公开(公告)号：US11008647B2

公开(公告)日：2021-05-18

申请号：US16258766

申请日：2019-01-28

Applicant: Applied Materials, Inc.

Inventor： Karl Armstrong ,  Jinxin Fu

IPC: C23C14/08 ,  C23C14/34 ,  C23C14/58 ,  C23C14/00

Abstract: Embodiments described herein provide methods of forming amorphous or nano-crystalline ceramic films. The methods include depositing a ceramic layer on a substrate using a physical vapor deposition (PVD) process, discontinuing the PVD process when the ceramic layer has a predetermined layer thickness, sputter etching the ceramic layer for a predetermined period of time, and repeating the depositing the ceramic layer using the PVD process, the discontinuing the PVD process, and the sputter etching the ceramic layer until a ceramic film with a predetermined film thickness is formed.

公开(公告)号：US10269593B2

公开(公告)日：2019-04-23

申请号：US14771494

申请日：2014-03-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Joe Griffith Cruz ,  Hanh Nguyen ,  Randy Vrana ,  Karl Armstrong

IPC: H01L21/67 ,  H01L21/687 ,  C23C16/27

Abstract: Apparatus for coupling a hot wire source to a process chamber is provided herein. In some embodiments, an apparatus for coupling a hot wire source to a process chamber may include: a housing having an open end and a through hole formed through a top and a bottom of the housing; and a filament assembly configured to be disposed within the housing, the filament assembly having a frame and a plurality of filaments disposed across the frame, wherein the plurality of filaments of the filament assembly are substantially parallel with the top and the bottom of the housing and at least a portion of the plurality of filaments are disposed within the through hole of the housing when the filament assembly is disposed within the housing.

公开(公告)号：US10944103B2

公开(公告)日：2021-03-09

申请号：US16150111

申请日：2018-10-02

Applicant: Applied Materials, Inc.

Inventor： Girish Kumar Gopalakrishnan Nair ,  Subramanya P. Herle ,  Karl Armstrong

IPC: H01M4/36 ,  H01M4/38 ,  H01M4/62 ,  H01M4/66 ,  H01M4/04 ,  H01M4/134 ,  H01M4/02

Abstract: Implementations described herein generally relate to metal electrodes, more specifically lithium-containing anodes, high performance electrochemical devices, such as secondary batteries, including the aforementioned lithium-containing electrodes, and methods for fabricating the same. In one implementation, an anode electrode structure is provided. The anode electrode structure comprises a current collector comprising copper. The anode electrode structure further comprises a lithium metal film formed on the current collector. The anode electrode structure further comprises a solid electrolyte interface (SEI) film stack formed on the lithium metal film. The SEI film stack comprises a chalcogenide film formed on the lithium metal film. In one implementation, the SEI film stack further comprises a lithium oxide film formed on the chalcogenide film. In one implementation, the SEI film stack further comprises a lithium carbonate film formed on the lithium oxide film.