公开(公告)号：US08223329B2

公开(公告)日：2012-07-17

申请号：US13279936

申请日：2011-10-24

Applicant: Kun Joo Park ,  Kwang Hoon Han ,  Kee Hyun Kim ,  Weon Mook Lee ,  Kyounghoon Han ,  Heeyeop Chae

Inventor： Kun Joo Park ,  Kwang Hoon Han ,  Kee Hyun Kim ,  Weon Mook Lee ,  Kyounghoon Han ,  Heeyeop Chae

IPC: G01J3/00

CPC classification number: H01J37/32963 ,  G01N21/71 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/67253

Abstract: An endpoint detection device, a plasma reactor with the endpoint detection device, and an endpoint detection method are provided. The endpoint detection device includes an OES data operation unit, a data selector, a product generator, an SVM, and an endpoint determiner. The OES data operation unit processes reference OES data by normalization and PCA. The data selector selects part of the linear reference loading vectors and selects part of the selected linear reference loading vectors. The product generator outputs at least one reference product value. The SVM performs regression and outputs a prediction product value. The endpoint determiner detects a process wafer etch or deposition endpoint and outputs a detection signal.

Abstract translation: 提供端点检测装置，具有端点检测装置的等离子体反应器和端点检测方法。 端点检测装置包括OES数据操作单元，数据选择器，产品生成器，SVM和端点确定器。 OES数据操作单元通过归一化和PCA处理参考OES数据。 数据选择器选择部分线性参考载入矢量并选择部分所选线性参考载入矢量。 产品发生器输出至少一个参考产品值。 SVM执行回归并输出预测乘积值。 端点确定器检测处理晶片蚀刻或沉积端点并输出检测信号。

公开(公告)号：US20070221331A1

公开(公告)日：2007-09-27

申请号：US11724861

申请日：2007-03-16

Applicant: Weon-Mook Lee

Inventor： Weon-Mook Lee

IPC: C23F1/00

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32165 ,  H01L21/67069

Abstract: Provided is a hybrid plasma reactor. The hybrid plasma reactor includes an ICP (Inductively Coupled Plasma) source unit and a bias RF (Radio Frequency) power supply unit. The ICP source unit includes a chamber, an antenna coil unit, and a source power supply unit. The chamber includes a chamber body whose top is opened and a dielectric window covering the opened top of the chamber body. The antenna coil unit is disposed outside of the dielectric window. The source power supply unit supplies a source power to the antenna coil unit. The bias RF power supply unit supplies a bias RF power to a cathode. The cathode is installed within the chamber and mounts a target wafer on its top.

Abstract translation: 提供了一种混合等离子体反应器。 混合等离子体反应器包括ICP（感应耦合等离子体）源单元和偏置RF（射频）电源单元。 ICP源单元包括室，天线线圈单元和源电源单元。 该腔室包括一个其顶部打开的腔室主体和一个覆盖腔室主体开口顶部的电介质窗口。 天线线圈单元设置在电介质窗口的外侧。 源电源单元向天线线圈单元提供源电源。 偏置RF电源单元向阴极提供偏置RF功率。 阴极安装在室内，并将目标晶片安装在其顶部。

公开(公告)号：US08123903B2

公开(公告)日：2012-02-28

申请号：US11995214

申请日：2006-07-06

Applicant: Weon-Mook Lee

Inventor： Weon-Mook Lee

IPC: C23C16/00 ,  H01L21/306

CPC classification number: H05H1/46 ,  H01J37/321

Abstract: A plasma reactor includes a chamber in which a wafer is treated by a plasma reaction, the chamber being provided at an upper portion with a cylindrical dielectric window, a multiple antenna structure disposed on upper and lower portions of the dielectric window to generate RF magnetic field and apply the RF magnetic field inside the chamber through the dielectric window, thereby generating RF electric field, and an RF electric power supply unit for allowing for a time variation of the magnetic field of the multiple antenna structure.

