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公开(公告)号：US10649342B2
公开(公告)日：2020-05-12
申请号：US16308835
申请日：2017-06-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Léon Maria Albertus Van Der Logt , Bart Peter Bert Segers , Simon Hendrik Celine Van Gorp , Carlo Cornelis Maria Luijten , Frank Staals
IPC: G03F7/20
Abstract: A lithographic process is one that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. During the lithographic process, the focus should be controlled. There is disclosed a method for determining a fingerprint of a performance parameter associated with a substrate, such as a focus value to be used during the lithographic process. A reference fingerprint of the performance parameter is determined for a reference substrate. A reference substrate parameter of the reference substrate is determined. A substrate parameter for a substrate, such as a substrate with product structures, is determined. Subsequently, the fingerprint of the performance parameter is determined based on the reference fingerprint, the reference substrate parameter and the substrate parameter. The fingerprint may then be used to control the lithographic process.
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2.发明申请公开(公告)号：US20190171114A1
公开(公告)日：2019-06-06
申请号：US16192853
申请日：2018-11-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Frank STAALS , Eric Jos Anton Brouwer , Carlo Cornelis Maria Luijten , Jean-Pierre Agnes Henricus Marie Vaessen
IPC: G03F7/20 , G01N21/47 , G01N21/956
Abstract: A focus metrology target includes one or more periodic arrays of features. A measurement of focus performance of a lithographic apparatus is based at least in part on diffraction signals obtained from the focus metrology target. Each periodic array of features includes a repeating arrangement of first zones interleaved with second zones, a feature density being different in the first zones and the second zones. Each first zone includes a repeating arrangement of first features. A minimum dimension of each first feature is close to but not less than a resolution limit of the printing by the lithographic apparatus, so as to comply with a design rule in a given a process environment. A region of high feature density may further include a repeating arrangement of larger features.
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公开(公告)号：US20150192861A1
公开(公告)日：2015-07-09
申请号：US14419425
申请日：2013-07-30
Applicant: ASML Netherlands B.V.
Inventor： Vadim Yevgenyevich Banine , Arthur Winfried Eduardus Minnaert , Johannus Elisabeth Hubertus Muitjens , Andrei Mikhailovich Yakunin , Luigi Scaccabarozzi , Hans Joerg Mallmann , Kurstat Bal , Carlo Cornelis Maria Luijten , Han-Kwang Nienhuys , Alexander Marinus Arnoldus Huijberts , Paulus Albertus Maria Gasseling , Pedro Julian Rizo Diago , Maarten Van Kampen , Nicolaas Aldegonda Jan Maria Van Aerle
IPC: G03F7/20
CPC classification number: G03F7/70191 , G03F7/70308 , G03F7/70575 , G21K1/10
Abstract: There is disclosed a lithographic apparatus provided with a spectral purity filter which may be provided in one or more of the following locations: (a) in the illumination system, (b) adjacent the patterning device, either a static location in the radiation beam or fixed for movement with the patterning device, (c) in the projection system, and (d) adjacent the substrate table. The spectral purity filter is preferably a membrane formed of polysilicon, a multilayer material, a carbon nanotube material or graphene. The membrane may be provided with a protective capping layer, and/or a thin metal transparent layer.
Abstract translation: 公开了一种设置有光谱纯度滤光器的光刻设备，其可以设置在以下一个或多个位置：（a）在照明系统中，（b）与图案形成装置相邻，辐射束中的静态位置或 固定用于与图案形成装置一起运动，（c）在投影系统中，和（d）邻近衬底台。 光谱纯度滤光片优选为由多晶硅，多层材料，碳纳米管材料或石墨烯形成的膜。 膜可以设置有保护性盖层和/或薄金属透明层。
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公开(公告)号：US11054754B2
公开(公告)日：2021-07-06
申请号：US16626690
申请日：2018-05-28
Applicant: ASML Netherlands B.V.
