公开(公告)号：US11678589B2

公开(公告)日：2023-06-13

申请号：US17178188

申请日：2021-02-17

申请人： Applied Materials, Inc.

发明人： Zihao Yang ,  Mingwei Zhu ,  Shriram Mangipudi ,  Mohammad Kamruzzaman Chowdhury ,  Shane Lavan ,  Zhebo Chen ,  Yong Cao ,  Nag B. Patibandla

IPC分类号： H10N60/01 ,  H01L39/24

CPC分类号： H01L39/2416 ,  H01L39/2406

摘要： A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

公开(公告)号：US20180247974A1

公开(公告)日：2018-08-30

申请号：US15745914

申请日：2016-07-21

申请人： Massachusetts Institute of Technology

发明人： William D. Oliver ,  Rabindra N. Das ,  David J. Hover ,  Danna Rosenberg ,  Xhovalin Miloshi ,  Vladimir Bolkhovsky ,  Jonilyn L. Yoder ,  Corey W. Stull ,  Mark A. Gouker

IPC分类号： H01L27/18 ,  H01L39/22 ,  H01L39/24 ,  H01L39/04 ,  H01P7/08 ,  G06N99/00

CPC分类号： H01L27/18 ,  G06N10/00 ,  H01L39/045 ,  H01L39/223 ,  H01L39/2416 ,  H01L39/2493 ,  H01P7/086

摘要： A superconducting integrated circuit includes at least one superconducting resonator, including a substrate, a conductive layer disposed over a surface of the substrate with the conductive layer including at least one conductive material including a substantially low stress polycrystalline Titanium Nitride (TiN) material having an internal stress less than about two hundred fifty MPa (magnitude) such that the at least one superconducting resonator and/or qubit (hereafter called “device”) is provided as a substantially high quality factor, low loss superconducting device.

公开(公告)号：US20140094372A1

公开(公告)日：2014-04-03

申请号：US13633647

申请日：2012-10-02

申请人： The Trustees of Columbia University in the City of New York ,  Massachusetts Institute of Technology

发明人： Dirk Englund ,  Jacob Mower ,  Faraz Najafi ,  Xiaolong Hu ,  Karl K. Berggren

IPC分类号： H01L31/0352 ,  H01L31/032

CPC分类号： H01L31/035227 ,  B82Y15/00 ,  G01J1/42 ,  G01J5/0803 ,  G01J5/0821 ,  G01J5/0853 ,  H01L31/032 ,  H01L39/10 ,  H01L39/12 ,  H01L39/16 ,  H01L39/2403 ,  H01L39/2416

摘要： Compactly-integrated electronic structures and associated systems and methods are provided. Certain embodiments relate to the ability to integrate nanowire-based detectors with optical components.

摘要翻译： 提供紧凑集成的电子结构及相关系统和方法。 某些实施例涉及将基于纳米线的检测器与光学部件集成的能力。

公开(公告)号：US06836955B2

公开(公告)日：2005-01-04

申请号：US10282354

申请日：2002-10-29

申请人： James Wong

发明人： James Wong

IPC分类号： C23C2/02 ,  C23C2/08 ,  C23C2/28 ,  H01L39/24 ,  H01L29/24

CPC分类号： C23C2/02 ,  C23C2/08 ,  C23C2/28 ,  H01L39/2409 ,  H01L39/2416 ,  Y10S505/928 ,  Y10S505/93 ,  Y10T29/49014

摘要： A niobium-based superconductor is manufactured by establishing multiple niobium components in a billet of a ductile metal, working the composite billet through a series of reduction steps to form the niobium components into elongated elements, each niobium element having a thickness on the order of 1 to 25 microns, surrounding the billet prior to the last reduction step with a porous confining layer of an acid resistant metal, immersing the confined billet in an acid or a high temperature liquid metal to remove the ductile metal from between the niobium elements while the niobium elements remain confined by said porous layer, exposing the confined mass of niobium elements to a material capable of reacting with Nb to form a superconductor.

