公开(公告)号：US20070254413A1

公开(公告)日：2007-11-01

申请号：US11412034

申请日：2006-04-26

申请人： Christopher Parks ,  John McCarten ,  Joseph Summa

发明人： Christopher Parks ,  John McCarten ,  Joseph Summa

IPC分类号： H01L21/339 ,  H01L21/338

CPC分类号： H01L29/76833 ,  H01L27/14831 ,  H01L29/66946

摘要： A method of forming a charge-coupled device including the steps of forming well or substrate of a first conductivity type; a buried channel of a second conductivity type; a plurality of first gate electrodes; partially coating the first gate electrodes with a mask substantially aligned to an edge of the first gate electrodes; implanting ions of the first conductivity type of sufficient energy to penetrate the first gates and into the buried channel; and a plurality of second gate electrodes covering regions each over the buried channel between the first gate electrodes.

摘要翻译： 一种形成电荷耦合器件的方法，包括形成第一导电类型的阱或衬底的步骤; 第二导电类型的埋置通道; 多个第一栅电极; 用基本上与第一栅电极的边缘对齐的掩模部分地涂覆第一栅电极; 注入第一导电类型的足够能量的离子以穿透第一栅极并进入掩埋沟道; 以及多个第二栅电极，覆盖在第一栅电极之间的掩埋沟道上的各个区域。

公开(公告)号：US06963093B2

公开(公告)日：2005-11-08

申请号：US10625302

申请日：2003-07-22

申请人： Tohru Yamada

发明人： Tohru Yamada

IPC分类号： H01L27/146 ,  H01L21/339 ,  H01L27/148 ,  H04N5/335 ,  H04N5/357 ,  H04N5/369 ,  H04N5/3728

CPC分类号： H01L29/66946 ,  H01L27/14812

摘要： A solid-state imaging device includes a plurality of vertical charge transferring portions, and a horizontal charge transferring portion connected to at least one end of each of the vertical charge transferring portions. A vertical transfer channel region of a first conductivity, an element isolating region of a second conductivity and a vertical well region of the second conductivity that constitute the vertical charge transferring portion are extended up to the connection portion between the vertical charge transferring portions and the horizontal charge transferring portion, and the end portions of the extended regions of the vertical transfer channel region of the first conductivity and the vertical well region of the second conductivity on the side of the horizontal charge transferring portion are positioned more on the side of the horizontal charge transferring portion than the end portion of the final vertical transfer electrode on the side of the horizontal charge transferring portion, and are positioned within 1.5 μm from the end portion of the element isolating region of the second conductivity on the side of the horizontal charge transferring portion.

摘要翻译： 固态成像装置包括多个垂直电荷转移部分和连接到每个垂直电荷转移部分的至少一端的水平电荷转移部分。 构成垂直电荷转移部分的第一导电性的垂直传输沟道区，第二导电性的元件隔离区和第二导电的垂直阱区延伸到垂直电荷转移部和水平面之间的连接部分 电荷转移部分，并且在水平电荷转移部分侧的第一导电率的垂直传输沟道区域的延伸区域和第二导电性的垂直阱区域的端部位于水平电荷的一侧 位于水平电荷转移部分侧的最终垂直转移电极的端部，并且位于水平电荷转移部分侧的第二导电性元件隔离区的端部的1.5μm以内 。

公开(公告)号：US20040259280A1

公开(公告)日：2004-12-23

申请号：US10889157

申请日：2004-07-12

申请人： Sony Corporation

发明人： Junji Yamane ,  Kunihiko Hikichi

IPC分类号： H01L021/00

CPC分类号： H01L29/76891 ,  H01L27/14683 ,  H01L27/14812 ,  H01L27/14831 ,  H01L27/14843 ,  H01L29/66946 ,  H01L29/76866

摘要： A method of fabricating a solid-state image pickup device comprising forming mask patterns corresponding to patterns of first and third transfer electrodes, which are to be alternately arranged in each vertical transfer register formation region and which are to extend in parallel to each other between light receiving portions adjacent to each other in the vertical direction, on a first electrode material layer. The method also includes forming side walls on each of the mask patterns. The method further includes patterning the first electrode material layer via the mask patterns having the side walls, to form first and third transfer electrodes formed by the first layer. The method yet further includes forming second transfer electrodes by a second electrode material layer via an insulating film in such a manner that each of said second transfer electrodes is disposed between the first and third transfer electrodes of the first layer in said vertical transfer register formation region and between the light receiving portions. The method still further includes forming fourth transfer electrodes by a third electrode material layer via an insulating film in such a manner that each of the fourth transfer electrodes is between the third and first transfer electrodes of the first layer in the vertical transfer register formation region and between the light receiving portions.