Inventor： Frank Staals , Anton Bernhard Van Oosten , Yasri Yudhistira , Carlo Cornelis Maria Luijten , Bert Verstraeten , Jan-Willem Gemmink
IPC: G03F7/20
Abstract: Focus metrology patterns and methods are disclosed which do not rely on sub-resolution features. Focus can be measured by measuring asymmetry of the printed pattern (T), or complementary pairs of printed patterns (TN/TM). Asymmetry can be measured by scatterometry. Patterns may be printed using EUV radiation or DUV radiation. A first type of focus metrology pattern comprises first features (422) interleaved with second features (424) A minimum dimension (w1) of each first feature is close to a printing resolution. A maximum dimension (w2) of each second feature in the direction of periodicity is at least twice the minimum dimension of the first features. Each first feature is positioned between two adjacent second features such that a spacing (w1′) and its nearest second feature is between one half and twice the minimum dimension of the first features. A second type of focus metrology pattern comprises features (1122, 1124) arranged in pairs.
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公开(公告)号：US09625835B2
公开(公告)日：2017-04-18
申请号：US14356358
申请日：2012-10-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Manish Ranjan , Carlo Cornelis Maria Luijten , Franciscus Johannes Joseph Janssen , Maksym Chernyshov
CPC classification number: G03F7/70875 , G03F7/70633 , G03F7/70716 , G03F7/70933
Abstract: A lithographic apparatus includes a substrate table constructed to hold a substrate, a projection system configured to project a patterned radiation beam through an opening and onto a target portion of the substrate, and a conduit having an outlet in the opening. The conduit is configured to deliver gas to the opening. The lithographic apparatus includes a temperature control apparatus disposed in a space between the projection system and the substrate table. The temperature control device is configured to control the temperature of the gas in the space after the gas passes through the opening.
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Patent Agency Ranking
公开(公告)号：US10571812B2
公开(公告)日：2020-02-25
申请号：US16045979
申请日：2018-07-26
Applicant: ASML Netherlands B.V.
Inventor： Fahong Li , Miguel Garcia Granda , Carlo Cornelis Maria Luijten , Bart Peter Bert Segers , Cornelis Andreas Franciscus Johannes Van Der Poel , Frank Staals , Anton Bernhard Van Oosten , Mohamed Ridane
Abstract: Focus performance of a lithographic apparatus is measured using pairs of targets that have been exposed (1110) with an aberration setting (e.g. astigmatism) that induces a relative best focus offset between them. A calibration curve (904) is obtained in advance by exposing similar targets on FEM wafers (1174, 1172). In a set-up phase, calibration curves are obtained using multiple aberration settings, and an anchor point (910) is recorded, where all the calibration curves intersect. When a new calibration curve is measured (1192), the anchor point is used to produce an adjusted updated calibration curve (1004′) to cancel focus drift and optionally to measure drift of astigmatism. Another aspect of the disclosure (FIGS. 13-15) uses two aberration settings (+AST, −AST) in each measurement, reducing sensitivity to astigmatism drift. Another aspect (FIGS. 16-17) uses pairs of targets printed with relative focus offsets, by double exposure in one resist layer.
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公开(公告)号：US10001710B2
公开(公告)日：2018-06-19
申请号：US15214067
申请日：2016-07-19
Applicant: ASML Netherlands B.V.
Inventor： Frank Staals , Carlo Cornelis Maria Luijten , Paul Christiaan Hinnen , Anton Bernhard Van Oosten
CPC classification number: G03F7/70633 , G01B11/02 , G01B11/272 , G01B2210/56 , G03F7/70625 , G03F7/70641
Abstract: Disclosed is a method of monitoring a lithographic process parameter, such as focus and/or dose, of a lithographic process. The method comprises acquiring a first and a second target measurement using respectively a first measurement configuration and a second measurement configuration, and determining the lithographic process parameter from a first metric derived from said first target measurement and said second target measurement. The first metric may be difference. Also disclosed are corresponding measurement and lithographic apparatuses, a computer program and a method of manufacturing devices.