Abstract translation: 等离子体反应器包括其中通过等离子体反应处理晶片的室，所述室在上部设置有圆柱形介电窗口，多天线结构设置在电介质窗口的上部和下部以产生RF磁场 并通过介电窗施加室内的RF磁场，从而产生RF电场;以及RF电源单元，用于允许多天线结构的磁场的时间变化。

公开(公告)号：US20090029489A1

公开(公告)日：2009-01-29

申请号：US12036781

申请日：2008-02-25

Applicant: Kun Joo Park ,  Kwang Hoon Han ,  Kee Hyun Kim ,  Weon Mook Lee ,  Kyounghoon Han ,  Heeyeop Chae

Inventor： Kun Joo Park ,  Kwang Hoon Han ,  Kee Hyun Kim ,  Weon Mook Lee ,  Kyounghoon Han ,  Heeyeop Chae

IPC: H01L21/3065 ,  B05C11/00 ,  H01L21/00

CPC classification number: H01J37/32963 ,  G01N21/71 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/67253

Abstract: An endpoint detection device, a plasma reactor with the endpoint detection device, and an endpoint detection method are provided. The endpoint detection device includes an OES data operation unit, a data selector, a product generator, an SVM, and an endpoint determiner. The OES data operation unit processes reference OES data by normalization and PCA. The data selector selects part of the linear reference loading vectors and selects part of the selected linear reference loading vectors. The product generator outputs at least one reference product value. The SVM performs regression and outputs a prediction product value. The endpoint determiner detects a process wafer etch or deposition endpoint and outputs a detection signal.

Abstract translation: 提供端点检测装置，具有端点检测装置的等离子体反应器和端点检测方法。 端点检测装置包括OES数据操作单元，数据选择器，产品生成器，SVM和端点确定器。 OES数据操作单元通过归一化和PCA处理参考OES数据。 数据选择器选择部分线性参考载入矢量并选择部分所选线性参考载入矢量。 产品发生器输出至少一个参考产品值。 SVM执行回归并输出预测乘积值。 端点确定器检测处理晶片蚀刻或沉积端点并输出检测信号。

公开(公告)号：US08049872B2

公开(公告)日：2011-11-01

申请号：US12036781

申请日：2008-02-25

Applicant: Kun Joo Park ,  Kwang Hoon Han ,  Kee Hyun Kim ,  Weon Mook Lee ,  Kyounghoon Han ,  Heeyeop Chae

Inventor： Kun Joo Park ,  Kwang Hoon Han ,  Kee Hyun Kim ,  Weon Mook Lee ,  Kyounghoon Han ,  Heeyeop Chae

IPC: G01N21/00

CPC classification number: H01J37/32963 ,  G01N21/71 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/67253

Abstract: An endpoint detection device, a plasma reactor with the endpoint detection device, and an endpoint detection method are provided. The endpoint detection device includes an OES data operation unit, a data selector, a product generator, an SVM, and an endpoint determiner. The OES data operation unit processes reference OES data by normalization and PCA. The data selector selects part of the linear reference loading vectors and selects part of the selected linear reference loading vectors. The product generator outputs at least one reference product value. The SVM performs regression and outputs a prediction product value. The endpoint determiner detects a process wafer etch or deposition endpoint and outputs a detection signal.

Abstract translation: 提供端点检测装置，具有端点检测装置的等离子体反应器和端点检测方法。 端点检测装置包括OES数据操作单元，数据选择器，产品生成器，SVM和端点确定器。 OES数据操作单元通过归一化和PCA处理参考OES数据。 数据选择器选择部分线性参考载入矢量并选择部分所选线性参考载入矢量。 产品发生器输出至少一个参考产品值。 SVM执行回归并输出预测乘积值。 端点确定器检测处理晶片蚀刻或沉积端点并输出检测信号。

公开(公告)号：US20080210378A1

公开(公告)日：2008-09-04

申请号：US11995214

申请日：2006-07-06

Applicant: Weon-Mook Lee

Inventor： Weon-Mook Lee

IPC: C23F1/00 ,  C23C16/00

CPC classification number: H05H1/46 ,  H01J37/321

Abstract: A plasma reactor includes a chamber in which a wafer is treated by a plasma reaction, the chamber being provided at an upper portion with a cylindrical dielectric window, a multiple antenna structure disposed on upper and lower portions of the dielectric window to generate RF magnetic field and apply the RF magnetic field inside the chamber through the dielectric window, thereby generating RF electric field, and an RF electric power supply unit for allowing for a time variation of the magnetic field of the multiple antenna structure.

