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公开(公告)号:US20230042759A1
公开(公告)日:2023-02-09
申请号:US17968352
申请日:2022-10-18
Applicant: ASML NETHERLANDS B.V.
Inventor: Wim Tjibbo Tel , Frank Staals , Mark John Maslow , Roy Anunciado , Marinus Jochemsen , Hugo Augustinus Joseph Cramer , Thomas Theeuwes , Paul Christiaan Hinnen
IPC: G03F7/20
Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.
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公开(公告)号:US11520239B2
公开(公告)日:2022-12-06
申请号:US16075696
申请日:2017-02-17
Applicant: ASML NETHERLANDS B.V.
Inventor: Wim Tjibbo Tel , Frank Staals , Mark John Maslow , Roy Anunciado , Marinus Jochemsen , Hugo Augustinus Joseph Cramer , Thomas Theeuwes , Paul Christiaan Hinnen
IPC: G03F7/20
Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.
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公开(公告)号:US11733610B2
公开(公告)日:2023-08-22
申请号:US16722557
申请日:2019-12-20
Applicant: ASML NETHERLANDS B.V.
Inventor: Wim Tjibbo Tel , Mark John Maslow , Frank Staals , Paul Christiaan Hinnen
CPC classification number: G03F7/2043 , G03F7/705 , G03F7/70616 , G03F7/70625 , G03F7/70633 , H01L22/12 , H01L22/20
Abstract: A method involving determining a contribution that one or more process apparatuses make to a characteristic of a substrate after the substrate has been processed according to a patterning process by the one or more process apparatuses by removing from values of the characteristic of the substrate a contribution of a lithography apparatus to the characteristic and a contribution of one or more pre-lithography process apparatuses to the characteristic.
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公开(公告)号:US20220327686A1
公开(公告)日:2022-10-13
申请号:US17837096
申请日:2022-06-10
Applicant: ASML NETHERLANDS B.V..
Inventor: Adrianus Cornelis Matheus KOOPMAN , Scott Anderson Middlebrooks , Antoine Gaston Marie Kiers , Mark John Maslow
Abstract: A method for training a deep learning model of a patterning process. The method includes obtaining (i) training data comprising an input image of at least a part of a substrate having a plurality of features and a truth image, (ii) a set of classes, each class corresponding to a feature of the plurality of features of the substrate within the input image, and (iii) a deep learning model configured to receive the training data and the set of classes, generating a predicted image, by modeling and/or simulation of the deep learning model using the input image, assigning a class of the set of classes to a feature within the predicted image based on matching of the feature with a corresponding feature within the truth image, and generating, by modeling and/or simulation, a trained deep learning model by iteratively assigning weights using a loss function.
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公开(公告)号:US12197136B2
公开(公告)日:2025-01-14
申请号:US18229984
申请日:2023-08-03
Applicant: ASML NETHERLANDS B.V.
Inventor: Wim Tjibbo Tel , Mark John Maslow , Koenraad Van Ingen Schenau , Patrick Warnaar , Abraham Slachter , Roy Anunciado , Simon Hendrik Celine Van Gorp , Frank Staals , Marinus Jochemsen
IPC: G03F7/00 , G03F1/00 , G06F30/20 , G06F30/33 , G06F30/398 , G06T7/00 , G21K5/00 , H01L21/00 , H01L21/66 , G06F119/18
Abstract: A method including: obtaining an image of at least part of a substrate, wherein the image includes at least one feature manufactured on the substrate by a manufacturing process including a lithographic process and one or more further processes; determining one or more image-related metrics in dependence on a contour determined from the image, wherein one of the one or more image-related metrics is an edge placement error, EPE, of the at least one feature; and determining one or more control parameters of the lithographic process and/or the one or more further processes in dependence on the edge placement error, wherein at least one control parameter is determined so as to minimize the edge placement error of the at least one feature.
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公开(公告)号:US11768442B2
公开(公告)日:2023-09-26
申请号:US17973221
申请日:2022-10-25
Applicant: ASML NETHERLANDS B.V.