摘要翻译： 铌基超导体通过在延性金属的坯料中建立多个铌组分来制造，通过一系列还原步骤来加工复合坯料，以将铌组分形成为细长元件，每个铌元素的厚度大约为1 至25微米，在最后的还原步骤之前，用耐酸金属的多孔限制层围绕坯料，将受限制的坯料浸入酸或高温液态金属中，以从铌元素之间除去延性金属，而铌 元素仍然被所述多孔层限制，将约束的铌元素暴露于能够与Nb反应的材料以形成超导体。

公开(公告)号：US06384423B1

公开(公告)日：2002-05-07

申请号：US09499149

申请日：2000-02-07

申请人： George L. Kerber ,  Michael Leung

发明人： George L. Kerber ,  Michael Leung

IPC分类号： H01L2906

CPC分类号： H01L39/2416 ,  H01L27/18 ,  Y10S505/731 ,  Y10S505/82

摘要： The invention is a process for reducing roughness of a surface of a superconductor material (23) having an undesirable surface roughness (30 and 32) and a trilayer superconductor integrated circuit (100). The process for reducing roughness of a surface of superconductor material having an undesirable surface roughness includes coating the surface with an oxide layer (40) to fill the undesirable surface roughness and to produce an exposed oxide surface (42) with a roughness less than the surface roughness; and etching the exposed oxide surface to remove a thickness of the oxide layer followed by removing at least a portion of the oxide layer filling the undesirable surface roughness and a portion of the surface of the superconductor material to produce an exposed etched surface (44) comprised of at least the superconductor material which has a surface roughness less than the undesirable surface roughness.

摘要翻译： 本发明是一种减少具有不希望的表面粗糙度（30,32）和三层超导体集成电路（100）的超导材料（23）表面的粗糙度的方法。 用于减少具有不期望的表面粗糙度的超导体材料的表面的粗糙度的方法包括用氧化物层（40）涂覆表面以填充不期望的表面粗糙度并产生粗糙度小于表面的暴露的氧化物表面（42） 粗糙度 并且蚀刻暴露的氧化物表面以去除氧化物层的厚度，随后除去填充不期望的表面粗糙度的氧化物层的至少一部分和超导体材料的表面的一部分以产生暴露的蚀刻表面（44） 至少具有小于不期望的表面粗糙度的表面粗糙度的超导体材料。

公开(公告)号：US4596207A

公开(公告)日：1986-06-24

申请号：US664098

申请日：1984-10-24

申请人： August F. Witt ,  Ramaswamy V. Raman

发明人： August F. Witt ,  Ramaswamy V. Raman

IPC分类号： C30B11/00 ,  C30B15/00 ,  H01L31/18 ,  H01L39/24 ,  B05C5/00 ,  B22D11/00

CPC分类号： H01L39/2416 ,  C30B11/00 ,  C30B15/007 ,  C30B29/60 ,  C30B29/605 ,  H01L31/18 ,  Y10S505/813 ,  Y10S505/826

摘要： A method of forming, by melt-spinning techniques, a laminated ribbon structure consisting, for example, of a semiconductor disposed on a metal ribbon substrate. The substrate may be 10-50 .mu.m thick and the semiconductor may be 10-50 .mu.m thick, for example; typically the ribbon width is about one millimeter to several centimeters.

摘要翻译： 通过熔融纺丝技术形成由例如设置在金属带状基材上的半导体构成的层叠带状结构体的方法。 衬底可以是10-50μm厚，并且半导体例如可以是10-50μm厚; 丝带宽度通常为约1毫米至几厘米。

公开(公告)号：US20180102469A1

公开(公告)日：2018-04-12

申请号：US15684337

申请日：2017-08-23

申请人： Massachusetts Institute of Technology

发明人： Rabindra N. Das ,  Eric A. Dauler

IPC分类号： H01L39/04 ,  H01L27/18 ,  H01L39/12 ,  H01L23/498 ,  H01L25/00 ,  H01L39/02 ,  H01L25/065 ,  H01L39/24

CPC分类号： H01L39/06 ,  G06N10/00 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49888 ,  H01L23/5386 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/167 ,  H01L25/50 ,  H01L27/18 ,  H01L39/025 ,  H01L39/045 ,  H01L39/12 ,  H01L39/223 ,  H01L39/2416 ,  H01L39/2493 ,  H01L2224/10 ,  H01L2224/13109 ,  H01L2224/16145 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45147 ,  H01L2224/45179 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06548 ,  H01L2225/06589 ,  H01L2924/13055 ,  H01P7/086 ,  H01L2924/00 ,  H01L2924/00014

摘要： A cryogenic electronic package includes a first superconducting multi-chip module (SMCM), a superconducting interposer, a second SMCM and a superconducting semiconductor structure. The interposer is disposed over and coupled to the first SMCM, the second SMCM is disposed over and coupled to the interposer, and the superconducting semiconductor structure is disposed over and coupled to the second SMCM. The second SMCM and the superconducting semiconductor structure are electrically coupled to the first SMCM through the interposer. A method of fabricating a cryogenic electronic package is also provided.

