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公开(公告)号：US11487198B2
公开(公告)日：2022-11-01
申请号：US17477765
申请日：2021-09-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Duan-Fu Stephen Hsu , Jingjing Liu
IPC: G03F1/36
Abstract: A patterning device, includes: an absorber layer on a patterning device substrate; and a reflective or transmissive layer on the patterning device substrate, wherein the absorber layer and the reflective or transmissive layer together define a pattern layout having a main feature and an attenuated sub-resolution assist feature paired with the main feature, wherein: the main feature is configured to generate, upon transferring the device pattern to a layer of patterning material on a substrate, the main feature in the layer of patterning material, and upon the transferring the pattern to the layer of patterning material, the attenuated sub-resolution assist feature is configured to avoid generating a feature in the layer of patterning material and to produce a different radiation intensity than the main feature.
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公开(公告)号：US11580289B2
公开(公告)日：2023-02-14
申请号：US17297801
申请日：2019-10-29
Applicant: ASML NETHERLANDS B.V.
Inventor： Roshni Biswas , Rafael C. Howell , Cuiping Zhang , Ningning Jia , Jingjing Liu , Quan Zhang
IPC: G06F30/30 , G03F7/20 , G06F30/398 , G06F30/392 , G06F119/18
Abstract: A method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.
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公开(公告)号：US10796063B2
公开(公告)日：2020-10-06
申请号：US16093401
申请日：2017-04-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Duan-Fu Stephen Hsu , Jingjing Liu
Abstract: A method including obtaining at least a clip of a design layout, and determining a representation of the clip on a patterning device, under a condition that a reduction ratio from the representation to the clip is anisotropic. A method including obtaining a relationship between a first geometric characteristic in a design layout or an image thereof, and a second geometric characteristic in a representation of the design layout on a patterning device, wherein the relationship is a function involving reduction ratios in two different directions.
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公开(公告)号：US12222656B2
公开(公告)日：2025-02-11
申请号：US17638899
申请日：2020-08-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Jingjing Liu , Duan-Fu Stephen Hsu , Xingyue Peng
IPC: G06F30/30 , G03F7/00 , G05B19/4099
Abstract: A method for determining process window limiting patterns based on aberration sensitivity associated with a patterning apparatus. The method includes obtaining (i) a first set of kernels and a second set of kernels associated with an aberration wavefront of the patterning apparatus and (ii) a design layout to be printed on a substrate via the patterning apparatus; and determining, via a process simulation using the design layout, the first set of kernels, and the second set of kernels, an aberration sensitivity map associated with the aberration wavefront, the aberration sensitivity map indicating how sensitive one or more portions of the design layout are to an individual aberrations and an interaction between different aberrations; determining, based on the aberration sensitivity map, the process window limiting pattern associated with the design layout having relatively high sensitivity compared to other portions of the design layout.
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公开(公告)号：US11972194B2
公开(公告)日：2024-04-30
申请号：US18089848
申请日：2022-12-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Roshni Biswas , Rafael C. Howell , Cuiping Zhang , Ningning Jia , Jingjing Liu , Quan Zhang
IPC: G06F30/30 , G03F7/00 , G03F7/20 , G06F30/392 , G06F30/398 , G06F119/18
CPC classification number: G06F30/398 , G03F7/70441 , G03F7/705 , G03F7/70625 , G06F30/392 , G06F2119/18
Abstract: A method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.
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Patent Agency Ranking
公开(公告)号：US11899374B2
公开(公告)日：2024-02-13
申请号：US17047441
申请日：2019-04-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Xingyue Peng , Jingjing Liu
Abstract: A method for determining electromagnetic fields associated with a mask model of a patterning process. The method includes obtaining a mask stack region of interest and an interaction order corresponding to the mask stack region of interest. The mask stack region of interest is divided into sub regions. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The method includes generating one or more electromagnetic field determination expressions based on the Maxwell Equations and the Quantum Schrodinger Equation. The method includes determining an electromagnetic field associated with the mask stack region of interest based on the sub regions of the mask stack region of interest and the characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest, using the one or more electromagnetic field determination expressions.
