公开(公告)号：US12222656B2

公开(公告)日：2025-02-11

申请号：US17638899

申请日：2020-08-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Jingjing Liu ,  Duan-Fu Stephen Hsu ,  Xingyue Peng

IPC: G06F30/30 ,  G03F7/00 ,  G05B19/4099

Abstract: A method for determining process window limiting patterns based on aberration sensitivity associated with a patterning apparatus. The method includes obtaining (i) a first set of kernels and a second set of kernels associated with an aberration wavefront of the patterning apparatus and (ii) a design layout to be printed on a substrate via the patterning apparatus; and determining, via a process simulation using the design layout, the first set of kernels, and the second set of kernels, an aberration sensitivity map associated with the aberration wavefront, the aberration sensitivity map indicating how sensitive one or more portions of the design layout are to an individual aberrations and an interaction between different aberrations; determining, based on the aberration sensitivity map, the process window limiting pattern associated with the design layout having relatively high sensitivity compared to other portions of the design layout.

公开(公告)号：US12092963B2

公开(公告)日：2024-09-17

申请号：US17605358

申请日：2020-03-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Xingyue Peng ,  Duan-Fu Stephen Hsu ,  Rafael C. Howell ,  Qinglin Li

IPC: G06F30/30 ,  G03F7/00

CPC classification number: G03F7/70616 ,  G03F7/705

Abstract: Methods for optimizing an aspect of a patterning process based on defects. For example, a method of source and mask optimization of a patterning process includes obtaining a location on a substrate having a threshold probability of having a defect; defining an defect ambit around the location to include a portion of a pattern on the substrate and one or more evaluation points associated with the portion of the pattern; determining a value of a first cost function based on a defect metric associated with the defect; determining a first guide function for the first cost function, wherein the first guide function is associated with a performance metric of the patterning process at the one or more evaluation locations within the defect ambit; and adjusting a source and/or a mask characteristic based on the value of the first cost function, and the first guide function.

公开(公告)号：US11899374B2

公开(公告)日：2024-02-13

申请号：US17047441

申请日：2019-04-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Xingyue Peng ,  Jingjing Liu

IPC: G06F7/20 ,  G03F7/00 ,  G06F17/14

CPC classification number: G03F7/705 ,  G06F17/14

Abstract: A method for determining electromagnetic fields associated with a mask model of a patterning process. The method includes obtaining a mask stack region of interest and an interaction order corresponding to the mask stack region of interest. The mask stack region of interest is divided into sub regions. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The method includes generating one or more electromagnetic field determination expressions based on the Maxwell Equations and the Quantum Schrodinger Equation. The method includes determining an electromagnetic field associated with the mask stack region of interest based on the sub regions of the mask stack region of interest and the characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest, using the one or more electromagnetic field determination expressions.

公开(公告)号：US12210291B2

公开(公告)日：2025-01-28

申请号：US17927866

申请日：2021-05-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Xingyue Peng ,  Zhan Shi ,  Duan-Fu Stephen Hsu ,  Rafael C. Howell ,  Gerui Liu

IPC: G03F7/00

Abstract: Scanner aberration impact modeling in a semiconductor manufacturing process, which may facilitate co-optimization of multiple scanners. Scanner aberration impact modeling may include executing a calibrated model and controlling a scanner based on output from the model. The model is configured to receive patterning system aberration data. The model is calibrated with patterning system aberration calibration data and corresponding patterning process impact calibration data. New pattering process impact data may be determined, based on the model, for the received patterning system aberration data. The model includes a hyperdimensional function configured to correlate the received patterning system aberration data with the new pattering process impact data. The hyperdimensional function is configured to correlate the received patterning system aberration data with the new patterning process impact data in an approximation form, in lieu of a full simulation, without involving calculation of an aerial image or a representation thereof.

公开(公告)号：US10990003B2

公开(公告)日：2021-04-27

申请号：US16967789

申请日：2019-02-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen Hsu ,  Jingjing Liu ,  Rafael C. Howell ,  Xingyue Peng

IPC: G03F1/70 ,  G06F30/398 ,  G03F1/36

Abstract: A method to determine a mask pattern for a patterning device. The method includes obtaining a target pattern to be printed on a substrate, an initial continuous tone image corresponding to the target pattern, a binarization function (e.g., a sigmoid, an arctan, a step function, etc.) configured to transform the initial continuous tone image, and a process model configured to predict a pattern on the substrate from an output of the binarization function; and generating a binarized image having a mask pattern corresponding to the initial continuous tone image by iteratively updating the initial continuous tone image based on a cost function such that the cost function is reduced. The cost function (e.g., EPE) determines a difference between a predicted pattern determined by the process model and the target pattern.