摘要翻译： 一种制造固态图像拾取装置的方法，包括形成对应于第一和第三转印电极的图案的掩模图案，所述掩模图案将交替布置在每个垂直传送寄存器形成区域中并且在光之间彼此平行延伸 在第一电极材料层上在垂直方向上彼此相邻的接收部分。 该方法还包括在每个掩模图案上形成侧壁。 该方法还包括通过具有侧壁的掩模图案来图案化第一电极材料层，以形成由第一层形成的第一和第三转移电极。 该方法还包括通过绝缘膜通过第二电极材料层形成第二转移电极，使得所述第二转移电极中的每一个设置在所述垂直转移寄存器形成区域中的第一层的第一和第三转移电极之间 并且在光接收部分之间。 该方法还包括通过绝缘膜通过第三电极材料层形成第四转移电极，使得第四转移电极中的每一个在垂直转移寄存器形成区域中位于第一层的第三和第一转移电极之间，以及 在光接收部分之间。

公开(公告)号：US5202286A

公开(公告)日：1993-04-13

申请号：US745229

申请日：1991-08-14

申请人： Mitsunori Nakatani

发明人： Mitsunori Nakatani

IPC分类号： H01L21/027 ,  H01L21/285 ,  H01L21/338 ,  H01L21/339 ,  H01L21/76 ,  H01L21/762 ,  H01L21/768

CPC分类号： H01L29/66863 ,  H01L21/0272 ,  H01L21/28587 ,  H01L21/7605 ,  H01L21/76224 ,  H01L21/7688 ,  H01L29/66946 ,  Y10S148/10 ,  Y10S438/944 ,  Y10S438/951

摘要： A method of producing a three-dimensional feature on a substrate and adjacent electrically insulating films comprising producing a resist on a portion of a surface of a substrate; etching the substrate to remove portions of the substrate not covered by the resist, leaving an etched surface on part of the substrate, and producing a three-dimensional feature having side walls intersecting the etched surface of the substrate underlying and undercutting the resist so that the resist includes overhanging portions spaced from the etched surface of the substrate, the three-dimensional feature having a height between the resist and the etched surface of the substrate; depositing, in a chemical vapor deposition process at a relatively low temperature, a discontinuous electrically insulating film to a thickness no greater than the height of the three-dimensional feature in a first segment on the resist and in a second segment, discontinuous from the first segment, on the etched surface of the substrate adjacent the three-dimensional feature, including on the etched surface of the substrate between the etched surface of the substrate and the overhanging portions of the resist; and lifting off the resist and the first segment of the insulating film disposed on the resist to produce a flattened surface including the second segment of the insulating film and the three-dimensional feature.

摘要翻译： 一种在基板和相邻的电绝缘膜上产生三维特征的方法，包括在基板表面的一部分上产生抗蚀剂; 蚀刻衬底以去除未被抗蚀剂覆盖的衬底的部分，在衬底的一部分上留下蚀刻表面，并产生具有与衬底的蚀刻表面相交的侧壁的三维特征，并使抗蚀剂底切，使得 抗蚀剂包括与衬底的蚀刻表面间隔开的突出部分，三维特征具有抗蚀剂和衬底的蚀刻表面之间的高度; 在相对较低温度的化学气相沉积工艺中将不连续的电绝缘膜沉积到不大于抗蚀剂和第二段中的第一段中的三维特征的高度的厚度，该第二段与第一段不连续 在衬底的蚀刻表面上邻近三维特征，包括在衬底的被蚀刻表面和抗蚀剂的突出部分之间的衬底的蚀刻表面上; 并且提起设置在抗蚀剂上的绝缘膜的抗蚀剂和第一段以产生包括绝缘膜的第二段和三维特征的平坦表面。

公开(公告)号：US20070004077A1

公开(公告)日：2007-01-04

申请号：US11500212

申请日：2006-08-07

申请人： Junji Yamane ,  Kunihiko Hikichi

发明人： Junji Yamane ,  Kunihiko Hikichi

IPC分类号： H01L21/00

CPC分类号： H01L29/76891 ,  H01L27/14683 ,  H01L27/14812 ,  H01L27/14831 ,  H01L27/14843 ,  H01L29/66946 ,  H01L29/76866

摘要： A solid-state image pickup device includes: a plurality of light receiving portions arranged in a matrix, and a vertical transfer register which is four-phase driven by first, second, third and fourth transfer electrodes of a three-layer structure. The vertical transfer register is provided for each of columns of the light receiving portions. The first and third transfer electrodes of the first layer are alternately arranged in a charge transfer direction, and the adjacent two of the first and third transfer electrodes extend in parallel to each other between the light receiving portions. With this solid-state image pickup device, the accumulated charge capacity of each transfer region composed of the adjacent transfer electrodes for two-phases is equalized and the area of the light receiving portion is increased irrespective of variations in processed dimension between the transfer electrodes.

