APPARATUS AND METHOD FOR MEASURING FLOW CONDUCTANCE OF SHOWERHEAD ASSEMBLY

    公开(公告)号:US20240198366A1

    公开(公告)日:2024-06-20

    申请号:US18540419

    申请日:2023-12-14

    CPC classification number: B05B1/3006 B05B1/005 B05B1/185

    Abstract: Methods and apparatuses for measuring a flow conductance of a showerhead assembly are described. For example, a showerhead assembly may be seated in a housing. A gas source may be coupled to an intake port of the showerhead assembly and supply gas to the showerhead assembly via the intake port. A pressure controller may be coupled between the gas source and the showerhead assembly. The pressure controller may measure a flow throughput of the gas that passes through the pressure controller. The pressure controller may maintain the gas being supplied to the showerhead assembly at a first pressure value. A pressure transducer coupled to an exhaust port of the showerhead assembly may measure a second pressure value. A controller may determine a flow conductance of the showerhead assembly based on the flow throughput and the first and second pressure values.

    ENDPOINT DETECTION METHOD FOR CHAMBER COMPONENT REFURBISHMENT

    公开(公告)号:US20230184539A1

    公开(公告)日:2023-06-15

    申请号:US18076788

    申请日:2022-12-07

    CPC classification number: G01B11/0683 C23C16/4405 C23C16/45536

    Abstract: An endpoint detection system for use in detecting an endpoint of a refurbishment process for process chamber components. The refurbishment process involves use of an etchant bath to etch or clean chamber components after their use a reaction chamber in semiconductor processing to remove deposited materials including oxide films or the like. The endpoint detection system is configured to use measurements of reflected electromagnetic radiation from surfaces of the component in an etchant bath, transmitted electromagnetic radiation passing through holes in the chamber component while the component is in the etchant bath, or both to detect process endpoints. The process endpoints can coincide with a desired amount of removal of the deposited materials from surfaces and/or through holes in the chamber component. Upon detection of the endpoints, the chamber component can be removed from the etchant to limit over etching of materials from the chamber component to increase useful life.

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