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    Photomask utilizing auxiliary pattern that is not transferred with the resist pattern
    1.
    发明授权
    Photomask utilizing auxiliary pattern that is not transferred with the resist pattern 失效
    使用不与抗蚀剂图案一起转移的辅助图案的光掩模

    公开(公告)号：US6103428A

    公开(公告)日：2000-08-15

    申请号：US042711

    申请日：1998-03-17

    申请人： Tetsuya Hatai ,  Hiroki Tabuchi ,  Masashi Inoue

    发明人： Tetsuya Hatai ,  Hiroki Tabuchi ,  Masashi Inoue

    IPC分类号： G03F1/29 ,  G03F1/36 ,  G03F1/44 ,  G03F7/20 ,  H01L21/027 ,  G03F9/00

    CPC分类号： G03F7/70425 ,  G03F1/36

    摘要： A photomask for use in manufacturing a semiconductor includes a chrome pattern serving as a mask pattern. The chrome pattern is formed so as to have a size substantially equivalent to a wavelength of an exposure light at an interval substantially equivalent to the wavelength. The chrome pattern includes a band-shaped first chrome pattern and a second chrome pattern having a side in the widthwise direction substantially orthogonal to the side in the lengthwise direction of the first chrome pattern. Then, auxiliary patterns of a size of not more than the wavelength of the exposure light, which have a function of reducing the exposure light or shifting the phase of the exposure light, are formed at both corners of the side of the second chrome pattern so as to partially overlap the second chrome pattern. When forming a resist pattern of a size substantially equivalent to the wavelength of the exposure light or a resist pattern at an interval substantially equivalent to the wavelength of the exposure light, the described photomask suppresses the backward shift of the corner of the first resist pattern corresponding to the auxiliary patterns as well as the deformation of the second resist pattern positioned apart from the corner by a distance substantially equivalent to the wavelength of the exposure light.

    摘要翻译： 用于制造半导体的光掩模包括用作掩模图案的铬图案。 铬图案形成为具有与基本上等于波长的间隔基本上等于曝光光的波长的尺寸。 铬图案包括带状第一铬图案和第二镀铬图案，其具有在宽度方向上与第一镀铬图案的长度方向上的侧面大致正交的一侧。 然后，在第二镀铬图案的侧面的两个角部形成具有减少曝光光或曝光光的相位移动功能的曝光用光的波长以下的尺寸的辅助图案， 以部分地重叠第二铬图案。 当以基本上等于曝光光的波长的间隔形成基本上等于曝光光的波长或抗蚀剂图案的尺寸的抗蚀剂图案时，所描述的光掩模抑制了对应于第一抗蚀剂图案的拐角的向后偏移 辅助图案以及远离角落的距离基本上等于曝光光的波长的距离的第二抗蚀剂图案的变形。

    Method for forming a fine resist pattern
    3.
    发明授权
    Method for forming a fine resist pattern 失效
    形成精细抗蚀剂图案的方法

    公开(公告)号：US5480047A

    公开(公告)日：1996-01-02

    申请号：US242082

    申请日：1994-05-12

    申请人： Makoto Tanigawa ,  Hiroki Tabuchi ,  Takayuki Taniguchi

    发明人： Makoto Tanigawa ,  Hiroki Tabuchi ,  Takayuki Taniguchi

    IPC分类号： G03F1/00 ,  G03F7/09 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  B44C1/22

    CPC分类号： G03F1/32 ,  G03F1/26 ,  G03F7/094 ,  G03F7/2022

    摘要： A method for forming a fine resist pattern by exposing comprising the steps of: (i) forming a resist layer on a semiconductor substrate; (ii) forming a phase shifting pattern in an upper portion of the resist layer, the phase-sifting pattern having a tapered edge corresponding to a portion to which formation of an objective fine resist pattern is not desired; (iii) exposing the entire surface of the semiconductor substrate including the phase-shifting pattern; and (iv) forming a fine resist pattern below an outline except for the tapered edge of the phase-shifting pattern.

    摘要翻译： 通过曝光形成精细抗蚀剂图案的方法包括以下步骤：（i）在半导体衬底上形成抗蚀剂层; （ii）在抗蚀剂层的上部形成相移图案，所述相移图案具有对应于不希望形成目标精细抗蚀剂图案的部分的锥形边缘; （iii）使包括所述移相图案的半导体衬底的整个表面曝光; 和（iv）在除了移相图案的锥形边缘之外的轮廓下形成精细抗蚀剂图案。

    Lithographic process for producing small mask apertures and products thereof
    5.
    发明授权
    Lithographic process for producing small mask apertures and products thereof 失效
    用于生产小掩模孔的光刻工艺及其产品

    公开(公告)号：US5403685A

    公开(公告)日：1995-04-04

    申请号：US954505

    申请日：1992-09-29

    申请人： David A. Vidusek ,  Hiroki Tabuchi

    发明人： David A. Vidusek ,  Hiroki Tabuchi

    IPC分类号： G03F1/26 ,  G03F7/00 ,  H01L21/027 ,  G03F9/00

    CPC分类号： H01L21/0274 ,  G03F7/0035 ,  G03F1/26

    摘要： Sub-micron features are defined photo-lithographically by combining phase-shifting techniques with conventional photo lithographic techniques. In a first step, phase-shifting edges are defined in a photoresist layer. Dark-bands develop at the phase-shifting edges due to wavefront interference of an illuminating radiation in a subsequent exposure step. Development leaves behind sub-micron sections of photoresist which were covered by the dark-band regions. The dark-band sections are hardened and overcoated with a new layer of photoresist. A second pattern is projected onto the second layer of photoresist using conventional techniques. The second pattern is developed so as to create features having dimensions reduced by parts of the dark-band sections previously developed.

