公开(公告)号：US11136670B2

公开(公告)日：2021-10-05

申请号：US15870756

申请日：2018-01-12

Applicant: AP SYSTEMS INC.

Inventor： Sang Hyun Ji ,  Chang Kyo Kim

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/40

Abstract: A gas spraying apparatus according to the embodiment of the present invention includes a spray part disposed and aligned on one side outside a substrate in the width direction of the substrate, and having a plurality of nozzles for spraying gas toward the substrate, and a spray control unit for automatically controlling whether or not each of a plurality of nozzles sprays gas such that a gas density distribution type in the width direction of the substrate becomes a targeted gas density distribution type by the gas sprayed through the plurality of nozzles. Therefore, according to the embodiment of the present invention, it is easy to carry out the process with a plurality of types of process types or a plurality of types of gas density distribution types, and a time for adjusting the open or close operation of the plurality of nozzles can be shortened.

公开(公告)号：USD1051081S1

公开(公告)日：2024-11-12

申请号：US29891976

申请日：2023-05-11

Applicant: AP SYSTEMS INC.

Designer： Chang Min Kwon ,  Chang Kyo Kim

公开(公告)号：USD1034493S1

公开(公告)日：2024-07-09

申请号：US29891977

申请日：2023-05-11

Applicant: AP SYSTEMS INC.

Designer： Chang Min Kwon ,  Chang Kyo Kim

Abstract: FIG. 1 is a perspective view of a chamber wall liner for a semiconductor manufacturing apparatus, showing our new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left side view thereof;
FIG. 5 is a right side view thereof;
FIG. 6 is a top plan view thereof; and,
FIG. 7 is a bottom plan view thereof.

公开(公告)号：US11450551B2

公开(公告)日：2022-09-20

申请号：US16989864

申请日：2020-08-10

Applicant: AP SYSTEMS INC.

Inventor： Chang Kyo Kim ,  Chang Min Kwon

IPC: H01L21/687 ,  H01L21/67 ,  C23C16/458

Abstract: Provided are an edge ring and a heat treatment apparatus having the same. The edge ring includes a main body having a ring shape. The main body includes a substrate support part configured to support an edge of a bottom surface of a substrate, an outer band provided outside the substrate support part and having a top surface that is higher than a top surface of the substrate support part and is parallel to a top surface of the substrate supported by the substrate support part, an outer sidewall provided outside the outer band, and a groove part provided between the substrate support part and the outer band.

公开(公告)号：US11967492B2

公开(公告)日：2024-04-23

申请号：US17495796

申请日：2021-10-06

Applicant: AP SYSTEMS INC.

Inventor： Byoung Il Lee ,  Chang Kyo Kim ,  Chang Min Kwon ,  Seung Won Yu

IPC: H01J37/32 ,  C23C16/509

CPC classification number: H01J37/32899 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32568

Abstract: The present disclosure relates to a thin film manufacturing apparatus including a chamber having an inner process space of a substrate, a substrate support unit connected to the chamber to support the substrate in the chamber, a heat source unit connected to the chamber and disposed opposite to the substrate support unit, a plasma generation unit connected to one side of the chamber to supply radicals between the substrate support unit and the heat source unit, and a baffle connected to the chamber and including a movement passage of the radicals therein and a plurality of first exhaust holes communicating with the movement passage, which are formed in a top surface thereof. The thin film manufacturing apparatus may improve uniformity of the thin film formed on the substrate.

公开(公告)号：US20220122824A1

公开(公告)日：2022-04-21

申请号：US17495796

申请日：2021-10-06

Applicant: AP SYSTEMS INC.

Inventor： Byoung Il Lee ,  Chang Kyo Kim ,  Chang Min Kwon ,  Seung Won Yu

IPC: H01J37/32 ,  C23C16/509

Abstract: The present disclosure relates to a thin film manufacturing apparatus including a chamber having an inner process space of a substrate, a substrate support unit connected to the chamber to support the substrate in the chamber, a heat source unit connected to the chamber and disposed opposite to the substrate support unit, a plasma generation unit connected to one side of the chamber to supply radicals between the substrate support unit and the heat source unit, and a baffle connected to the chamber and including a movement passage of the radicals therein and a plurality of first exhaust holes communicating with the movement passage, which are formed in a top surface thereof. The thin film manufacturing apparatus may improve uniformity of the thin film formed on the substrate.