Batch furnace assembly and method of operating a batch furnace assembly

    公开(公告)号:US11971217B2

    公开(公告)日:2024-04-30

    申请号:US17844911

    申请日:2022-06-21

    Abstract: Batch furnace assembly for processing wafers, comprising a process chamber housing defining a process chamber and having a process chamber opening, a wafer boat housing defining a water boat chamber, a door assembly, a differential pressure sensor, and a controller. The door assembly has a closed position in which it closes off the process chamber opening. The door assembly defines in a closed position a door assembly chamber having a purge gas inlet for supplying purge gas to the door assembly chamber for gas sealingly separating the process chamber from the wafer boat chamber. The differential pressure sensor assembly fluidly connects to the door assembly chamber and is configured to determine a pressure difference between a pressure in the door assembly chamber and a reference pressure in a reference pressure chamber. The controller is configured to establish whether the pressure difference is in a desired pressure range.

    CHEMICAL VAPOR DEPOSITION FURNACE WITH A CLEANING GAS SYSTEM TO PROVIDE A CLEANING GAS

    公开(公告)号:US20230008131A1

    公开(公告)日:2023-01-12

    申请号:US17810773

    申请日:2022-07-05

    Abstract: A chemical vapor deposition furnace for depositing silicon nitride films is disclosed. The furnace having a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector inside the process chamber is provided with a plurality of vertically spaced gas injection holes to provide gas introduced at a feed end in an interior of the process gas injector to the process chamber. A valve system connected to the feed end of the process gas injector is being constructed and arranged to connect a source of a silicon precursor and a nitrogen precursor to the feed end for depositing silicon nitride layers. The valve system may connect the feed end of the process gas injector to a cleaning gas system to provide a cleaning gas to remove silicon nitride from the process gas injector and/or the processing chamber.

    MANIFOLDS FOR UNIFORM VAPOR DEPOSITION

    公开(公告)号:US20220349060A1

    公开(公告)日:2022-11-03

    申请号:US17810115

    申请日:2022-06-30

    Abstract: A semiconductor device comprising a manifold for uniform vapor deposition is disclosed. The semiconductor device can include a manifold comprising a bore and having an inner wall. The inner wall can at least partially define the bore. A first axial portion of the bore can extend along a longitudinal axis of the manifold. A supply channel can provide fluid communication between a gas source and the bore. The supply channel can comprise a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore. The at least partially annular gap can be revolved about the longitudinal axis.

    APPARATUS FOR DISPENSING A VAPOR PHASE REACTANT TO A REACTION CHAMBER AND RELATED METHODS

    公开(公告)号:US20190093221A1

    公开(公告)日:2019-03-28

    申请号:US16130798

    申请日:2018-09-13

    Abstract: An apparatus for dispensing a vapor phase reactant to a reaction chamber is disclosed. The apparatus may include: a first chamber configured for holding a source chemical with a first fill level; and a second chamber configured for holding the source chemical with a second fill level and in fluid communication with the first chamber via a fluid channel below the first and second fill levels. The apparatus may also include: a second chamber inlet opening in fluid communication with a pressurizing gas feed provided with a flow controller configured for controlling a flow of a pressurizing gas in the second chamber to control the first fill level in the first chamber. Methods for dispensing a vapor phase reactant are also provided.

    SUBSTRATE PROCESSING APPARATUS WITH AN INJECTOR

    公开(公告)号:US20240384411A1

    公开(公告)日:2024-11-21

    申请号:US18788528

    申请日:2024-07-30

    Abstract: A substrate processing apparatus having a tube, a closed liner lining the interior surface of the tube, a plurality of gas injectors to provide a gas to an inner space of the liner, and, a gas exhaust duct to remove gas from the inner space is disclosed. The liner may have a substantially cylindrical wall delimited by a liner opening at a lower end and being substantially closed for gases above the liner opening. The apparatus may have a boat constructed and arranged moveable into the inner space via the liner opening and provided with a plurality of substrate holders for holding a plurality of substrates over a substrate support length in the inner space. Each of the gas injectors may have a single exit opening at the top and the exit openings of the plurality of injectors are substantially equally divided over the substrate support length.

    REACTANT VAPORIZER AND RELATED SYSTEMS AND METHODS

    公开(公告)号:US20240209501A1

    公开(公告)日:2024-06-27

    申请号:US18596144

    申请日:2024-03-05

    CPC classification number: C23C16/4481 C23C16/45544

    Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.

    APPARATUS FOR PROCESSING A PLURALITY OF SUBSTRATES PROVIDED WITH AN EXTRACTOR CHAMBER

    公开(公告)号:US20230008684A1

    公开(公告)日:2023-01-12

    申请号:US17810759

    申请日:2022-07-05

    Abstract: An apparatus 1 for processing a plurality of substrates 3 is provided. The apparatus may have a process tube 5 creating a process chamber 7; a heater 9 surrounding the process tube 5; a flange 11 for supporting the process tube; and a door 15 configured to support a wafer boat 17 with a plurality of substrates 3 in the process chamber and to seal the process chamber 7. An exhaust operably connected to the process chamber 7 may be provided to remove gas from the process chamber via a first exhaust duct 19. The apparatus may be provided with an extractor chamber 21 surrounding the first exhaust duct where it connects to the process chamber and connected to a second exhaust duct 23 to remove gas from the extractor chamber.

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