side of a circuit pattern, the overlapping area overlapping respective exposure areas adjacent to four sides of the exposure area, the method including: measuring a printing misalignment between each evaluation pattern of adjacent exposure areas printed on the substrate; and calculating a plurality of linear components in an exposure operation of the exposure apparatus based on the result of the measurement of the printing misalignment and suppressing and controlling the printing misalignment based on the plurality of linear components.

摘要翻译： 一种用于曝光装置的曝光操作评估方法，用于在重叠区域中布置预定数量的至少一个评估图案，并且当在基板上进行多次曝光和印刷时，将所述至少一个评估图案印刷在基板上， 移动曝光区域为四角形，所述曝光区域具有布置在电路图案的外周侧的评估图案，所述重叠区域与所述曝光区域的四边相邻的各曝光区域重叠，所述方法包括：测量每个所述曝光区域之间的打印未对准 印刷在基板上的相邻曝光区域的评价图案; 以及基于所述打印未对准的测量结果，在所述曝光装置的曝光操作中计算多个线性分量，并且基于所述多个线性分量来抑制和控制所述打印未对准。

公开(公告)号：US07867810B2

公开(公告)日：2011-01-11

申请号：US12384938

申请日：2009-04-10

申请人： Tetsuya Hatai

发明人： Tetsuya Hatai

IPC分类号： H01L21/00

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  H01L27/14689 ,  H01L27/14806 ,  H01L29/66946

摘要： A method for manufacturing a solid-state image capturing apparatus including a pixel array constituted of a plurality of pixels, is provided, where each of the plurality of pixels includes a photoelectric conversion section, the method comprising the steps of: forming an impurity diffusion area in a surface area of a semiconductor substrate; and forming a plurality of different impurity diffusion areas in the surface area of the semiconductor substrate, other than the impurity diffusion area constituting the photoelectric conversion section.

摘要翻译： 提供一种制造包括由多个像素构成的像素阵列的固体摄像装置的方法，其中，所述多个像素中的每一个包括光电转换部，所述方法包括以下步骤：形成杂质扩散区域 在半导体衬底的表面积中; 以及在构成光电转换部的杂质扩散区域以外，在半导体衬底的表面区域中形成多个不同的杂质扩散区域。

公开(公告)号：US6103428A

公开(公告)日：2000-08-15

申请号：US042711

申请日：1998-03-17

申请人： Tetsuya Hatai ,  Hiroki Tabuchi ,  Masashi Inoue

发明人： Tetsuya Hatai ,  Hiroki Tabuchi ,  Masashi Inoue

IPC分类号： G03F1/29 ,  G03F1/36 ,  G03F1/44 ,  G03F7/20 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F7/70425 ,  G03F1/36

摘要： A photomask for use in manufacturing a semiconductor includes a chrome pattern serving as a mask pattern. The chrome pattern is formed so as to have a size substantially equivalent to a wavelength of an exposure light at an interval substantially equivalent to the wavelength. The chrome pattern includes a band-shaped first chrome pattern and a second chrome pattern having a side in the widthwise direction substantially orthogonal to the side in the lengthwise direction of the first chrome pattern. Then, auxiliary patterns of a size of not more than the wavelength of the exposure light, which have a function of reducing the exposure light or shifting the phase of the exposure light, are formed at both corners of the side of the second chrome pattern so as to partially overlap the second chrome pattern. When forming a resist pattern of a size substantially equivalent to the wavelength of the exposure light or a resist pattern at an interval substantially equivalent to the wavelength of the exposure light, the described photomask suppresses the backward shift of the corner of the first resist pattern corresponding to the auxiliary patterns as well as the deformation of the second resist pattern positioned apart from the corner by a distance substantially equivalent to the wavelength of the exposure light.

摘要翻译： 用于制造半导体的光掩模包括用作掩模图案的铬图案。 铬图案形成为具有与基本上等于波长的间隔基本上等于曝光光的波长的尺寸。 铬图案包括带状第一铬图案和第二镀铬图案，其具有在宽度方向上与第一镀铬图案的长度方向上的侧面大致正交的一侧。 然后，在第二镀铬图案的侧面的两个角部形成具有减少曝光光或曝光光的相位移动功能的曝光用光的波长以下的尺寸的辅助图案， 以部分地重叠第二铬图案。 当以基本上等于曝光光的波长的间隔形成基本上等于曝光光的波长或抗蚀剂图案的尺寸的抗蚀剂图案时，所描述的光掩模抑制了对应于第一抗蚀剂图案的拐角的向后偏移 辅助图案以及远离角落的距离基本上等于曝光光的波长的距离的第二抗蚀剂图案的变形。

公开(公告)号：US20090258456A1

公开(公告)日：2009-10-15

申请号：US12384938

申请日：2009-04-10

申请人： Tetsuya Hatai

发明人： Tetsuya Hatai

IPC分类号： H01L21/265 ,  H01L31/18

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  H01L27/14689 ,  H01L27/14806 ,  H01L29/66946

摘要： A method for manufacturing a solid-state image capturing apparatus including a pixel array constituted of a plurality of pixels, is provided, where each of the plurality of pixels includes a photoelectric conversion section, the method comprising the steps of: forming an impurity diffusion area in a surface area of a semiconductor substrate; and forming a plurality of different impurity diffusion areas in the surface area of the semiconductor substrate, other than the impurity diffusion area constituting the photoelectric conversion section.

摘要翻译： 提供一种制造包括由多个像素构成的像素阵列的固体摄像装置的方法，其中，所述多个像素中的每一个包括光电转换部，所述方法包括以下步骤：形成杂质扩散区域 在半导体衬底的表面积中; 以及在构成光电转换部的杂质扩散区域以外，在半导体衬底的表面区域中形成多个不同的杂质扩散区域。