公开(公告)号：US09552979B2

公开(公告)日：2017-01-24

申请号：US13907718

申请日：2013-05-31

Applicant: ASM IP Holding B.V.

Inventor： Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Peter Zagwijn ,  Hessel Sprey ,  Cornelius A. van der Jeugd ,  Marinus Josephus de Blank ,  Robin Roelofs ,  Qi Xie ,  Jan Willem Maes

IPC: H01L21/469 ,  H01L21/31 ,  H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  C23C16/458 ,  H01L29/20

CPC classification number: H01L21/02178 ,  C23C16/303 ,  C23C16/45525 ,  C23C16/4583 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003

Abstract: A process for depositing aluminum nitride is disclosed. The process comprises providing a plurality of semiconductor substrates in a batch process chamber and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to plasma during the deposition cycles. Each deposition cycle comprises flowing an aluminum precursor pulse into the batch process chamber, removing the aluminum precursor from the batch process chamber, and removing the nitrogen precursor from the batch process chamber after flowing the nitrogen precursor and before flowing another pulse of the aluminum precursor. The process chamber may be a hot wall process chamber and the deposition may occur at a deposition pressure of less than 1 Torr.

Abstract translation: 公开了一种沉积氮化铝的方法。 该方法包括在分批处理室中提供多个半导体衬底，并且通过在沉积循环期间不使衬底暴露于等离子体，通过执行多个沉积循环来在衬底上沉积氮化铝层。 每个沉积循环包括将铝前体脉冲流入分批处理室，从分批处理室中除去铝前体，以及在氮气前体流动之后并且在流过铝前体的另一个脉冲之前从分批处理室中除去氮前体。 处理室可以是热壁处理室，并且沉积可以在小于1托的沉积压力下进行。

公开(公告)号：US20140357090A1

公开(公告)日：2014-12-04

申请号：US13907718

申请日：2013-05-31

Applicant: ASM IP Holding B.V.

Inventor： Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Peter Zagwijn ,  Hessel Sprey ,  Cornelius A. van der Jeugd ,  Marinus Josephus de Blank ,  Robin Roelofs ,  Qi Xie ,  Jan Willem Maes

IPC: H01L21/02

CPC classification number: H01L21/02178 ,  C23C16/303 ,  C23C16/45525 ,  C23C16/4583 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003

Abstract: A process for depositing aluminum nitride is disclosed. The process comprises providing a plurality of semiconductor substrates in a batch process chamber and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to plasma during the deposition cycles. Each deposition cycle comprises flowing an aluminum precursor pulse into the batch process chamber, removing the aluminum precursor from the batch process chamber, and removing the nitrogen precursor from the batch process chamber after flowing the nitrogen precursor and before flowing another pulse of the aluminum precursor. The process chamber may be a hot wall process chamber and the deposition may occur at a deposition pressure of less than 1 Torr.

Abstract translation: 公开了一种沉积氮化铝的方法。 该方法包括在间歇处理室中提供多个半导体衬底，并且通过在沉积循环期间不使衬底暴露于等离子体，通过执行多个沉积循环在衬底上沉积氮化铝层。 每个沉积循环包括将铝前体脉冲流入分批处理室，从分批处理室中除去铝前体，以及在氮气前体流动之后并且在流过铝前体的另一个脉冲之前从分批处理室中除去氮前体。 处理室可以是热壁处理室，并且沉积可以在小于1托的沉积压力下进行。