公开(公告)号：US20140282303A1

公开(公告)日：2014-09-18

申请号：US14294745

申请日：2014-06-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Hanying FENG ,  Yu Cao ,  Jun Ye

IPC: G06F17/50

CPC classification number: G06F17/50 ,  G02B19/0014 ,  G02B19/0028 ,  G02B19/0095 ,  G03F7/705

Abstract: Described herein are methods for matching the characteristics of a lithographic projection apparatus to a reference lithographic projection apparatus, where the matching includes optimizing illumination source and projection optics characteristics. The projection optics can be used to shape wavefront in the lithographic projection apparatus. According to the embodiments herein, the methods can be accelerated by using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).

Abstract translation: 这里描述了将光刻投影设备的特性与参考光刻投影设备进行匹配的方法，其中匹配包括优化照明源和投影光学特性。 投影光学元件可用于在光刻投影装置中形成波前。 根据本文的实施例，可以通过使用线性拟合算法或使用使用传输交叉系数（TCC）的偏导数的泰勒级数扩展来加速该方法。

公开(公告)号：US20150186557A1

公开(公告)日：2015-07-02

申请号：US14589738

申请日：2015-01-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun YE ,  Yu CAO ,  Hanying FENG ,  Wenjin SHAO

IPC: G06F17/50 ,  G06F17/10

CPC classification number: G06F17/50 ,  G03F1/14 ,  G03F1/44 ,  G03F1/68 ,  G03F7/70433 ,  G03F7/705 ,  G06F17/10 ,  G06F17/5009

Abstract: Methods according to the present invention provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.

Abstract translation: 根据本发明的方法提供了用于设计用于校准用于模拟过程中的模型的计量模式的计算上有效的技术。 更具体地说，本发明涉及设计规格图案的方法，该图形模式可以用最小数量的量规完成覆盖参数变化，并且在用于对具有多个特征的目标设计进行成像的光刻处理的校准中的对应测量。 根据一些方面，根据本发明的方法包括改变模型参数空间的空间（基于CD灵敏度或Delta TCC），然后迭代地识别在该新空间中与现有计量器的CD灵敏度最正交的方向，以及 确定最敏感的线宽/间距组合与最佳辅助功能放置，导致在模型参数空间中沿着该方向的最敏感的CD变化。

公开(公告)号：US20160246168A1

公开(公告)日：2016-08-25

申请号：US15144242

申请日：2016-05-02

Applicant: ASML NETHERLANDS B.V

Inventor： Jun YE ,  Yu CAO ,  Hanying FENG

IPC: G03F1/36 ,  G06F17/50

CPC classification number: G03F1/36 ,  G03F1/144 ,  G03F7/70441 ,  G03F7/705 ,  G06F17/5081 ,  G06F2217/12

Abstract: An efficient OPC method of increasing imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and optimizing target gray level for each evaluation point in each OPC iteration based on this function. In one given embodiment, the function is approximated as a polynomial function of focus and exposure, R(ε,ƒ)=P0+ƒ2·Pb with a threshold of T+Vε for contours, where PO represents image intensity at nominal focus, ƒ represents the defocus value relative to the nominal focus, ε represents the exposure change, V represents the scaling of exposure change, and parameter “Pb” represents second order derivative images. In another given embodiment, the analytical optimal gray level is given for best focus with the assumption that the probability distribution of focus and exposure variation is Gaussian.

Abstract translation: 一种提高用于成像具有多个特征的目标设计的光刻工艺的成像性能的有效的OPC方法。 该方法包括确定用于产生模拟图像的功能，其中功能考虑与光刻工艺相关联的工艺变化; 并基于此功能对每个OPC迭代中的每个评估点优化目标灰度级。 在一个给定的实施例中，该函数近似为聚焦和曝光的多项式函数，R（ε，ƒ）= P0 +ƒ2·Pb，轮廓线的阈值为T +Vε，其中PO表示标称焦点的图像强度， 表示相对于标称焦点的散焦值，ε表示曝光变化，V表示曝光变化的缩放，参数“Pb”表示二阶导数图像。 在另一个给定的实施例中，假设聚焦和曝光变化的概率分布为高斯，给出最佳聚焦的分析最佳灰度级。

公开(公告)号：US20150153651A1

公开(公告)日：2015-06-04

申请号：US14575609

申请日：2014-12-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Hanying FENG ,  Yu CAO ,  Jun YE ,  Youping ZHANG

IPC: G03F7/20

Abstract: The present invention relates to methods and systems for designing gauge patterns that are extremely sensitive to parameter variation, and thus robust against random and repetitive measurement errors in calibration of a lithographic process utilized to image a target design having a plurality of features. The method may include identifying most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD (or other lithography response parameter) changes against lithography process parameter variations, such as wavefront aberration parameter variation. The method may also include designing gauges which have more than one test patterns, such that a combined response of the gauge can be tailored to generate a certain response to wavefront-related or other lithographic process parameters. The sensitivity against parameter variation leads to robust performance against random measurement error and/or any other measurement error.

Abstract translation: 本发明涉及用于设计对参数变化非常敏感的规格图案的方法和系统，因此对于用于对具有多个特征进行成像的目标设计的光刻工艺的校准中的随机和重复的测量误差是鲁棒的。 该方法可以包括以最佳辅助特征放置来识别最敏感的线宽/间距组合，其导致针对光刻过程参数变化（例如波前像差参数变化）的最敏感的CD（或其他光刻响应参数）变化。 该方法还可以包括设计具有多于一个测试图案的计量器，使得量规的组合响应可以被调整以产生对波前相关或其它光刻工艺参数的特定响应。 对参数变化的敏感性导致对随机测量误差和/或任何其他测量误差的鲁棒性能。

公开(公告)号：US20150074619A1

公开(公告)日：2015-03-12

申请号：US14543326

申请日：2014-11-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu CAO ,  Hanying FENG ,  Jun YE

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70483 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70991 ,  G06F17/5068

Abstract: The present invention relates to a method for tuning lithography systems so as to allow different lithography systems to image different patterns utilizing a known process that does not require a trial and error process to be performed to optimize the process and lithography system settings for each individual lithography system. According to some aspects, the present invention relates to a method for a generic model-based matching and tuning which works for any pattern. Thus it eliminates the requirements for CD measurements or gauge selection. According to further aspects, the invention is also versatile in that it can be combined with certain conventional techniques to deliver excellent performance for certain important patterns while achieving universal pattern coverage at the same time.

Abstract translation: 本发明涉及一种用于调整光刻系统的方法，以便允许不同的光刻系统利用不需要进行试验和误差处理的已知工艺对不同的图案进行成像，以优化每个单独光刻的工艺和光刻系统设置 系统。 根据一些方面，本发明涉及一种用于任何模式的基于模型的通用匹配和调整的方法。 因此，它消除了对CD测量或量规选择的要求。 根据其它方面，本发明也是通用的，因为它可以与某些常规技术相结合，以在同时实现通用图案覆盖的同时为某些重要图案提供优异的性能。