公开(公告)号：US10705430B2

公开(公告)日：2020-07-07

申请号：US15977866

申请日：2018-05-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Gonzalo Roberto Sanguinetti ,  Nicolas Mauricio Weiss ,  Jean-Pierre Agnes Henricus Marie Vaessen

IPC: G03F7/20

Abstract: A method of measuring a parameter of interest relating to a structure formed by a process on a substrate, and associated apparatuses. The method includes measuring the structure with measurement radiation including a first illumination acquisition setting (determining one or more selected from: a wavelength, a polarization or an incident angle of the measurement radiation) to obtain a first measurement value for the structure. The method further includes estimating, by applying a correction model to the first measurement value, at least a second measurement value for the structure corresponding to measurement of the structure with a second illumination acquisition setting different from the first illumination acquisition setting.

公开(公告)号：US20190171115A1

公开(公告)日：2019-06-06

申请号：US16194769

申请日：2018-11-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Joannes Jitse VENSELAAR ,  Anagnostis Tsiatmas ,  Samee Ur Rehman ,  Paul Christiaan Hinnen ,  Jean-Pierre Agnes Henricus Marie Vaessen ,  Nicolas Mauricio Weiss ,  Gonzalo Roberto Sanguinetti ,  Thomai Zacharopoulou ,  Martijn Maria Zaal

IPC: G03F7/20 ,  G06F17/12

Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.

公开(公告)号：US10132763B2

公开(公告)日：2018-11-20

申请号：US14416484

申请日：2013-06-18

Applicant: ASML Netherlands B.V.

Inventor： Hugo Augustinus Joseph Cramer ,  Robert John Socha ,  Patricius Aloysius Jacobus Tinnemans ,  Jean-Pierre Agnes Henricus Marie Vaessen

IPC: G03B27/52 ,  G01N23/203 ,  G03F7/20 ,  H01J37/26

Abstract: An inspection method determines values of profile parameters of substrate patterns. A baseline substrate with a baseline pattern target (BP) is produced that has a profile described by profile parameters, for example CD (median critical dimension), SWA (side wall angle) and RH (resist height). Scatterometry is used to obtain first and second signals from first and second targets. Values of differential pattern profile parameters are calculated using a Bayesian differential cost function based on a difference between the baseline pupil and the perturbed pupil and dependence of the pupil on pattern profile parameters. For example, the difference is measured between a baseline process and a perturbed process for stability control of a lithographic process. Fed-forward differential stack parameters are also calculated from observations of stack targets on the same substrates as the pattern targets.

公开(公告)号：US11604419B2

公开(公告)日：2023-03-14

申请号：US17241142

申请日：2021-04-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Joannes Jitse Venselaar ,  Anagnostis Tsiatmas ,  Samee Ur Rehman ,  Paul Christiaan Hinnen ,  Jean-Pierre Agnes Henricus Marie Vaessen ,  Nicolas Mauricio Weiss ,  Gonzalo Roberto Sanguinetti ,  Thomai Zacharopoulou ,  Martijn Maria Zaal

IPC: G03F7/20 ,  G06F17/12

Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.

公开(公告)号：US10691030B2

公开(公告)日：2020-06-23

申请号：US16192853

申请日：2018-11-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Frank Staals ,  Eric Jos Anton Brouwer ,  Carlo Cornelius Maria Luijten ,  Jean-Pierre Agnes Henricus Marie Vaessen

IPC: G03F7/20 ,  G01N21/956 ,  G01N21/47

Abstract: A focus metrology target includes one or more periodic arrays of features. A measurement of focus performance of a lithographic apparatus is based at least in part on diffraction signals obtained from the focus metrology target. Each periodic array of features includes a repeating arrangement of first zones interleaved with second zones, a feature density being different in the first zones and the second zones. Each first zone includes a repeating arrangement of first features. A minimum dimension of each first feature is close to but not less than a resolution limit of the printing by the lithographic apparatus, so as to comply with a design rule in a given a process environment. A region of high feature density may further include a repeating arrangement of larger features.

