公开(公告)号：US20240094640A1

公开(公告)日：2024-03-21

申请号：US18276014

申请日：2022-01-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Thiago DOS SANTOS GUZELLA ,  Masashi ISHIBASHI ,  NoriaKi SANNO ,  Vahid BASTANI ,  Reza SAHRAEIAN ,  Putra SAPUTRA

IPC: G03F7/00 ,  G06F30/398

CPC classification number: G03F7/70625 ,  G03F7/70558 ,  G03F7/706839 ,  G06F30/398

Abstract: A method for determining a spatially varying process offset for a lithographic process, the spatially varying process offset (MTD) varying over a substrate subject to the lithographic process to form one or more structures thereon. The method includes obtaining a trained model (MOD), having been trained to predict first metrology data based on second metrology data, wherein the first metrology data (OV) is spatially varying metrology data which relates to a first type of measurement of the one or more structures being a measure of yield and the second metrology data (PB) is spatially varying metrology data which relates to a second type of measurement of the one or more structures and correlates with the first metrology data; and using the model to obtain the spatially varying process offset (MTD).

公开(公告)号：US20230288817A1

公开(公告)日：2023-09-14

申请号：US18196432

申请日：2023-05-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Rowin MEIJERINK ,  Putra SAPUTRA ,  Pieter Gerardus Jacobus SMORENBERG ,  Theo Wilhelmus Maria THIJSSEN ,  Khalid ELBATTAY ,  Ma Su Su HLAING ,  Paul DERWIN ,  Bo ZHONG ,  Masaya KOMATSU

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70258 ,  G03F7/70725

Abstract: A method for controlling a lithographic apparatus configured to pattern an exposure field on a substrate including at least a sub-field, the method including: obtaining an initial spatial profile associated with a spatial variation of a performance parameter associated with a layer on the substrate across at least the sub-field of the exposure field; and decomposing the initial spatial profile into at least a first component spatial profile for controlling a lithographic apparatus at a first spatial scale and a second component spatial profile for controlling the lithographic apparatus at a second spatial scale associated with a size of the sub-field, wherein the decomposing includes co-optimizing the first and second component spatial profiles based on correcting the spatial variation of the performance parameter across the sub-field.

公开(公告)号：US20220244649A1

公开(公告)日：2022-08-04

申请号：US17623829

申请日：2020-06-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter Gerardus Jacobus SMORENBERG ,  Putra SAPUTRA ,  Paul DERWIN ,  Khalid ELBATTAY

IPC: G03F7/20

Abstract: A method for determining an intra-field correction for control of a lithographic apparatus configured for exposing a pattern on an exposure field of a substrate, the method includes: obtaining metrology data for use in determining the intra-field correction; determining an accuracy metric indicating a lower accuracy where the metrology data is not reliable and/or where the lithographic apparatus is limited in actuating a potential actuation input which is based on the metrology data; and determining the intra-field correction based at least partially on the accuracy metric.

公开(公告)号：US20220171295A1

公开(公告)日：2022-06-02

申请号：US17441353

申请日：2020-03-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Rowin MEIJERINK ,  Putra SAPUTRA ,  Pieter Gerardus Jacobus SMORENBERG ,  Theo Wilhelmus Maria THIJSSEN ,  Khalid ELBATTAY ,  Ma Su Su HLAING ,  Paul DERWIN ,  BO ZHONG ,  Masaya KOMATSU

IPC: G03F7/20

Abstract: A method for controlling a lithographic apparatus configured to pattern an exposure field on a substrate including at least a sub-field, the method including: obtaining an initial spatial profile associated with a spatial variation of a performance parameter associated with a layer on the substrate across at least the sub-field of the exposure field; and decomposing the initial spatial profile into at least a first component spatial profile for controlling a lithographic apparatus at a first spatial scale and a second component spatial profile for controlling the lithographic apparatus at a second spatial scale associated with a size of the sub-field, wherein the decomposing includes co-optimizing the first and second component spatial profiles based on correcting the spatial variation of the performance parameter across the sub-field.

公开(公告)号：US20220260920A1

公开(公告)日：2022-08-18

申请号：US17612601

申请日：2020-05-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter Gerardus Jacobus SMORENBERG ,  Putra SAPUTRA ,  Khalid ELBATTAY ,  Paul DERWIN ,  Roy WERKMAN ,  Erik JENSEN ,  Hyunwoo YU ,  Gautam SARMA

IPC: G03F7/20

Abstract: A method for determining a sampling scheme, the method including: obtaining a first fingerprint model relating to a first spatial distribution of a performance parameter over a first portion of a semiconductor substrate and a second fingerprint model relating to a second spatial distribution of the performance parameter over a second portion of the semiconductor substrate; and determining a sampling point corresponding to a measuring location on the semiconductor substrate for generating measurement data based on an expected reduction of a first uncertainty metric associated with evaluation of the first fingerprint model over the first portion and an expected reduction of a second uncertainty metric associated with evaluation of the second fingerprint model over the second portion.

公开(公告)号：US20170212429A1

公开(公告)日：2017-07-27

申请号：US15329536

申请日：2015-07-16

Applicant: ASML Netherlands B.V.

Inventor： Adrianus Hendrik KOEVOETS ,  Christianus Wilhelmus Johannes BERENDSEN ,  Rogier Hendrikus Magdalena CORTIE ,  Jim Vincent OVERKAMP ,  Patricius Jacobus NEEFS ,  Putra SAPUTRA ,  Ruud Hendrikus Martinus Johannes BLOKS ,  Michael Johannes Hendrika Wilhelmina RENDERS ,  Johan Gertrudis Cornelis KUNNEN ,  Thibault Simon Mathieu LAURENT

IPC: G03F7/20

CPC classification number: G03F7/70725 ,  G03F7/70341 ,  G03F7/70783 ,  G03F7/70875

Abstract: A lithographic apparatus comprising an object table which carries an object. The lithographic apparatus may further comprise at least one sensor as part of a measurement system to measure a characteristic of the object table, the environment surrounding the lithographic apparatus or another component of the lithographic apparatus. The measured characteristic may be used to estimate the deformation of the object due to varying loads during operation of the lithographic apparatus, for example varying loads induced by a two- phase flow in a channel formed within the object table. Additionally, or alternatively, the lithographic apparatus comprises a predictor to estimate the deformation of the object based on a model. The positioning of the object table carrying the object can be controlled based on the estimated deformation. The positioning of a projection beam, used to pattern a substrate, can be controlled relative to the object, to alter the position of the pattern and/or the projection beam on the substrate, based on the estimated deformation.