公开(公告)号：US06440782B1

公开(公告)日：2002-08-27

申请号：US08706864

申请日：1996-09-03

申请人： Chen-Chi P. Chang ,  James S. Cable

发明人： Chen-Chi P. Chang ,  James S. Cable

IPC分类号： H01L21339

CPC分类号： H01L29/66946 ,  H01L27/14683 ,  H01L27/14806

摘要： A silicon-based radiation-hard cryo-CMOS CCD process suitable for fabrication of devices (100) with sub-micron feature sizes. A re-oxidized nitride/oxide (RONO) layer (49″) is preserved in the CCD area (32) while plasma etching is used to define polysilicon 1 gates (50′) in the active FET area of the device. Thereafter, a wet chemical etching process, which does not destroy the integrity of the RONO layer (49″) in the CCD area, is carried out. A channel stop (48) is formed after the field oxidation step in the active FET area to reduce the space required for minimum diode breakdown voltage between the n+ source/drain region and the p+ channel stop.

摘要翻译： 一种适用于制造具有亚微米特征尺寸的器件（100）的硅基辐射 - 硬质低温CMOS CCD工艺。 在CCD区域（32）中保留再氧化的氮化物/氧化物（RONO）层（49“），而等离子体蚀刻用于在器件的有源FET区域中限定多晶硅1栅极（50'）。 此后，进行不破坏CCD区域中的RONO层（49“）的完整性的湿化学蚀刻工艺。 在有源FET区域中的场氧化步骤之后形成通道停止（48），以减少n +源极/漏极区域和p +沟道停止点之间的最小二极管击穿电压所需的空间。

公开(公告)号：US5040020A

公开(公告)日：1991-08-13

申请号：US430290

申请日：1989-11-02

申请人： Kurt Rauschenbach ,  Charles A. Lee

发明人： Kurt Rauschenbach ,  Charles A. Lee

IPC分类号： H01L21/027 ,  H01L21/338 ,  H01L21/339

CPC分类号： H01L29/66856 ,  H01L21/0274 ,  H01L29/66946

摘要： Methods of fabricating electrical contacts on both sides of a thin membrane to form a millimeter wave, self-aligned, opposed gate-source transistor are disclosed. The transistor structure has a subhalf-micron gate, dual-drains placed symmetrically around both sides of the gate, and a source approximately half the length of the gate. The source is directly opposite, and centered under, the gate on the opposite surface of a semiconductor thin film. The gate electrode is fabricated on the first surface of the thin film using conventional single surface lithography, and is used as a conformed mask for the source lithography, thereby self-aligning the source to the gate. The source is formed by resonant dielectric lithography, wherein the gate side of the thin film is irradiated by collimated ultraviolet light to expose a negative resist on the source side with a resolution of less than a wavelength. Lateral diffraction effects affect the relative dimension of the source with respect to the gate. The electron-beam lithographic process utilizes electron scattering in the thin film for the same purpose. This new untraviolet lithography process avoids the need to handle the thin film until after source metallization has been completed.

摘要翻译： 公开了在薄膜的两侧制造电接触以形成毫米波，自对准的相对的栅极 - 源极晶体管的方法。 晶体管结构具有一个亚微米栅极，对称地围绕栅极的两侧放置的双排水沟，源极大约为栅极长度的一半。 源极与半导体薄膜的相对表面上的栅极直接相对并且居中。 栅电极使用传统的单面光刻在薄膜的第一表面上制造，并且用作源光刻的一致掩模，从而将源自对准栅极。 源极通过共振电介质光刻形成，其中薄膜的栅极侧被准直的紫外线照射，以以小于波长的分辨率暴露出源侧的负光刻胶。 横向衍射效应影响源相对于栅极的相对尺寸。 电子束光刻工艺利用薄膜中的电子散射用于相同的目的。 这种新的无紫外光刻技术避免了在完成源极金属化之后处理薄膜的需要。

公开(公告)号：US4948746A

公开(公告)日：1990-08-14

申请号：US164342

申请日：1988-03-04

申请人： James D. Beasom

发明人： James D. Beasom

IPC分类号： H01L21/339 ,  H01L21/82 ,  H01L27/095 ,  H01L29/812

CPC分类号： H01L29/66946 ,  H01L21/82 ,  H01L27/095 ,  H01L29/8122 ,  H01L29/8124

摘要： A MESFET device is provided wherein the top Schottky gate is electrically isolated from the bottom gate. Methods as described for forming channels self aligned to Schottky top gates and complementary junction field effect transistors. A method is also described for adjusting or trimming the voltage to current characteristics of a MESFET by applying current pulses to the gate and through the channel to create conductive regions between the top and bottom gate. Dual segment gates or sources or drains may be provided to reduce the trimming current and appropriate steering circuity also provided. This technique may be used to adjust individual MESFETs, as well as current followers, differential amplifiers and other circuits which would be designed to include MESFETs.

