Maskless particle-beam system for exposing a pattern on a substrate
    2.
    发明授权
    Maskless particle-beam system for exposing a pattern on a substrate 有权
    用于在衬底上露出图案的无掩模粒子束系统

    公开(公告)号:US06768125B2

    公开(公告)日:2004-07-27

    申请号:US10337903

    申请日:2003-01-08

    CPC classification number: B82Y10/00 B82Y40/00 H01J37/045 H01J37/3174

    Abstract: A device (102) for defining a pattern, for use in a particle-beam exposure apparatus (100), said device adapted to be irradiated with a beam (lb,pb) of electrically charged particles and let pass the beam only through a plurality of apertures, comprises an aperture array means (203) and a blanking means (202). The aperture array means (203) has a plurality of apertures (21,230) of identical shape defining the shape of beamlets (bm). The blanking means (202) serves to switch off the passage of selected beamlets; it has a plurality of openings (220), each corresponding to a respective aperture (230) of the aperture array means (203) and being provided with a deflection means (221) controllable to deflect particles radiated through the opening off their path (p1) to an absorbing surface within said exposure apparatus (100). The apertures (21) are arranged on the blanking and aperture array means (202,203) within a pattern definition field (pf) being composed of a plurality of staggered lines (p1) of apertures. Each of the lines (p1) comprises alternately first segments (sf) which are free of apertures and second segments (af) which each comprise a number of apertures spaced apart by a row offset (pm), said row offset being a multiple of the width (w) of apertures, the length (A) of said first segments (sf) being greater than the row offset. In front of the blanking means (202) as seen in the direction of the particle beam, a cover means (201) is provided having a plurality of openings (210), each corresponding to a respective opening (230) of the blanking means and having a width (w1) which is smaller than the width (w2) of the openings (220) of the blanking array means.

    Abstract translation: 一种用于限定用于粒子束曝光设备(100)的图案的设备(102),所述设备适于用带电粒子的光束(lb,pb)照射,并且仅使光束通过多个 的孔径包括孔径阵列装置(203)和消隐装置(202)。 孔径阵列装置(203)具有限定子束(bm)形状的相同形状的多个孔(21,230)。 消隐装置(202)用于切断所选子束的通过; 它具有多个开口(220),每个开口对应于孔阵列装置(203)的相应孔径(230),并且设置有偏转装置(221),该偏转装置可控制,以使通过开口辐射的颗粒偏离其路径(p1 )到所述曝光装置(100)内的吸收表面。 孔(21)布置在由多个交错的孔(p1)组成的图案定义区域(pf)内的消隐和孔径阵列装置(202,203)上。 线(p1)中的每一个交替地包括没有孔的第一段(sf)和第二段(af),每个段包括通过行偏移(pm)间隔开的多个孔,所述行偏移是 孔的宽度(w),所述第一段(sf)的长度(A)大于行偏移。 在沿着该粒子束的方向观察的消隐装置(202)的前面,提供具有多个开口(210)的盖装置(201),每个开口对应于消隐装置的相应开口(230) 具有比消隐阵列装置的开口(220)的宽度(w2)小的宽度(w1)。

    Method and apparatus for electromagnetic irradiation of liquid
    3.
    发明授权
    Method and apparatus for electromagnetic irradiation of liquid 失效
    将电磁波施加到液体的装置和方法

    公开(公告)号:US06713771B2

    公开(公告)日:2004-03-30

    申请号:US10204599

    申请日:2002-11-26

    Abstract: An electromagnetic wave applying apparatus having an electromagnetic wave source (13) such as an ultraviolet lamp or the like, a cylinder (15) surrounding the electromagnetic wave source, a liquid retention tank (16) disposed around the cylinder, and an inlet portion (17) for introducing a liquid overflow from the liquid retention tank as a thin film flowing down an inner wall surface of the cylinder, which is irradiated with an electromagnetic wave from the ultraviolet lamp (11). The electromagnetic wave applying apparatus also has swirling flow forming means for causing the liquid introduced from the inlet portion (17) onto the inner wall surface of the cylinder to flow as a swirling flow down the inner wall surface. The electromagnetic wave applying apparatus allows a large amount of liquid to be stably treated by the application of an electromagnetic wave without causing the electromagnetic wave source such as an ultraviolet lamp or the like to be contaminated.

    Abstract translation: 具有紫外线灯等电磁波源(13)的电磁波施加装置,围绕电磁波源的圆筒(15),设置在圆筒上的液体保持箱(16)和入口部( 17),其用于从液体保持槽引入液体溢出,作为从所述紫外灯(11)照射了电磁波的从所述气缸的内壁面向下流动的薄膜。 电磁波施加装置还具有旋转流形成装置,用于使从入口部分(17)引入到圆筒的内壁表面上的液体沿着内壁表面沿着旋流流动。 电磁波施加装置允许通过施加电磁波来稳定地处理大量的液体,而不会使诸如紫外线灯等的电磁波源被污染。

    Electron-beam sources exhibiting reduced spherical aberration, and microlithography apparatus comprising same

    公开(公告)号:US06621090B2

    公开(公告)日:2003-09-16

    申请号:US09901766

    申请日:2001-07-09

    Inventor: Hiroyasu Simizu

    CPC classification number: H01J37/063 H01J2237/153 H01J2237/3175

    Abstract: Electron-beam sources are disclosed that exhibit substantially reduced spherical aberration compared to conventional sources. In a beam produced by the cathode of such a source, axially propagating electrons are subjected to a lens action by voltage applied to a Wehnelt electrode and an extraction electrode. The cathode includes a peripheral portion that is “drawn back” (displaced along the axis of the source away from the beam-propagation direction) relative to a center portion of the cathode. With such a cathode, the percentage of dimensions of the crossover involved in spherical aberration of the crossover is reduced. This improves the uniformity of beam current at a lithographic substrate and minimizes location-dependency of the aperture angle. Since the Wehnelt voltage can be reduced, positional changes in the electrical field at the cathode surface are reduced, and the distribution of electrons in the beam propagating from the cathode surface is made more uniform than conventionally.

    Precision alignment of microcolumn tip to a micron-size extractor aperture
    5.
    发明授权
    Precision alignment of microcolumn tip to a micron-size extractor aperture 失效
    微柱尖端与微米尺寸提取孔的精确对准

    公开(公告)号:US06297584B1

    公开(公告)日:2001-10-02

    申请号:US09675567

    申请日:2000-09-29

    CPC classification number: H01J9/18 H01J37/067 H01J2201/304 H01J2237/1501

    Abstract: A method and an accompanied apparatus for aligning an electron emitter with an extractor hole of a microcolumn. Four V-grooves, defined together with the window for forming the membrane and having bottoms situated on two axis are microfabricated on a chip. The axis intersect at a right angle and defines a center point for the extractor hole. The V-grooves are then used as references to align the electron emitter with the extractor hole, one axis at a time. The emitter is precisely aligned to the extractor hole because the extractor hole was formed with reference to the V-grooves. The thickness of the chip is used as the spacing reference between the emitter and the extractor.

    Abstract translation: 用于将电子发射器与微柱的提取孔对准的方法和伴随装置。 与形成膜并且具有位于两个轴上的底部的窗口一起定义的四个V形槽在芯片上微加工。 轴线以直角相交,并定义了提取孔的中心点。 然后使用V形槽作为参考,以将电子发射体与提取孔对准,一次一个轴。 由于提取孔是相对于V形槽形成的,所以发射极精确地对准提取孔。 芯片的厚度用作发射器和提取器之间的间距基准。

Patent Agency Ranking