Abstract:
An electron beam apparatus is capable of registering an image on a substrate. The apparatus comprises a vacuum chamber having a wall. Electron beam source, modulator, and detector components are adapted to generate, modulate and detect an array of electron beams in the vacuum chamber. A circuit board passing through the wall of the vacuum chamber has a plurality of electrical traces to connect to the electron beam source, modulator, and detector components.
Abstract:
A device (102) for defining a pattern, for use in a particle-beam exposure apparatus (100), said device adapted to be irradiated with a beam (lb,pb) of electrically charged particles and let pass the beam only through a plurality of apertures, comprises an aperture array means (203) and a blanking means (202). The aperture array means (203) has a plurality of apertures (21,230) of identical shape defining the shape of beamlets (bm). The blanking means (202) serves to switch off the passage of selected beamlets; it has a plurality of openings (220), each corresponding to a respective aperture (230) of the aperture array means (203) and being provided with a deflection means (221) controllable to deflect particles radiated through the opening off their path (p1) to an absorbing surface within said exposure apparatus (100). The apertures (21) are arranged on the blanking and aperture array means (202,203) within a pattern definition field (pf) being composed of a plurality of staggered lines (p1) of apertures. Each of the lines (p1) comprises alternately first segments (sf) which are free of apertures and second segments (af) which each comprise a number of apertures spaced apart by a row offset (pm), said row offset being a multiple of the width (w) of apertures, the length (A) of said first segments (sf) being greater than the row offset. In front of the blanking means (202) as seen in the direction of the particle beam, a cover means (201) is provided having a plurality of openings (210), each corresponding to a respective opening (230) of the blanking means and having a width (w1) which is smaller than the width (w2) of the openings (220) of the blanking array means.
Abstract:
An electromagnetic wave applying apparatus having an electromagnetic wave source (13) such as an ultraviolet lamp or the like, a cylinder (15) surrounding the electromagnetic wave source, a liquid retention tank (16) disposed around the cylinder, and an inlet portion (17) for introducing a liquid overflow from the liquid retention tank as a thin film flowing down an inner wall surface of the cylinder, which is irradiated with an electromagnetic wave from the ultraviolet lamp (11). The electromagnetic wave applying apparatus also has swirling flow forming means for causing the liquid introduced from the inlet portion (17) onto the inner wall surface of the cylinder to flow as a swirling flow down the inner wall surface. The electromagnetic wave applying apparatus allows a large amount of liquid to be stably treated by the application of an electromagnetic wave without causing the electromagnetic wave source such as an ultraviolet lamp or the like to be contaminated.
Abstract:
Electron-beam sources are disclosed that exhibit substantially reduced spherical aberration compared to conventional sources. In a beam produced by the cathode of such a source, axially propagating electrons are subjected to a lens action by voltage applied to a Wehnelt electrode and an extraction electrode. The cathode includes a peripheral portion that is “drawn back” (displaced along the axis of the source away from the beam-propagation direction) relative to a center portion of the cathode. With such a cathode, the percentage of dimensions of the crossover involved in spherical aberration of the crossover is reduced. This improves the uniformity of beam current at a lithographic substrate and minimizes location-dependency of the aperture angle. Since the Wehnelt voltage can be reduced, positional changes in the electrical field at the cathode surface are reduced, and the distribution of electrons in the beam propagating from the cathode surface is made more uniform than conventionally.
Abstract:
A method and an accompanied apparatus for aligning an electron emitter with an extractor hole of a microcolumn. Four V-grooves, defined together with the window for forming the membrane and having bottoms situated on two axis are microfabricated on a chip. The axis intersect at a right angle and defines a center point for the extractor hole. The V-grooves are then used as references to align the electron emitter with the extractor hole, one axis at a time. The emitter is precisely aligned to the extractor hole because the extractor hole was formed with reference to the V-grooves. The thickness of the chip is used as the spacing reference between the emitter and the extractor.