公开(公告)号：US20230142899A1

公开(公告)日：2023-05-11

申请号：US17979237

申请日：2022-11-02

Applicant: ASM IP Holding B.V.

Inventor： Shinya Ueda ,  SeokJae Oh ,  HyunGyu Jang ,  HeeSung Kang ,  WanGyu Lim ,  HyounMo Choi ,  YoungJae Kim

IPC: C23C16/505 ,  H01J37/32 ,  C23C16/34 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/505 ,  H01J37/32743 ,  H01J37/32449 ,  C23C16/345 ,  C23C16/52 ,  C23C16/45536 ,  H01J2237/3321

Abstract: A method and system for forming a film on a substrate are disclosed. Exemplary methods include using a first plasma condition to form a layer of deposited material having a good film thickness uniformity, using a second plasma condition to treat the deposited material and thereby form treated material, and using a third plasma condition to form a surface-modified layer—e.g., reactive sites on the treated material.