公开(公告)号：US12191198B2

公开(公告)日：2025-01-07

申请号：US17002220

申请日：2020-08-25

Applicant: Applied Materials, Inc.

Inventor： Feihu Wang ,  Joung Joo Lee ,  Xi Cen ,  Zhibo Yuan ,  Wei Lei ,  Kai Wu ,  Chunming Zhou ,  Zhebo Chen

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L21/02 ,  H01L23/528

Abstract: Apparatus and methods to provide electronic devices comprising tungsten film stacks are provided. A tungsten liner formed by physical vapor deposition is filled with a tungsten film formed by chemical vapor deposition directly over the tungsten liner.

公开(公告)号：US11678589B2

公开(公告)日：2023-06-13

申请号：US17178188

申请日：2021-02-17

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Shriram Mangipudi ,  Mohammad Kamruzzaman Chowdhury ,  Shane Lavan ,  Zhebo Chen ,  Yong Cao ,  Nag B. Patibandla

IPC: H10N60/01 ,  H01L39/24

CPC classification number: H01L39/2416 ,  H01L39/2406

Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

公开(公告)号：US20250118563A1

公开(公告)日：2025-04-10

申请号：US18377619

申请日：2023-10-06

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Zhihui Liu ,  Shih Chung Chen ,  Haoyan Sha ,  Alexander Jansen ,  Zhebo Chen ,  Janardhan Devrajan ,  Tza-Jing Gung

IPC: H01L21/285 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: One or more embodiments of the disclosure are directed to methods of forming structures that are useful for FEOL and BEOL processes. Embodiments of the present disclosure advantageously provide methods of depositing a gapfill material, such as titanium nitride (TiN), in high aspect ratio (AR) structures with small dimensions. Some embodiments advantageously provide seam-free high-quality TiN films to fill high AR trenches with small dimensions. Embodiments of the present disclosure advantageously provide methods of filling 3D structures, such as FinFETs, GAAs, and the like, with a gapfill material without creating a seam. One or more embodiments include selective deposition processes using a carbon (C) layer in order to provide seam-free TiN gapfill in 3D structures, such as GAA devices.

公开(公告)号：US11778926B2

公开(公告)日：2023-10-03

申请号：US17883508

申请日：2022-08-08

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Zihao Yang ,  Nag B. Patibandla ,  Ludovic Godet ,  Yong Cao ,  Daniel Lee Diehl ,  Zhebo Chen

IPC: H01L21/67 ,  H10N60/01 ,  C23C14/54 ,  C23C14/34 ,  H10N60/12 ,  H10N60/85 ,  G01J1/44

CPC classification number: H10N60/0941 ,  C23C14/3464 ,  C23C14/54 ,  H10N60/124 ,  H10N60/855 ,  G01J1/44 ,  G01J2001/442

Abstract: A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.

公开(公告)号：US11437559B2

公开(公告)日：2022-09-06

申请号：US16823206

申请日：2020-03-18

Applicant: Applied Materials, Inc

Inventor： Mingwei Zhu ,  Zihao Yang ,  Nag B. Patibandla ,  Ludovic Godet ,  Yong Cao ,  Daniel Lee Diehl ,  Zhebo Chen

IPC: H01L21/3205 ,  H01L39/24 ,  H01L39/12 ,  H01L39/22 ,  C23C14/54 ,  C23C14/34 ,  G01J1/44

Abstract: A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.

公开(公告)号：US20220013708A1

公开(公告)日：2022-01-13

申请号：US17178190

申请日：2021-02-17

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Shriram Mangipudi ,  Mohammad Kamruzzaman Chowdhury ,  Shane Lavan ,  Zhebo Chen ,  Yong Cao ,  Nag B. Patibandla

IPC: H01L39/24

Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate at a first temperature, the seed layer being a nitride of a first metal, reducing the temperature of the substrate to a second temperature that is lower than the first temperature, increasing the temperature of the substrate to a third temperature that is higher than the first temperature to form a modified seed layer, and depositing a metal nitride superconductive layer directly on the modified seed layer at the third temperature, the superconductive layer being a nitride of a different second metal.

公开(公告)号：US20220013707A1

公开(公告)日：2022-01-13

申请号：US17178188

申请日：2021-02-17

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Shriram Mangipudi ,  Mohammad Kamruzzaman Chowdhury ,  Shane Lavan ,  Zhebo Chen ,  Yong Cao ,  Nag B. Patibandla

IPC: H01L39/24

Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

公开(公告)号：US11062900B2

公开(公告)日：2021-07-13

申请号：US16699712

申请日：2019-12-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Luping Li ,  Shih Chung Chen ,  Kazuya Daito ,  Lin Dong ,  Zhebo Chen ,  Yixiong Yang ,  Steven Hung

IPC: H01L21/02 ,  H01L21/311

Abstract: Methods and apparatus for forming a semiconductor structure with a scaled effective oxide thickness is disclosed. In embodiments, a method includes depositing amorphous silicon capping layer having a first surface atop a first surface of a titanium nitride (TiN) layer, wherein the titanium nitride layer is atop a first surface of a high-k dielectric layer disposed within a film stack; contacting the first surface of the amorphous silicon capping layer with a nitrogen containing gas; and annealing the film stack.

公开(公告)号：US20200299830A1

公开(公告)日：2020-09-24

申请号：US16823182

申请日：2020-03-18

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Zihao Yang ,  Nag B. Patibandla ,  Ludovic Godet ,  Yong Cao ,  Daniel Lee Diehl ,  Zhebo Chen

IPC: C23C14/56 ,  C23C14/06 ,  C23C14/34 ,  H01J37/34

Abstract: A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber. The second flow rate ratio is less than the first flow rate ratio.

公开(公告)号：US12185643B2

公开(公告)日：2024-12-31

申请号：US18177096

申请日：2023-03-01

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Shriram Mangipudi ,  Mohammad Kamruzzaman Chowdhury ,  Shane Lavan ,  Zhebo Chen ,  Yong Cao ,  Nag B. Patibandla

IPC: H10N60/85 ,  G02B6/12 ,  H10N60/12

Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.