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公开(公告)号:US20250043416A1
公开(公告)日:2025-02-06
申请号:US18787053
申请日:2024-07-29
Applicant: ASM IP Holding B.V.
Inventor: Iordan Iordanov , Osama Khalil , Allen D'Ambra
IPC: C23C16/40 , C23C16/02 , C23C16/455 , C23C16/56
Abstract: Protected metallic components and reaction chambers including protected metallic components are disclosed. Exemplary methods for forming and utilizing protected metallic components are also disclosed. Protected metallic components include a conformal protective layer disposed over a non-planar surface of a metallic core.
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公开(公告)号:US20240198366A1
公开(公告)日:2024-06-20
申请号:US18540419
申请日:2023-12-14
Applicant: ASM IP Holding B.V.
Inventor: Dinkar Nandwana , Allen D'Ambra , Dinh Tran , Chen Ni , Gary Paulsen , Michael Samy Boulos Hanna Elkomos
CPC classification number: B05B1/3006 , B05B1/005 , B05B1/185
Abstract: Methods and apparatuses for measuring a flow conductance of a showerhead assembly are described. For example, a showerhead assembly may be seated in a housing. A gas source may be coupled to an intake port of the showerhead assembly and supply gas to the showerhead assembly via the intake port. A pressure controller may be coupled between the gas source and the showerhead assembly. The pressure controller may measure a flow throughput of the gas that passes through the pressure controller. The pressure controller may maintain the gas being supplied to the showerhead assembly at a first pressure value. A pressure transducer coupled to an exhaust port of the showerhead assembly may measure a second pressure value. A controller may determine a flow conductance of the showerhead assembly based on the flow throughput and the first and second pressure values.
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公开(公告)号:US20230184539A1
公开(公告)日:2023-06-15
申请号:US18076788
申请日:2022-12-07
Applicant: ASM IP Holding B.V.
Inventor: Dinkar Nandwana , Dinh Tran , Allen D'Ambra , Gary Powell
CPC classification number: G01B11/0683 , C23C16/4405 , C23C16/45536
Abstract: An endpoint detection system for use in detecting an endpoint of a refurbishment process for process chamber components. The refurbishment process involves use of an etchant bath to etch or clean chamber components after their use a reaction chamber in semiconductor processing to remove deposited materials including oxide films or the like. The endpoint detection system is configured to use measurements of reflected electromagnetic radiation from surfaces of the component in an etchant bath, transmitted electromagnetic radiation passing through holes in the chamber component while the component is in the etchant bath, or both to detect process endpoints. The process endpoints can coincide with a desired amount of removal of the deposited materials from surfaces and/or through holes in the chamber component. Upon detection of the endpoints, the chamber component can be removed from the etchant to limit over etching of materials from the chamber component to increase useful life.
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公开(公告)号:US20220168787A1
公开(公告)日:2022-06-02
申请号:US17537567
申请日:2021-11-30
Applicant: ASM IP Holding B.V.
Inventor: Dinkar Nandwana , Allen D'Ambra , Dinh Tran , Ankit Kimtee , Eric Shero
Abstract: Cleaning fixtures for cleaning a showerhead assembly are disclosure. The cleaning fixtures include: a fixture body incorporating three or more cavities, each cavity being separate from an adjacent cavity by a partition, and a number of channels associated with each cavity for fluidly connecting the cavities with an upper surface of the fixture body.
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公开(公告)号:US20230088313A1
公开(公告)日:2023-03-23
申请号:US17948674
申请日:2022-09-20
Applicant: ASM IP Holding, B.V.
Inventor: Herbert Terhorst , Dinkar Nandwana , Eric Shero , Allen D'Ambra , Jessica Akemi Cimada da Silva , Daner Abdula
Abstract: A gas distribution system having a first plurality of apertures to supply a gas source to a reaction chamber and a second plurality of apertures surrounding the first plurality of apertures and configured to remove the gas from the reaction chamber. In one embodiment, the second plurality of apertures may gradually increase in diameter as the distance from a main exhaust channel increases. Alternatively, or in addition, the angle spacing between adjacent apertures may gradually decrease as the distance from the main exhaust channel increases.
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