公开(公告)号：US12129546B2

公开(公告)日：2024-10-29

申请号：US17451299

申请日：2021-10-18

申请人： ASM IP HOLDING B.V.

发明人： Shinya Yoshimoto ,  Takahiro Onuma ,  Makoto Igarashi ,  Yukihiro Mori ,  Hideaki Fukuda ,  Rene Henricus Jozef Vervuurt ,  Timothee Blanquart

IPC分类号： C23C16/455 ,  C23C16/46 ,  C23C16/52

CPC分类号： C23C16/45527 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/46 ,  C23C16/52

摘要： In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.

公开(公告)号：US20170358482A1

公开(公告)日：2017-12-14

申请号：US15622510

申请日：2017-06-14

申请人： ASM IP HOLDING B.V.

发明人： Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/285

CPC分类号： H01L21/7685 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/32051 ,  H01L21/32055 ,  H01L21/76823 ,  H01L21/76826 ,  H01L21/76868 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53266

摘要： Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US10793946B1

公开(公告)日：2020-10-06

申请号：US16676017

申请日：2019-11-06

申请人： ASM IP Holding B.V.

发明人： Delphine Longrie ,  Antti Juhani Niskanen ,  Han Wang ,  Qi Xie ,  Jan Willem Maes ,  Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC分类号： C23C16/02 ,  C23C16/06 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/768 ,  H01L21/285 ,  C23C16/56

摘要： Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US10014212B2

公开(公告)日：2018-07-03

申请号：US15622510

申请日：2017-06-14

申请人： ASM IP HOLDING B.V.

发明人： Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC分类号： H01L21/768 ,  H01L21/285 ,  H01L23/532

CPC分类号： H01L21/7685 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3105 ,  H01L21/76823 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76868 ,  H01L21/76883 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53266

摘要： Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US20230335392A1

公开(公告)日：2023-10-19

申请号：US18300301

申请日：2023-04-13

申请人： ASM IP HOLDING B.V.

发明人： Shinya Yoshimoto ,  Jhoelle Roche Guhit ,  Makoto Igarashi ,  Hideaki Fukuda ,  Aurelie Kuroda ,  Timothee Blanquart ,  Takahiro Onuma

IPC分类号： H01L21/02 ,  C23C16/36 ,  C23C16/455 ,  C23C16/48 ,  C23C16/52

CPC分类号： H01L21/02167 ,  C23C16/36 ,  C23C16/4554 ,  C23C16/482 ,  C23C16/52 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348

摘要： In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments relate to cyclical processors for gap-fill in which deposition is followed by a thermal anneal and ultraviolet treatment and repeated. In some embodiments, the deposition, thermal anneal, and ultraviolet treatment are carried out in separate stations. In some embodiments, a second station is heated to a higher temperature than a first station. In some embodiments, a separate module is used for curing.

公开(公告)号：US20220119944A1

公开(公告)日：2022-04-21

申请号：US17451299

申请日：2021-10-18

申请人： ASM IP HOLDING B.V.

发明人： Shinya Yoshimoto ,  Takahiro Onuma ,  Makoto Igarashi ,  Yukihiro Mori ,  Hideaki Fukuda ,  Rene Henricus Jozef Vervuurt ,  Timothee Blanquart

IPC分类号： C23C16/455 ,  C23C16/46 ,  C23C16/52

摘要： In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.

公开(公告)号：US10041166B2

公开(公告)日：2018-08-07

申请号：US15795768

申请日：2017-10-27

申请人： ASM IP Holding B.V.

发明人： Delphine Longrie ,  Antti Juhani Niskanen ,  Han Wang ,  Qi Xie ,  Jan Willem Maes ,  Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC分类号： C23C16/02 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC分类号： C23C16/02 ,  C23C16/06 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76883

摘要： Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US09947582B1

公开(公告)日：2018-04-17

申请号：US15612962

申请日：2017-06-02

申请人： ASM IP HOLDING B.V.

发明人： Aurélie Kuroda ,  Shang Chen ,  Takahiro Onuma ,  Dai Ishikawa

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC分类号： H01L21/76888 ,  H01L21/76849 ,  H01L23/53238

摘要： Processes are provided herein for protecting metal thin films from oxidation when exposed to an oxidizing environment, such as the ambient atmosphere. The processes may comprise a protective treatment including exposing the metal thin film to a silicon-containing precursor at a temperature of about 200° C. or less in order to selectively adsorb a silicon-containing protective layer on the metal thin film. The silicon-containing protective layer may reduce or substantially prevent the underlying metal thin film from oxidation.

公开(公告)号：US09805974B1

公开(公告)日：2017-10-31

申请号：US15177198

申请日：2016-06-08

申请人： ASM IP Holding B.V.

发明人： Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC分类号： H01L21/768 ,  H01L21/3205 ,  H01L23/532

CPC分类号： H01L21/7685 ,  C23C16/04 ,  C23C16/08 ,  C23C16/4404 ,  C23C16/45523 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/32055 ,  H01L21/76823 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53228 ,  H01L23/53266

摘要： Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US20220122841A1

公开(公告)日：2022-04-21

申请号：US17451280

申请日：2021-10-18

申请人： ASM IP HOLDING B.V.

发明人： Timothee Blanquart ,  Takahiro Onuma ,  Shinya Yoshimoto ,  Charles Dezelah ,  Jihee Jeon

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/34

摘要： Methods and systems for manufacturing a structure comprising a substrate are provided herein. In some embodiments, the substrate comprises a plurality of recesses. The recesses may be at least partially filled with a gap filling fluid. The gap filling fluid may comprise an Si—N bond.