公开(公告)号：US12031205B2

公开(公告)日：2024-07-09

申请号：US17990779

申请日：2022-11-21

Applicant: ASM IP Holding B.V.

Inventor： Ling Chi Hwang ,  Makoto Igarashi ,  Aurelie Kuroda

IPC: C23C16/36 ,  C23C16/04 ,  C23C16/34 ,  C23C16/513

CPC classification number: C23C16/045 ,  C23C16/347 ,  C23C16/513

Abstract: A method and system for forming a conformal silicon carbon nitride layer overlying a gap on a surface of a substrate are disclosed. Exemplary methods include forming conformal silicon carbon nitride material within the gap and treating the conformal silicon carbon nitride material to form treated silicon carbon nitride material. The deposition time is relatively short to mitigate flow of the conformal silicon carbon nitride material within the gap.

公开(公告)号：US20230335392A1

公开(公告)日：2023-10-19

申请号：US18300301

申请日：2023-04-13

Applicant: ASM IP HOLDING B.V.

Inventor： Shinya Yoshimoto ,  Jhoelle Roche Guhit ,  Makoto Igarashi ,  Hideaki Fukuda ,  Aurelie Kuroda ,  Timothee Blanquart ,  Takahiro Onuma

IPC: H01L21/02 ,  C23C16/36 ,  C23C16/455 ,  C23C16/48 ,  C23C16/52

CPC classification number: H01L21/02167 ,  C23C16/36 ,  C23C16/4554 ,  C23C16/482 ,  C23C16/52 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments relate to cyclical processors for gap-fill in which deposition is followed by a thermal anneal and ultraviolet treatment and repeated. In some embodiments, the deposition, thermal anneal, and ultraviolet treatment are carried out in separate stations. In some embodiments, a second station is heated to a higher temperature than a first station. In some embodiments, a separate module is used for curing.

公开(公告)号：US20220119944A1

公开(公告)日：2022-04-21

申请号：US17451299

申请日：2021-10-18

Applicant: ASM IP HOLDING B.V.

Inventor： Shinya Yoshimoto ,  Takahiro Onuma ,  Makoto Igarashi ,  Yukihiro Mori ,  Hideaki Fukuda ,  Rene Henricus Jozef Vervuurt ,  Timothee Blanquart

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/52

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.

公开(公告)号：US20210102289A1

公开(公告)日：2021-04-08

申请号：US17039874

申请日：2020-09-30

Applicant: ASM IP Holding B.V.

Inventor： Naoto Tsuji ,  Ippei Yanagisawa ,  Miho Shimotori ,  Makoto Igarashi

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/505 ,  H01J37/32

Abstract: Examples of a substrate processing device include an annular distribution ring, a plurality of connection plates continued to the distribution ring and having non-uniform impedances, a shower plate electrically connected to the plurality of connection plates, and a stage provided below the shower plate so as to face the shower plate.

公开(公告)号：US20240060174A1

公开(公告)日：2024-02-22

申请号：US18234549

申请日：2023-08-16

Applicant: ASM IP Holding B.V.

Inventor： Makoto Igarashi ,  Shinya Yoshimoto ,  Jhoelle Roche Guhit ,  Ling Chi Hwang

IPC: C23C16/04

CPC classification number: C23C16/045

Abstract: Methods and systems of forming material within a recess are disclosed. Exemplary methods include forming a flowable material at a first temperature (T1) within a reaction chamber, the flowable material forming deposited material within the recess, treating the deposited material to form treated material, and heating the substrate including the treated material at a second temperature (T2) to remove a portion of the deposited material.

公开(公告)号：US20230399745A1

公开(公告)日：2023-12-14

申请号：US18205766

申请日：2023-06-05

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Makoto Igarashi ,  Ranjit Borude

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/56 ,  C23C16/52 ,  H01J37/32 ,  C23C16/511 ,  C23C16/505

CPC classification number: C23C16/45557 ,  C23C16/401 ,  C23C16/56 ,  C23C16/52 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32091 ,  C23C16/511 ,  C23C16/505

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments relate to cyclical processes for gap-fill in which deposition is followed by a microwave plasma curing treatment and repeated. In some embodiments, the deposition and microwave plasma curing treatment are carried out in separate stations. In some embodiments, a second station is heated to a higher temperature than a first station. In some embodiments, a separate module is used for high temperature curing.

公开(公告)号：US20230167544A1

公开(公告)日：2023-06-01

申请号：US17990779

申请日：2022-11-21

Applicant: ASM IP Holding B.V.

Inventor： Ling Chi Hwang ,  Makoto Igarashi ,  Aurelie Kuroda

IPC: C23C16/04 ,  C23C16/34 ,  C23C16/513

CPC classification number: C23C16/045 ,  C23C16/347 ,  C23C16/513

Abstract: A method and system for forming a conformal silicon carbon nitride layer overlying a gap on a surface of a substrate are disclosed. Exemplary methods include forming conformal silicon carbon nitride material within the gap and treating the conformal silicon carbon nitride material to form treated silicon carbon nitride material. The deposition time is relatively short to mitigate flow of the conformal silicon carbon nitride material within the gap.

公开(公告)号：US11339476B2

公开(公告)日：2022-05-24

申请号：US17039874

申请日：2020-09-30

Applicant: ASM IP Holding B.V.

Inventor： Naoto Tsuji ,  Ippei Yanagisawa ,  Miho Shimotori ,  Makoto Igarashi

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/505 ,  C23C16/455 ,  C23C16/54

Abstract: Examples of a substrate processing device include an annular distribution ring, a plurality of connection plates continued to the distribution ring and having non-uniform impedances, a shower plate electrically connected to the plurality of connection plates, and a stage provided below the shower plate so as to face the shower plate.

公开(公告)号：US20220319831A1

公开(公告)日：2022-10-06

申请号：US17705158

申请日：2022-03-25

Applicant: ASM IP Holding B.V.

Inventor： Yuko Kengoyama ,  Makoto Igarashi

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34 ,  H01J37/32

Abstract: Methods of forming treated silicon nitride layers are disclosed. Exemplary methods include forming a silicon nitride layer overlying the substrate by providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a nitrogen reactant to the reaction chamber for a reactant pulse period, during a deposition process applying a first plasma power having a first frequency for a first plasma power period, and during a treatment step, applying a second plasma power having a second frequency for a second plasma power period.

公开(公告)号：US20250054753A1

公开(公告)日：2025-02-13

申请号：US18795432

申请日：2024-08-06

Applicant: ASM IP Holding B.V.

Inventor： KiHun Kim ,  SangHeon Yong ,  Sungha Choi ,  JuHyuk Park ,  Jihye Yang ,  Jaewoo Jeong ,  Shinya Yoshimoto ,  Makoto Igarashi

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/505 ,  C23C16/56

Abstract: Provided is a method of filling a gap with a flowable oxide film. In one embodiment of the disclosure, the method comprises forming a flowable silicon nitride film, followed by converting the silicon nitride film in a silicon oxide film. The silicon nitride film may be formed by supplying an oligomeric silicon source and a nitrogen source activated by a power. The silicon nitride film may be converted into the silicon oxide film by supplying an oxygen source while applying a vacuum UV radiation. The vacuum UV radiation may be applied in a pulsed mode.