公开(公告)号：US08921235B2

公开(公告)日：2014-12-30

申请号：US13834508

申请日：2013-03-15

Applicant: Applied Materials Inc.

Inventor： Kiran V. Thadani ,  Jingjing Xu ,  Abhijit Basu Mallick ,  Joe Griffith Cruz ,  Nitin K. Ingle ,  Pravin K. Narwankar

IPC: H01L21/00 ,  H01L21/20

CPC classification number: H01L21/2015 ,  C23C16/045 ,  C23C16/26 ,  C23C16/30 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76837 ,  H01L2221/1047

Abstract: A method of forming and controlling air gaps between adjacent raised features on a substrate includes forming a silicon-containing film in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming carbon-containing material on top of the silicon-containing film and forming a second film over the carbon-containing material using a flowable deposition process. The second film fills an upper region between the adjacent raised features. The method also includes curing the materials at an elevated temperature for a period of time to form the air gaps between the adjacent raised features. The thickness and number layers of films can be used to control the thickness, vertical position and number of air gaps.

Abstract translation: 在衬底上形成和控制相邻凸起特征之间的空气间隙的方法包括：使用可流动沉积工艺在邻近凸起特征之间的底部区域中形成含硅膜。 该方法还包括在含硅膜的顶部上形成含碳材料，并使用可流动的沉积工艺在含碳材料上形成第二膜。 第二膜填充相邻凸起特征之间的上部区域。 该方法还包括在升高的温度下固化材料一段时间以形成相邻凸起特征之间的气隙。 膜的厚度和数量层可用于控制厚度，垂直位置和气隙数量。

公开(公告)号：US09416450B2

公开(公告)日：2016-08-16

申请号：US14052321

申请日：2013-10-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Hanh D. Nguyen ,  Joe Griffith Cruz

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/27

CPC classification number: C23C16/45565 ,  C23C16/271 ,  C23C16/276 ,  C23C16/44

Abstract: Embodiments of process chambers and methods for performing HWCVD processes within such process chambers and depositing a thin film from two or more source compounds on a surface of a substrate are provided. In some embodiments, the process chamber includes a showerhead assembly disposed between a metal filament assembly and a substrate processing zone. The showerhead assembly includes a showerhead body and a dual-zone face plate with a plurality of first channels and second channels therein. A first source compound is delivered through the metal filament assembly to form radicals of the first source compound and pass through the first channels into the substrate processing zone without forming any plasma. A second source compound is delivered through the showerhead body into the second channels of the dual-zone face plate without passing through the metal filament assembly and without contacting the radicals until reaching the substrate processing zone.

Abstract translation: 提供了处理室的实施例以及用于在这些处理室内执行HWCVD工艺的方法和在基板的表面上从两种或更多种源化合物沉积薄膜。 在一些实施例中，处理室包括布置在金属丝组件和衬底处理区之间的喷头组件。 淋浴头组件包括喷头体和双面面板，其中具有多个第一通道和第二通道。 第一源化合物通过金属丝组件输送以形成第一源化合物的自由基，并且通过第一通道进入衬底处理区而不形成任何等离子体。 第二源化合物通过喷头体输送到双区面板的第二通道中，而不通过金属丝组件，并且不与自由基接触直至到达衬底处理区。

公开(公告)号：US20140248754A1

公开(公告)日：2014-09-04

申请号：US13834508

申请日：2013-03-15

Applicant: APPLIED MATERIALS INC.

Inventor： Kiran V. Thadani ,  Jingjing Xu ,  Abhijit Basu Mallick ,  Joe Griffith Cruz ,  Nitin K. Ingle ,  Pravin K. Narwankar

IPC: H01L21/20

CPC classification number: H01L21/2015 ,  C23C16/045 ,  C23C16/26 ,  C23C16/30 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76837 ,  H01L2221/1047

Abstract: A method of forming and controlling air gaps between adjacent raised features on a substrate includes forming a silicon-containing film in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming carbon-containing material on top of the silicon-containing film and forming a second film over the carbon-containing material using a flowable deposition process. The second film fills an upper region between the adjacent raised features. The method also includes curing the materials at an elevated temperature for a period of time to form the air gaps between the adjacent raised features. The thickness and number layers of films can be used to control the thickness, vertical position and number of air gaps.

Abstract translation: 在衬底上形成和控制相邻凸起特征之间的空气间隙的方法包括：使用可流动沉积工艺在邻近凸起特征之间的底部区域中形成含硅膜。 该方法还包括在含硅膜的顶部上形成含碳材料，并使用可流动的沉积工艺在含碳材料上形成第二膜。 第二膜填充相邻凸起特征之间的上部区域。 该方法还包括在升高的温度下固化材料一段时间以形成相邻凸起特征之间的气隙。 膜的厚度和数量层可用于控制厚度，垂直位置和气隙数量。

公开(公告)号：US10269593B2

公开(公告)日：2019-04-23

申请号：US14771494

申请日：2014-03-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Joe Griffith Cruz ,  Hanh Nguyen ,  Randy Vrana ,  Karl Armstrong

IPC: H01L21/67 ,  H01L21/687 ,  C23C16/27

Abstract: Apparatus for coupling a hot wire source to a process chamber is provided herein. In some embodiments, an apparatus for coupling a hot wire source to a process chamber may include: a housing having an open end and a through hole formed through a top and a bottom of the housing; and a filament assembly configured to be disposed within the housing, the filament assembly having a frame and a plurality of filaments disposed across the frame, wherein the plurality of filaments of the filament assembly are substantially parallel with the top and the bottom of the housing and at least a portion of the plurality of filaments are disposed within the through hole of the housing when the filament assembly is disposed within the housing.