公开(公告)号：US11022897B2

公开(公告)日：2021-06-01

申请号：US16194769

申请日：2018-11-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Joannes Jitse Venselaar ,  Anagnostis Tsiatmas ,  Samee Ur Rehman ,  Paul Christiaan Hinnen ,  Jean-Pierre Agnes Henricus Marie Vaessen ,  Nicolas Mauricio Weiss ,  Gonzalo Roberto Sanguinetti ,  Thomai Zacharopoulou ,  Martijn Maria Zaal

IPC: G01D1/00 ,  G03F7/20 ,  G06F17/12

Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.

公开(公告)号：US20190171114A1

公开(公告)日：2019-06-06

申请号：US16192853

申请日：2018-11-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Frank STAALS ,  Eric Jos Anton Brouwer ,  Carlo Cornelis Maria Luijten ,  Jean-Pierre Agnes Henricus Marie Vaessen

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956

Abstract: A focus metrology target includes one or more periodic arrays of features. A measurement of focus performance of a lithographic apparatus is based at least in part on diffraction signals obtained from the focus metrology target. Each periodic array of features includes a repeating arrangement of first zones interleaved with second zones, a feature density being different in the first zones and the second zones. Each first zone includes a repeating arrangement of first features. A minimum dimension of each first feature is close to but not less than a resolution limit of the printing by the lithographic apparatus, so as to comply with a design rule in a given a process environment. A region of high feature density may further include a repeating arrangement of larger features.

公开(公告)号：US09958789B2

公开(公告)日：2018-05-01

申请号：US15186031

申请日：2016-06-17

Applicant: ASML Netherlands B.V.

Inventor： Peter Hanzen Wardenier ,  Frank Staals ,  Jean-Pierre Agnes Henricus Marie Vaessen ,  Hans Van Der Laan

IPC: G03F7/20 ,  G01B11/03

CPC classification number: G03F7/70591 ,  G01B11/03 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633

Abstract: Disclosed is a method of determining a correction for measured values of radiation diffracted from a target comprising a plurality of periodic structures, subsequent to measurement of the target using measurement radiation defining a measurement field. The correction acts to correct for measurement field location dependence in the measured values. The method comprises performing a first and second measurements of the periodic structures; and determining a correction from said first measurement and said second measurement. The first measurement is performed with said target being in a normal measurement location with respect to the measurement field. The second measurement is performed with the periodic structure in a shifted location with respect to the measurement field, said shifted location comprising the location of another of said periodic structures when said target is in said normal measurement location with respect to the measurement field.

公开(公告)号：US20150177166A1

公开(公告)日：2015-06-25

申请号：US14416484

申请日：2013-06-18

Applicant: ASML Netherlands B.V.

Inventor： Hugo Augustinus Joseph Cramer ,  Robert John Socha ,  Patricius Aloysius Jacobus Tinnemans ,  Jean-Pierre Agnes Henricus Marie Vaessen

IPC: G01N23/203 ,  G03F7/20 ,  H01J37/26

CPC classification number: G01N23/203 ,  G03F7/70058 ,  G03F7/70625 ,  H01J37/26

Abstract: An inspection method determines values of profile parameters of substrate patterns. A baseline substrate with a baseline pattern target (BP) is produced that has a profile described by profile parameters, for example CD (median critical dimension), SWA (side wall angle) and RH (resist height). Scatterometry is used to obtain first and second signals from first and second targets. Values of differential pattern profile parameters are calculated using a Bayesian differential cost function based on a difference between the baseline pupil and the perturbed pupil and dependence of the pupil on pattern profile parameters. For example, the difference is measured between a baseline process and a perturbed process for stability control of a lithographic process. Fed-forward differential stack parameters are also calculated from observations of stack targets on the same substrates as the pattern targets.

Abstract translation: 检查方法确定基板图案的轮廓参数的值。 产生具有基线图案目标（BP）的基准基底，其具有通过轮廓参数描述的轮廓，例如CD（中值临界尺寸），SWA（侧壁角）和RH（抗蚀剂高度）。 散射法用于获得第一和第二个目标的第一和第二信号。 使用贝叶斯差分成本函数，基于基线瞳孔和扰动瞳孔之间的差异以及瞳孔对图形轮廓参数的依赖性来计算微分图案轮廓参数的值。 例如，在光刻工艺的稳定性控制的基线工艺和扰动工艺之间测量差异。 前馈差分堆栈参数也是通过与模式目标相同的基板上的堆叠目标的观察来计算的。