    摘要翻译： 亚微米特征通过将相移技术与常规照相光刻技术组合而光刻地定义。 在第一步骤中，相移边缘被限定在光致抗蚀剂层中。 由于随后的曝光步骤中的照明辐射的波前干扰，在相移边缘处产生暗带。 发展留下了被黑带区域覆盖的光致抗蚀剂的亚微米部分。 暗带部分被硬化并用新的光致抗蚀剂层覆盖。 使用常规技术将第二图案投影到第二层光致抗蚀剂上。 第二种图案被开发，以便产生具有由先前开发的暗带部分的尺寸减小的特征。

    Mask for photolithography
    6.
    发明授权
    Mask for photolithography 失效
    光刻掩模

    公开(公告)号：US5389474A

    公开(公告)日：1995-02-14

    申请号：US47056

    申请日：1993-04-12

    申请人： Katsuji Iguchi ,  Takashi Fukushima ,  Hiroki Tabuchi

    发明人： Katsuji Iguchi ,  Takashi Fukushima ,  Hiroki Tabuchi

    IPC分类号： G03F1/28 ,  G03F1/34 ,  G03F1/68 ,  H01L21/027 ,  H01L21/30 ,  G03F9/00

    CPC分类号： G03F1/29

    摘要： A mask for photolithography having a transparent substrate which allows light having a predetermined wavelength to pass therethrough; an opaque pattern provided on said substrate for inhibiting the light from passing therethrough; and a stepped portion provided adjacent to said opaque pattern on said substrate and having an inclined area, said stepped portion being transparent for allowing the light to pass therethrough, which can be used in a photolithographic system in fabrication of semiconductor devices and the like.

    摘要翻译： 一种用于光刻的掩模，具有允许具有预定波长的光通过的透明基板; 设置在所述基板上的用于抑制光通过的不透明图案; 以及设置在所述基板上与所述不透明图案相邻并且具有倾斜区域的阶梯部分，所述台阶部分是透明的，以允许光线通过，可用于制造半导体器件等的光刻系统中。

    Sensor
    9.
    发明授权
    Sensor 失效
    传感器

    公开(公告)号：US4928513A

    公开(公告)日：1990-05-29

    申请号：US78741

    申请日：1987-07-28

    申请人： Takashi Sugihara ,  Kazutaka Uda ,  Hiroki Tabuchi ,  Yasuhiko Inami ,  Masaya Hijikigawa ,  Shoei Kataoka

    发明人： Takashi Sugihara ,  Kazutaka Uda ,  Hiroki Tabuchi ,  Yasuhiko Inami ,  Masaya Hijikigawa ,  Shoei Kataoka

    IPC分类号： G01N27/12 ,  G01N33/00

    CPC分类号： G01N27/12 ,  G01N33/0031 ,  H01L2924/0002

    摘要： A sensor having a pair of sensor units, one of which is a detecting sensor unit and the other of which is a reference sensor unit, wherein each of the units comprises a substrate with a hollow portion, a thin insulating layer with a bridge, cantilever or diaphragm shape disposed on the substrate, a sensitive film disposed on the bridge, cantilever or diaphragm portion of the thin insulating layer, and a pair of electrodes being in contact with the sensitive film, the sensitive film section of the detecting sensor unit being exposed to an atmosphere to be measured so that the electrical resistance of the sensitive film changes with a variation in the physical quantity of the atmosphere to be detected, and the sensitive film section of the reference sensor unit being sealed within a shielding container so that the electrical resistance of the sensitive film is not influenced by a variation in the physical quantity of the atmosphere outside of the container, whereby the absolute physical quantity of the atmosphere to be detected is determined by the output power of the sensor based on a difference between the electrical resistance of the detecting sensor unit and the electrical resistance of the reference sensor unit.

    摘要翻译： 一种传感器，具有一对传感器单元，其中一个是检测传感器单元，另一个是参考传感器单元，其中每个单元包括具有中空部分的基板，具有桥的薄绝缘层，悬臂 或隔膜形状，设置在薄壁绝缘层的桥，悬臂或隔膜部分上的敏感膜和与敏感膜接触的一对电极，检测传感器单元的敏感膜部分露出 使得测量的气氛使得敏感膜的电阻随着要检测的气氛的物理量的变化而变化，并且参考传感器单元的敏感膜部分被密封在屏蔽容器内，使得电气 敏感膜的电阻不受容器外部大气物理量的变化的影响，由此绝对物理 基于检测传感器单元的电阻与基准传感器单元的电阻之差，由传感器的输出功率确定要检测的气氛量。