Abstract translation: 等离子体反应器包括其中通过等离子体反应处理晶片的室，所述室在上部设置有圆柱形介电窗口，多天线结构设置在电介质窗口的上部和下部以产生RF磁场 并通过介电窗施加室内的RF磁场，从而产生RF电场;以及RF电源单元，用于允许多天线结构的磁场的时间变化。

公开(公告)号：US20120041584A1

公开(公告)日：2012-02-16

申请号：US13279936

申请日：2011-10-24

Applicant: Kun Joo PARK ,  Kwang Hoon HAN ,  Kee Hyun KIM ,  Weon Mook LEE ,  Kyounghoon HAN ,  Heeyeop CHAE

Inventor： Kun Joo PARK ,  Kwang Hoon HAN ,  Kee Hyun KIM ,  Weon Mook LEE ,  Kyounghoon HAN ,  Heeyeop CHAE

IPC: G06F19/00

CPC classification number: H01J37/32963 ,  G01N21/71 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/67253

Abstract: An endpoint detection device, a plasma reactor with the endpoint detection device, and an endpoint detection method are provided. The endpoint detection device includes an OES data operation unit, a data selector, a product generator, an SVM, and an endpoint determiner. The OES data operation unit processes reference OES data by normalization and PCA. The data selector selects part of the linear reference loading vectors and selects part of the selected linear reference loading vectors. The product generator outputs at least one reference product value. The SVM performs regression and outputs a prediction product value. The endpoint determiner detects a process wafer etch or deposition endpoint and outputs a detection signal.

Abstract translation: 提供端点检测装置，具有端点检测装置的等离子体反应器和端点检测方法。 端点检测装置包括OES数据操作单元，数据选择器，产品生成器，SVM和端点确定器。 OES数据操作单元通过归一化和PCA处理参考OES数据。 数据选择器选择部分线性参考载入矢量并选择部分所选线性参考载入矢量。 产品发生器输出至少一个参考产品值。 SVM执行回归并输出预测乘积值。 端点确定器检测处理晶片蚀刻或沉积端点并输出检测信号。

公开(公告)号：US20080271762A1

公开(公告)日：2008-11-06

申请号：US12061303

申请日：2008-04-02

Applicant: Kun Joo PARK ,  Hwan Kook CHAE ,  Byoungil LEE ,  Kee Hyun KIM ,  Weon Mook LEE

Inventor： Kun Joo PARK ,  Hwan Kook CHAE ,  Byoungil LEE ,  Kee Hyun KIM ,  Weon Mook LEE

IPC: B08B5/00

CPC classification number: G05D11/132 ,  H01L21/67069 ,  H01L21/67253

Abstract: An etching gas control system is provided. The system includes a gas injector, a gas supply pipe, a Flow Ratio Controller (FRC), and a gas supply unit. The gas injector is installed in a chamber and supplies gas inside the chamber. The gas injector includes a top injector installed at a top of the chamber and a side injector installed at a side of the chamber. The gas supply pipe connects and supplies gas to the gas injector. The FRC connects to the gas supply pipe and controls supply of gas. The gas supply unit supplies gas to the FRC.

Abstract translation: 提供蚀刻气体控制系统。 该系统包括气体喷射器，气体供给管，流量比控制器（FRC）和气体供应单元。 气体注射器安装在腔室中并在腔室内提供气体。 气体喷射器包括安装在腔室顶部的顶部喷射器和安装在腔室一侧的侧面喷射器。 气体供给管连接并向气体喷射器供应气体。 FRC连接到气体供应管道并控制气体供应。 气体供应单元向FRC提供气体。