摘要翻译： 提供MESFET器件，其中顶部肖特基栅极与底栅电隔离。 所描述的用于形成与肖特基顶栅和互补结场效应晶体管自对准的沟道的方法。 还描述了一种用于通过向栅极施加电流脉冲并通过沟道以在顶部栅极和底部栅极之间产生导电区域来调节或修整MESFET的电压特性的方法。 可以提供双段门或源或漏极以减少修整电流并且还提供适当的转向电路。 这种技术可以用于调整各个MESFET，以及电流跟随器，差分放大器和其他被设计为包括MESFET的电路。

公开(公告)号：US20090258456A1

公开(公告)日：2009-10-15

申请号：US12384938

申请日：2009-04-10

申请人： Tetsuya Hatai

发明人： Tetsuya Hatai

IPC分类号： H01L21/265 ,  H01L31/18

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  H01L27/14689 ,  H01L27/14806 ,  H01L29/66946

摘要： A method for manufacturing a solid-state image capturing apparatus including a pixel array constituted of a plurality of pixels, is provided, where each of the plurality of pixels includes a photoelectric conversion section, the method comprising the steps of: forming an impurity diffusion area in a surface area of a semiconductor substrate; and forming a plurality of different impurity diffusion areas in the surface area of the semiconductor substrate, other than the impurity diffusion area constituting the photoelectric conversion section.

摘要翻译： 提供一种制造包括由多个像素构成的像素阵列的固体摄像装置的方法，其中，所述多个像素中的每一个包括光电转换部，所述方法包括以下步骤：形成杂质扩散区域 在半导体衬底的表面积中; 以及在构成光电转换部的杂质扩散区域以外，在半导体衬底的表面区域中形成多个不同的杂质扩散区域。

公开(公告)号：US07125740B2

公开(公告)日：2006-10-24

申请号：US10889157

申请日：2004-07-12

申请人： Junji Yamane ,  Kunihiko Hikichi

发明人： Junji Yamane ,  Kunihiko Hikichi

IPC分类号： H01L21/00

CPC分类号： H01L29/76891 ,  H01L27/14683 ,  H01L27/14812 ,  H01L27/14831 ,  H01L27/14843 ,  H01L29/66946 ,  H01L29/76866

摘要： A method of fabricating a solid-state image pickup device comprising forming mask patterns corresponding to patterns of first and third transfer electrodes, which are to be alternately arranged in each vertical transfer register formation region and which are to extend in parallel to each other between light receiving portions adjacent to each other in the vertical direction, on a first electrode material layer. The method also includes forming side walls on each of the mask patterns. The method further includes patterning the first electrode material layer via the mask patterns having the side walls, to form first and third transfer electrodes formed by the first layer. The method yet further includes forming second transfer electrodes by a second electrode material layer via an insulating film in such a manner that each of said second transfer electrodes is disposed between the first and third transfer electrodes of the first layer in said vertical transfer register formation region and between the light receiving portions. The method still further includes forming fourth transfer electrodes by a third electrode material layer via an insulating film in such a manner that each of the fourth transfer electrodes is between the third and first transfer electrodes of the first layer in the vertical transfer register formation region and between the light receiving portions.

摘要翻译： 一种制造固态图像拾取装置的方法，包括形成对应于第一和第三转印电极的图案的掩模图案，所述掩模图案将交替布置在每个垂直传送寄存器形成区域中并且在光之间彼此平行延伸 在第一电极材料层上在垂直方向上彼此相邻的接收部分。 该方法还包括在每个掩模图案上形成侧壁。 该方法还包括通过具有侧壁的掩模图案来图案化第一电极材料层，以形成由第一层形成的第一和第三转移电极。 该方法还包括通过绝缘膜通过第二电极材料层形成第二转移电极，使得所述第二转移电极中的每一个设置在所述垂直转移寄存器形成区域中的第一层的第一和第三转移电极之间 并且在光接收部分之间。 该方法还包括通过绝缘膜通过第三电极材料层形成第四转移电极，使得第四转移电极中的每一个在垂直转移寄存器形成区域中位于第一层的第三和第一转移电极之间，以及 在光接收部分之间。