公开(公告)号：US10854524B2

公开(公告)日：2020-12-01

申请号：US16531296

申请日：2019-08-05

Applicant: ABB Schweiz AG

Inventor： David Guillon ,  Charalampos Papadopoulos ,  Dominik Truessel ,  Fabian Fischer ,  Samuel Hartmann

IPC: H01L23/053 ,  H01L23/24 ,  H01L23/31 ,  H01L23/492 ,  H01L23/00

Abstract: The present application provides a power semiconductor module, including a support which carries at least one power semiconductor device, the support together with the power semiconductor device is at least partly located in a housing, the support and the power semiconductor device are at least partly covered by a sealing material, additionally to the sealing material, a protecting material is provided in the housing, the protecting material is formed from silicon gel and the protecting material at least partly covers at least one of the support, the power semiconductor device and the sealing material.

公开(公告)号：US09984948B2

公开(公告)日：2018-05-29

申请号：US15586928

申请日：2017-05-04

Applicant: ABB Schweiz AG

Inventor： David Guillon ,  Heinz Lendenmann ,  Hui Huang

IPC: H01L23/29 ,  H01L23/06 ,  H01L29/739 ,  H01L23/31 ,  H01L23/051

CPC classification number: H01L23/29 ,  H01L23/051 ,  H01L23/06 ,  H01L23/3121 ,  H01L29/7393 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/8592 ,  H01L2924/1815 ,  H01L2924/00014

Abstract: A power electronics module includes: a baseplate, a power semiconductor chip arranged on the baseplate, and an encapsulation structure arranged on the baseplate and configured to encapsulate the power semiconductor chip, wherein the encapsulation structure is an epoxy having an elastic modulus in a range of 1 to 20 Giga Pascal, GPa, at room temperature and a coefficient of thermal expansion less than 20 ppm/K.

公开(公告)号：US20170365535A1

公开(公告)日：2017-12-21

申请号：US15586928

申请日：2017-05-04

Applicant: ABB Schweiz AG

Inventor： David Guillon ,  Heinz Lendenmann ,  Hui Huang

IPC: H01L23/29 ,  H01L29/739 ,  H01L23/06

CPC classification number: H01L23/29 ,  H01L23/051 ,  H01L23/06 ,  H01L23/3121 ,  H01L29/7393 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/8592 ,  H01L2924/1815 ,  H01L2924/00014

Abstract: The present disclosure relates to a high voltage power electronics module for subsea applications. The power electronics module includes: a baseplate, a power semiconductor chip arranged on the baseplate, and an encapsulation structure arranged on the baseplate and configured to encapsulate the power semiconductor chip, wherein the encapsulation structure is an epoxy having an elastic modulus less in a range of 1 to 20 Giga Pascal, GPa, at room temperature and a coefficient of thermal expansion less than 20 ppm/K.

公开(公告)号：US20170323801A1

公开(公告)日：2017-11-09

申请号：US15658124

申请日：2017-07-24

Applicant: ABB Schweiz AG

Inventor： Venkatesh Sivasubramaniam ,  David Guillon ,  Pauline Morin ,  Remi-Alain Guillemin ,  Samuel Hartmann

IPC: H01L21/48 ,  H01L23/498 ,  H01L23/373

CPC classification number: H01L21/4853 ,  H01L23/3735 ,  H01L23/49811 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present application relates to a method of generating a power semiconductor module including a carrier layer and a substrate having a terminal connection area, the method comprising: soldering the substrate to the carrier layer by forming a solder layer; wherein the solder layer is formed such, that a pre-defined cavity is provided in the solder layer adjacent to the substrate and located opposite to the terminal connection area; and welding a terminal to the terminal connection area of the substrate.The present application provides a method of generating a power semiconductor module which is especially cost-saving to perform and allows a reliable generation of high quality modules.

公开(公告)号：US20190363029A1

公开(公告)日：2019-11-28

申请号：US16531296

申请日：2019-08-05

Applicant: ABB Schweiz AG

Inventor： David Guillon ,  Charalampos Papadopoulos ,  Dominik Truessel ,  Fabian Fischer ,  Samuel Hartmann

IPC: H01L23/053 ,  H01L23/24 ,  H01L23/31 ,  H01L23/00 ,  H01L23/492

Abstract: The present application provides a power semiconductor module, including a support which carries at least one power semiconductor device, the support together with the power semiconductor device is at least partly located in a housing, the support and the power semiconductor device are at least partly covered by a sealing material, additionally to the sealing material, a protecting material is provided in the housing, the protecting material is formed from silicon gel and the protecting material at least partly covers at least one of the support, the power semiconductor device and the sealing material.