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公开(公告)号：US20120178223A1
公开(公告)日：2012-07-12
申请号：US13235193
申请日：2011-09-16
IPC分类号： H01L21/331
CPC分类号： H01L29/66348 , H01L21/268 , H01L29/7397
摘要： According to one embodiment, a method of manufacturing a semiconductor device includes a polishing step, a first amorphous silicon film formation step, a single crystallization step and a buffer layer formation step. In the first amorphous silicon film formation step, a first amorphous silicon film of the first conductivity type is formed on the polished back surface of the high-resistance layer, the first amorphous silicon film having a higher impurity concentration than the high-resistance layer. In the single crystallization step, the first amorphous silicon film is single-crystallized by irradiating the first amorphous silicon film with a first laser. In the buffer layer formation step, the formation and single-crystallization of the first amorphous silicon film are repeated more than once to form a buffer layer of the first conductivity type on the back surface of the high-resistance layer, the buffer layer having a higher impurity concentration than the high-resistance layer.
摘要翻译： 根据一个实施例，制造半导体器件的方法包括抛光步骤，第一非晶硅膜形成步骤，单一结晶步骤和缓冲层形成步骤。 在第一非晶硅膜形成步骤中，第一导电类型的第一非晶硅膜形成在高电阻层的抛光后表面上，第一非晶硅膜的杂质浓度高于高电阻层。 在单结晶化步骤中，通过用第一激光照射第一非晶硅膜来使第一非晶硅膜单晶化。 在缓冲层形成步骤中，第一非晶硅膜的形成和单晶化重复多于一次以在高电阻层的背面上形成第一导电类型的缓冲层，缓冲层具有 杂质浓度高于高电阻层。
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公开(公告)号：US08067310B2
公开(公告)日：2011-11-29
申请号：US12645908
申请日：2009-12-23
CPC分类号： H01L23/53209 , H01L21/76852 , H01L21/76883 , H01L21/76885 , H01L29/66666 , H01L29/7827 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device, includes: forming a first metal layer on a semiconductor substrate, the semiconductor substrate including a diffusion layer; forming an insulating layer having an opening on the first metal layer; forming a second metal layer on the first metal layer in the opening of the insulating layer; removing the insulating layer; covering an exposed surface of the second metal layer with a third metal layer, the third metal layer including a metal having an ionization tendency lower than that of the second metal layer; and forming an electrode interconnect including the first metal layer, the second metal layer, and the third metal layer by removing the first metal layer using the third metal layer as a mask.
摘要翻译： 一种制造半导体器件的方法，包括：在半导体衬底上形成第一金属层，所述半导体衬底包括扩散层; 在所述第一金属层上形成具有开口的绝缘层; 在绝缘层的开口中的第一金属层上形成第二金属层; 去除绝缘层; 用第三金属层覆盖第二金属层的暴露表面，第三金属层包括电离倾向低于第二金属层的金属; 以及通过使用第三金属层作为掩模去除第一金属层，形成包括第一金属层，第二金属层和第三金属层的电极互连。
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公开(公告)号：US20100164095A1
公开(公告)日：2010-07-01
申请号：US12645908
申请日：2009-12-23
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L23/53209 , H01L21/76852 , H01L21/76883 , H01L21/76885 , H01L29/66666 , H01L29/7827 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device, includes: forming a first metal layer on a semiconductor substrate, the semiconductor substrate including a diffusion layer; forming an insulating layer having an opening on the first metal layer; forming a second metal layer on the first metal layer in the opening of the insulating layer; removing the insulating layer; covering an exposed surface of the second metal layer with a third metal layer, the third metal layer including a metal having an ionization tendency lower than that of the second metal layer; and forming an electrode interconnect including the first metal layer, the second metal layer, and the third metal layer by removing the first metal layer using the third metal layer as a mask.
摘要翻译： 一种制造半导体器件的方法，包括：在半导体衬底上形成第一金属层，所述半导体衬底包括扩散层; 在所述第一金属层上形成具有开口的绝缘层; 在绝缘层的开口中的第一金属层上形成第二金属层; 去除绝缘层; 用第三金属层覆盖第二金属层的暴露表面，第三金属层包括电离倾向低于第二金属层的金属; 以及通过使用第三金属层作为掩模去除第一金属层，形成包括第一金属层，第二金属层和第三金属层的电极互连。
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公开(公告)号：US08415247B2
公开(公告)日：2013-04-09
申请号：US13234099
申请日：2011-09-15
IPC分类号： H01L21/4763
CPC分类号： H01L23/53209 , H01L21/76852 , H01L21/76883 , H01L21/76885 , H01L29/66666 , H01L29/7827 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device, includes: forming a first metal layer on a semiconductor substrate, the semiconductor substrate including a diffusion layer; forming an insulating layer having an opening on the first metal layer; forming a second metal layer on the first metal layer in the opening of the insulating layer; removing the insulating layer; covering an exposed surface of the second metal layer with a third metal layer, the third metal layer including a metal having an ionization tendency lower than that of the second metal layer; and forming an electrode interconnect including the first metal layer, the second metal layer, and the third metal layer by removing the first metal layer using the third metal layer as a mask.
摘要翻译： 一种制造半导体器件的方法，包括：在半导体衬底上形成第一金属层，所述半导体衬底包括扩散层; 在所述第一金属层上形成具有开口的绝缘层; 在绝缘层的开口中的第一金属层上形成第二金属层; 去除绝缘层; 用第三金属层覆盖第二金属层的暴露表面，第三金属层包括电离倾向低于第二金属层的金属; 以及通过使用第三金属层作为掩模去除第一金属层，形成包括第一金属层，第二金属层和第三金属层的电极互连。
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公开(公告)号：US20120001321A1
公开(公告)日：2012-01-05
申请号：US13234099
申请日：2011-09-15
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L23/53209 , H01L21/76852 , H01L21/76883 , H01L21/76885 , H01L29/66666 , H01L29/7827 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device, includes: forming a first metal layer on a semiconductor substrate, the semiconductor substrate including a diffusion layer; forming an insulating layer having an opening on the first metal layer; forming a second metal layer on the first metal layer in the opening of the insulating layer; removing the insulating layer; covering an exposed surface of the second metal layer with a third metal layer, the third metal layer including a metal having an ionization tendency lower than that of the second metal layer; and forming an electrode interconnect including the first metal layer, the second metal layer, and the third metal layer by removing the first metal layer using the third metal layer as a mask.
摘要翻译： 一种制造半导体器件的方法，包括：在半导体衬底上形成第一金属层，所述半导体衬底包括扩散层; 在所述第一金属层上形成具有开口的绝缘层; 在绝缘层的开口中的第一金属层上形成第二金属层; 去除绝缘层; 用第三金属层覆盖第二金属层的暴露表面，第三金属层包括电离倾向低于第二金属层的金属; 以及通过使用第三金属层作为掩模去除第一金属层，形成包括第一金属层，第二金属层和第三金属层的电极互连。
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