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公开(公告)号：US11086230B2
公开(公告)日：2021-08-10
申请号：US16777941
申请日：2020-01-31
Applicant: ASML NETHERLANDS B.V.
Inventor： Duan-Fu Stephen Hsu , Jingjing Liu
IPC: G03F7/20
Abstract: A method for optimization to increase lithographic apparatus throughput for a patterning process is described. The method includes providing a baseline dose for an EUV illumination and an initial pupil configuration, associated with a lithographic apparatus. The baseline dose and the initial pupil configuration are configured for use with a dose anchor mask pattern and a corresponding dose anchor target pattern for setting an illumination dose for corresponding device patterns of interest. The method includes biasing the dose anchor mask pattern relative to the dose anchor target pattern; determining an acceptable lower dose for the biased dose anchor mask pattern and the initial pupil configuration; unbiasing the dose anchor mask pattern relative to the dose anchor target pattern; and determining a changed pupil configuration and a mask bias for the device patterns of interest based on the acceptable lower dose and the unbiased dose anchor mask pattern.
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公开(公告)号：US11126077B2
公开(公告)日：2021-09-21
申请号：US16485181
申请日：2018-02-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Duan-Fu Stephen Hsu , Jingjing Liu
IPC: G03F1/36
Abstract: A patterning device, includes: an absorber layer on a patterning device substrate; and a reflective or transmissive layer on the patterning device substrate, wherein the absorber layer and the reflective or transmissive layer together define a pattern layout having a main feature and an attenuated sub-resolution assist feature paired with the main feature, wherein: the main feature is configured to generate, upon transferring the device pattern to a layer of patterning material on a substrate, the main feature in the layer of patterning material, and upon the transferring the pattern to the layer of patterning material, the attenuated sub-resolution assist feature is configured to avoid generating a feature in the layer of patterning material and to produce a different radiation intensity than the main feature.
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公开(公告)号：US10990003B2
公开(公告)日：2021-04-27
申请号：US16967789
申请日：2019-02-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Duan-Fu Stephen Hsu , Jingjing Liu , Rafael C. Howell , Xingyue Peng
IPC: G03F1/70 , G06F30/398 , G03F1/36
Abstract: A method to determine a mask pattern for a patterning device. The method includes obtaining a target pattern to be printed on a substrate, an initial continuous tone image corresponding to the target pattern, a binarization function (e.g., a sigmoid, an arctan, a step function, etc.) configured to transform the initial continuous tone image, and a process model configured to predict a pattern on the substrate from an output of the binarization function; and generating a binarized image having a mask pattern corresponding to the initial continuous tone image by iteratively updating the initial continuous tone image based on a cost function such that the cost function is reduced. The cost function (e.g., EPE) determines a difference between a predicted pattern determined by the process model and the target pattern.
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10.发明申请公开(公告)号：US20200249578A1
公开(公告)日：2020-08-06
申请号：US16777941
申请日：2020-01-31
Applicant: ASML NETHERLANDS B.V.
Inventor： Duan-Fu Stephen Hsu , Jingjing Liu
IPC: G03F7/20
Abstract: A method for optimization to increase lithographic apparatus throughput for a patterning process is described. The method includes providing a baseline dose for an EUV illumination and an initial pupil configuration, associated with a lithographic apparatus. The baseline dose and the initial pupil configuration are configured for use with a dose anchor mask pattern and a corresponding dose anchor target pattern for setting an illumination dose for corresponding device patterns of interest. The method includes biasing the dose anchor mask pattern relative to the dose anchor target pattern; determining an acceptable lower dose for the biased dose anchor mask pattern and the initial pupil configuration; unbiasing the dose anchor mask pattern relative to the dose anchor target pattern; and determining a changed pupil configuration and a mask bias for the device patterns of interest based on the acceptable lower dose and the unbiased dose anchor mask pattern.
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