公开(公告)号：US20230167544A1

公开(公告)日：2023-06-01

申请号：US17990779

申请日：2022-11-21

Applicant: ASM IP Holding B.V.

Inventor： Ling Chi Hwang ,  Makoto Igarashi ,  Aurelie Kuroda

IPC: C23C16/04 ,  C23C16/34 ,  C23C16/513

CPC classification number: C23C16/045 ,  C23C16/347 ,  C23C16/513

Abstract: A method and system for forming a conformal silicon carbon nitride layer overlying a gap on a surface of a substrate are disclosed. Exemplary methods include forming conformal silicon carbon nitride material within the gap and treating the conformal silicon carbon nitride material to form treated silicon carbon nitride material. The deposition time is relatively short to mitigate flow of the conformal silicon carbon nitride material within the gap.

公开(公告)号：US12031205B2

公开(公告)日：2024-07-09

申请号：US17990779

申请日：2022-11-21

Applicant: ASM IP Holding B.V.

Inventor： Ling Chi Hwang ,  Makoto Igarashi ,  Aurelie Kuroda

IPC: C23C16/36 ,  C23C16/04 ,  C23C16/34 ,  C23C16/513

CPC classification number: C23C16/045 ,  C23C16/347 ,  C23C16/513

Abstract: A method and system for forming a conformal silicon carbon nitride layer overlying a gap on a surface of a substrate are disclosed. Exemplary methods include forming conformal silicon carbon nitride material within the gap and treating the conformal silicon carbon nitride material to form treated silicon carbon nitride material. The deposition time is relatively short to mitigate flow of the conformal silicon carbon nitride material within the gap.

公开(公告)号：US20230335392A1

公开(公告)日：2023-10-19

申请号：US18300301

申请日：2023-04-13

Applicant: ASM IP HOLDING B.V.

Inventor： Shinya Yoshimoto ,  Jhoelle Roche Guhit ,  Makoto Igarashi ,  Hideaki Fukuda ,  Aurelie Kuroda ,  Timothee Blanquart ,  Takahiro Onuma

IPC: H01L21/02 ,  C23C16/36 ,  C23C16/455 ,  C23C16/48 ,  C23C16/52

CPC classification number: H01L21/02167 ,  C23C16/36 ,  C23C16/4554 ,  C23C16/482 ,  C23C16/52 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments relate to cyclical processors for gap-fill in which deposition is followed by a thermal anneal and ultraviolet treatment and repeated. In some embodiments, the deposition, thermal anneal, and ultraviolet treatment are carried out in separate stations. In some embodiments, a second station is heated to a higher temperature than a first station. In some embodiments, a separate module is used for curing.