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公开(公告)号：US09823590B2
公开(公告)日：2017-11-21
申请号：US15451358
申请日：2017-03-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Manish Ranjan , Carlo Cornelis Maria Luijten , Franciscus Johannes Joseph Janssen , Maksym Chernyshov
CPC classification number: G03F7/70875 , G03F7/70633 , G03F7/70716 , G03F7/70933
Abstract: A lithographic apparatus includes a substrate table constructed to hold a substrate, a projection system configured to project a patterned radiation beam through an opening and onto a target portion of the substrate, and a conduit having an outlet in the opening. The conduit is configured to deliver gas to the opening. The lithographic apparatus includes a temperature control apparatus disposed in a space between the projection system and the substrate table. The temperature control device is configured to control the temperature of the gas in the space after the gas passes through the opening.
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公开(公告)号：US09494879B2
公开(公告)日：2016-11-15
申请号：US14395981
申请日：2013-04-05
Applicant: ASML Netherlands B.V.
Inventor： Carlo Cornelis Maria Luijten
CPC classification number: G03F7/70916 , G03F7/70033 , G03F7/70883 , H05G2/008
Abstract: Disclosed is a contamination trap arrangement (300) configured to trap debris particles that are generated with the formation of a plasma within a radiation source configured to generate extreme ultraviolet radiation. The contamination trap comprises a vane structure (310) for trapping the debris particles; a heating arrangement (330) for heating the vane structure, the heating arrangement being in thermal communication with the vane structure; a cooling arrangement (350) for transporting heat generated as a result of the plasma formation, away from the vane structure, and a gap (370) between the heating arrangement and the cooling arrangement. The cooling arrangement is in thermal communication with the vane structure via the heating arrangement and the gap and the contamination trap also comprises a heat transfer adjustment arrangement operable to adjust the heat transfer characteristics of a fluid inside of the gap by providing for controllable relative movement between the surfaces defining the gap.
Abstract translation: 公开了一种污染捕集装置（300），其被配置成捕获在被配置为产生极紫外辐射的辐射源内形成等离子体而产生的碎屑颗粒。 污染物捕集器包括用于捕获碎屑颗粒的叶片结构（310） 用于加热所述叶片结构的加热装置（330），所述加热装置与所述叶片结构热连通; 用于将等离子体形成结果产生的热量远离叶片结构传送的冷却装置和加热装置与冷却装置之间的间隙（370）。 冷却装置通过加热装置与叶片结构热连通并且间隙，并且污染物捕集阱还包括热传递调节装置，其可操作以通过提供间隙之间的可控相对运动来调节间隙内部的流体的传热特性 表面限定间隙。
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公开(公告)号：US09606445B2
公开(公告)日：2017-03-28
申请号：US14419425
申请日：2013-07-30
Applicant: ASML Netherlands B.V.
Inventor： Vadim Yevgenyevich Banine , Arthur Winfried Eduardus Minnaert , Marcel Johannus Elisabeth Hubertus Muitjens , Andrei Mikhailovich Yakunin , Luigi Scaccabarozzi , Hans Joerg Mallmann , Kurstat Bal , Carlo Cornelis Maria Luijten , Han-Kwang Nienhuys , Alexander Marinus Arnoldus Huijberts , Paulus Albertus Maria Gasseling , Pedro Julian Rizo Diago , Maarten Van Kampen , Nicolaas Aldegonda Jan Maria Van Aerle
CPC classification number: G03F7/70191 , G03F7/70308 , G03F7/70575 , G21K1/10
Abstract: There is disclosed a lithographic apparatus provided with a spectral purity filter which may be provided in one or more of the following locations: (a) in the illumination system, (b) adjacent the patterning device, either a static location in the radiation beam or fixed for movement with the patterning device, (c) in the projection system, and (d) adjacent the substrate table. The spectral purity filter is preferably a membrane formed of polysilicon, a multilayer material, a carbon nanotube material or graphene. The membrane may be provided with a protective capping layer, and/or a thin metal transparent layer.
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