公开(公告)号：US20200002231A1

公开(公告)日：2020-01-02

申请号：US16567055

申请日：2019-09-11

Applicant: AGC Inc.

Inventor： Shuhei OGAWA ,  Naomichi MIYAKAWA ,  Yasuo SHINOZAKI ,  Haruhiko YOSHINO ,  Kazunari TOHYAMA ,  Kazuto OHKOSHI

IPC: C04B35/117 ,  C04B38/00 ,  C04B38/06

Abstract: The present invention relates to a light-transmitting ceramic sintered body which contains air voids having pore diameters of 1 μm or more but less than 5 μm at a density within the range of from 10 voids/mm3 to 4,000 voids/mm3 (inclusive), while having a closed porosity of from 0.01% by volume to 1.05% by volume (inclusive). With respect to this light-transmitting ceramic sintered body, a test piece having a thickness of 1.90 mm has an average transmittance of 70% or more in the visible spectrum wavelength range of 500-900 nm, and the test piece having a thickness of 1.90 mm has a sharpness of 60% or more at a comb width of 0.5 mm.

公开(公告)号：US20200287051A1

公开(公告)日：2020-09-10

申请号：US16878904

申请日：2020-05-20

Applicant: AGC Inc.

Inventor： Kunio MASUMO ,  Nao ISHIBASHI ,  Nobuhiro NAKAMURA ,  Satoru WATANABE ,  Kazuto OHKOSHI ,  Naomichi MIYAKAWA

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/45 ,  H01L21/02 ,  H01L21/383 ,  H01L21/425 ,  H01L29/66

Abstract: A thin film transistor of a top-gate-coplanar type includes a source, a drain, a gate, and a semiconductor layer, wherein the semiconductor layer has a first low-resistance region for the source and a second low-resistance region for the drain, wherein the source and the drain are electrically connected through the first low-resistance region, the semiconductor layer, and the second low-resistance region, and wherein the semiconductor layer is formed of an oxide-based semiconductor containing gallium (Ga), zinc (Zn), and tin (Sn).

公开(公告)号：US20180374959A1

公开(公告)日：2018-12-27

申请号：US16117761

申请日：2018-08-30

Applicant: TOKYO INSTITUTE OF TECHNOLOGY ,  AGC Inc.

Inventor： Hideo HOSONO ,  Toshio KAMIYA ,  Hideya KUMOMI ,  Junghwan KIM ,  Nobuhiro NAKAMURA ,  Satoru WATANABE ,  Naomichi MIYAKAWA

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L23/532 ,  H01L23/31

Abstract: An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm2/Vs or more.

公开(公告)号：US20230373863A1

公开(公告)日：2023-11-23

申请号：US18363788

申请日：2023-08-02

Applicant: AGC Inc.

Inventor： Shuhei OGAWA ,  Naomichi MIYAKAWA

IPC: C04B35/195 ,  C04B35/64 ,  C04B35/63 ,  C09K5/14

CPC classification number: C04B35/195 ,  C04B35/64 ,  C04B35/6303 ,  C09K5/14 ,  C04B2235/3481 ,  C04B2235/3463 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/5436 ,  C04B2235/9607

Abstract: The present invention relates to a cordierite sintered body including all elements belonging to an element group M1 consisting of calcium, magnesium, aluminum, and silicon, in which a content of the calcium is 0.06 mass % or more and 3.40 mass % or less in terms of oxide, a content of the magnesium is 12.9 mass % or more in terms of oxide, a content of an element M2, which is a metal element other than the elements belonging to the element group M1, is 1.5 mass % or less in terms of oxide, a porosity is 3.0 vol % or less, a four-point bending strength is 170 MPa or more, and a Weibull coefficient is 9.5 or more.

公开(公告)号：US20190058142A1

公开(公告)日：2019-02-21

申请号：US16169078

申请日：2018-10-24

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY ,  AGC Inc.

Inventor： Hideo HOSONO ,  Yoshitake TODA ,  Satoru WATANABE ,  Toshinari WATANABE ,  Kazuhiro ITO ,  Naomichi MIYAKAWA ,  Nobuhiro NAKAMURA

IPC: H01L51/42 ,  H01L31/032 ,  C23C14/08 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L51/50 ,  H01L31/0256

Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.