公开(公告)号：US06563124B2

公开(公告)日：2003-05-13

申请号：US09814373

申请日：2001-03-21

Applicant: Lee Veneklasen ,  Vidhya Krishnamurthi ,  Gil Winograd

Inventor： Lee Veneklasen ,  Vidhya Krishnamurthi ,  Gil Winograd

IPC: H01J3706

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/30 ,  H01J37/3174 ,  H01J2237/03

Abstract: An electron beam apparatus is capable of registering an image on a substrate. The apparatus comprises a vacuum chamber having a wall. Electron beam source, modulator, and detector components are adapted to generate, modulate and detect an array of electron beams in the vacuum chamber. A circuit board passing through the wall of the vacuum chamber has a plurality of electrical traces to connect to the electron beam source, modulator, and detector components.

公开(公告)号：US06538256B1

公开(公告)日：2003-03-25

申请号：US09641099

申请日：2000-08-17

Applicant: Marian Mankos ,  Vidhya Krishnamurthi ,  Kim Y. Lee

Inventor： Marian Mankos ,  Vidhya Krishnamurthi ,  Kim Y. Lee

IPC: H01J3708

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/70375 ,  H01J1/34 ,  H01J37/073 ,  H01J37/3175 ,  H01J2237/31779

Abstract: A method and system for electron beam lithography at high throughput with shorter electron beam column length, reduced electron-electron interactions, and higher beam current. The system includes a photocathode having a pattern composed of a periodic array of apertures with a specific geometry. The spacing of the apertures is chosen so as to maximize the transmission of the laser beam through apertures significantly smaller than the photon wavelength. The patterned photocathode is illuminated by an array of laser beams to allow blanking and gray-beam modulation of the individual beams at the source level by the switching of the individual laser beams in the array. Potential applications for this invention include electron beam direct write on wafers and mask patterning.

Abstract translation: 用于电子束光刻的方法和系统，其具有较短的电子束柱长度，减少的电子 - 电子相互作用和更高的束电流。 该系统包括具有由具有特定几何形状的周期性孔径阵列组成的图案的光电阴极。 选择孔的间距以便通过明显小于光子波长的孔的最大化激光束的透射。 图案化的光电阴极被激光束阵列照射，以通过阵列中的各个激光束的切换来允许源极处的各个光束的消隐和灰光束调制。 本发明的潜在应用包括晶片上的电子束直接写入和掩模图案化。