公开(公告)号：US5194236A

公开(公告)日：1993-03-16

申请号：US730410

申请日：1991-07-16

申请人： Mitsue Koizumi ,  Yoshinari Miyamoto ,  Manshi Ooyanagi ,  Kimiaki Tanihata ,  Osamu Yamada ,  Ichiro Matsubara ,  Hiroshi Yamashita

发明人： Mitsue Koizumi ,  Yoshinari Miyamoto ,  Manshi Ooyanagi ,  Kimiaki Tanihata ,  Osamu Yamada ,  Ichiro Matsubara ,  Hiroshi Yamashita

IPC分类号： C04B35/00 ,  C01B21/06 ,  C01G1/00 ,  C04B35/45 ,  H01B12/00 ,  H01B13/00 ,  H01L39/24

CPC分类号： C01B21/0617 ,  H01L39/2416 ,  C01P2004/61 ,  C01P2006/40 ,  Y10S505/81 ,  Y10S505/815

摘要： Process for preparing NbN superconducting material, characterized in that a bulk Nb is placed in powder including at least one metal which can be nitriding-burned, and then the powder is heated to be nitriding-burned in pressurized N.sub.2 atmosphere so that the bulk Nb is nitrided by the nitriding-burning of the powder.

摘要翻译： 制备NbN超导材料的方法，其特征在于，将大块Nb置于含有至少一种能够进行氮化燃烧的金属的粉末中，然后在加压的N 2气氛中将粉末加热至氮化烧结，使得本体Nb为 通过粉末的氮化燃烧氮化。

公开(公告)号：US4419125A

公开(公告)日：1983-12-06

申请号：US436103

申请日：1982-10-22

申请人： Robert G. Charles ,  John R. Gavaler

发明人： Robert G. Charles ,  John R. Gavaler

IPC分类号： H01L39/12 ,  H01L39/24

CPC分类号： H01L39/2409 ,  H01L39/12 ,  H01L39/2412 ,  H01L39/2416 ,  Y10S505/807 ,  Y10S505/815 ,  Y10S75/953 ,  Y10T29/49014

摘要： This is a method for preparing submicron-superconducting particles for use in forming a ductile superconductor wire from brittle superconducting compounds. The method utilizes preparing a mixture of solid metal halides containing essentially stoichiometric proportions of metallic components for the desired superconducting compound, co-reducing the mixture with an excess of liquid alkali metal, removing the alkali metal halide produced and the excess alkali metal from the superconducting powder, and annealing the superconducting powder to substantially remove absorbed hydrogen as indicated by the reduction of lattice parameters to essentially nominal values.

摘要翻译： 这是一种制备用于从脆性超导化合物形成延性超导线的亚微米超导颗粒的方法。 该方法利用制备含有基本上化学计量比的用于所需超导化合物的化学计量比的金属组分的固体金属卤化物的混合物，用过量的液态碱金属共同还原混合物，从超导中除去产生的碱金属卤化物和过量的碱金属 粉末，并退火超导粉末以基本上除去吸收的氢，如由晶格参数的降低至基本上标称值所示。

公开(公告)号：US4365005A

公开(公告)日：1982-12-21

申请号：US126762

申请日：1980-03-03

申请人： August F. Witt ,  Ramaswamy V. Raman

发明人： August F. Witt ,  Ramaswamy V. Raman

IPC分类号： C30B11/00 ,  C30B15/00 ,  H01L31/18 ,  H01L39/24 ,  H01L43/12 ,  B32B15/04 ,  C23C1/00 ,  H01F1/04

CPC分类号： H01L43/12 ,  C30B11/00 ,  C30B15/007 ,  C30B29/60 ,  C30B29/605 ,  H01L31/182 ,  H01L31/184 ,  H01L39/2409 ,  H01L39/2416 ,  Y02E10/544 ,  Y02E10/546 ,  Y02P70/521 ,  Y10S428/90 ,  Y10S428/939 ,  Y10S505/813 ,  Y10T428/12438 ,  Y10T428/12465 ,  Y10T428/12528 ,  Y10T428/12674 ,  Y10T428/12681 ,  Y10T428/12708 ,  Y10T428/12722 ,  Y10T428/12729 ,  Y10T428/24942

摘要： A method of forming, by melt-spinning techniques, a laminated ribbon structure consisting, for example, of a semiconductor disposed on a metal ribbon substrate. The substrate may be 10-50 .mu.m thick and the semiconductor may be 10-50 .mu.m thick, for example; typically the ribbon width is about one millimeter to several centimeters.