Inventor: Wim Tjibbo Tel , Mark John Maslow , Koenraad Van Ingen Schenau , Patrick Warnaar , Abraham Slachter , Roy Anunciado , Simon Hendrik Celine Van Gorp , Frank Staals , Marinus Jochemsen
IPC: G06F30/20 , G06F30/33 , G06F30/398 , G03F7/00 , G03F1/00 , G06T7/00 , G21K5/00 , H01L21/00 , H01L21/66 , G06F119/18
CPC classification number: G03F7/70625 , G06F30/20 , G06T7/0004 , H01L22/20 , G03F1/00 , G06F30/33 , G06F30/398 , G06F2119/18 , G21K5/00 , H01L21/00
Abstract: A method including: obtaining an image of at least part of a substrate, wherein the image includes at least one feature of a device being manufactured in a layer on the substrate; obtaining a layout of features associated with a previous layer adjacent to the layer on the substrate; calculating one or more image-related metrics in dependence on: 1) a contour determined from the image including the at least one feature and 2) the layout; and determining one or more control parameters of a lithographic apparatus and/or one or more further processes in a manufacturing process of the device in dependence on the one or more image-related metrics, wherein at least one of the control parameters is determined to modify the geometry of the contour in order to improve the one or more image-related metrics.
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公开(公告)号:US10571806B2
公开(公告)日:2020-02-25
申请号:US16327363
申请日:2017-08-03
Applicant: ASML NETHERLANDS B.V.
Inventor: Wim Tjibbo Tel , Mark John Maslow , Frank Staals , Paul Christiaan Hinnen
IPC: G03F7/20
Abstract: A method involving determining a contribution that one or more process apparatuses make to a characteristic of a substrate after the substrate has been processed according to a patterning process by the one or more process apparatuses by removing from values of the characteristic of the substrate a contribution of a lithography apparatus to the characteristic and a contribution of one or more pre-lithography process apparatuses to the characteristic.
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公开(公告)号:US11860548B2
公开(公告)日:2024-01-02
申请号:US17425355
申请日:2020-02-06
Applicant: ASML NETHERLANDS B.V.
Inventor: Wim Tjibbo Tel , Hermanus Adrianus Dillen , Marc Jurian Kea , Mark John Maslow , Koen Thuijs , Peter David Engblom , Ralph Timotheus Huijgen , Daan Maurits Slotboom , Johannes Catharinus Hubertus Mulkens
IPC: G03F7/00
CPC classification number: G03F7/705 , G03F7/7065 , G03F7/70525 , G03F7/70658
Abstract: A method of determining a characteristic of one or more processes for manufacturing features on a substrate, the method including: obtaining image data of a plurality of features on a least part of at least one region on a substrate; using the image data to obtain measured data of one or more dimensions of each of at least some of the plurality of features; determining a statistical parameter that is dependent on the variation of the measured data of one or more dimensions of each of at least some of the plurality of features; determining a probability of defective manufacture of features in dependence on a determined number of defective features in the image data; and determining the characteristic of the one or more processes to have the probability of defective manufacture of features and the statistical parameter.
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公开(公告)号:US11847570B2
公开(公告)日:2023-12-19
申请号:US17837096
申请日:2022-06-10
Applicant: ASML NETHERLANDS B.V.
Inventor: Adrianus Cornelis Matheus Koopman , Scott Anderson Middlebrooks , Antoine Gaston Marie Kiers , Mark John Maslow
IPC: G06N3/08 , G06N3/084 , G06T7/11 , G03F7/00 , G06T7/00 , G06F18/214 , G06F18/2431 , G06F18/2413 , G06V10/764 , G06V10/82
CPC classification number: G06N3/084 , G03F7/705 , G06F18/214 , G06F18/2431 , G06F18/24133 , G06N3/08 , G06T7/0004 , G06T7/11 , G06V10/764 , G06V10/82 , G06T2207/30148
Abstract: A method for training a deep learning model of a patterning process. The method includes obtaining (i) training data comprising an input image of at least a part of a substrate having a plurality of features and a truth image, (ii) a set of classes, each class corresponding to a feature of the plurality of features of the substrate within the input image, and (iii) a deep learning model configured to receive the training data and the set of classes, generating a predicted image, by modeling and/or simulation of the deep learning model using the input image, assigning a class of the set of classes to a feature within the predicted image based on matching of the feature with a corresponding feature within the truth image, and generating, by modeling and/or simulation, a trained deep learning model by iteratively assigning weights using a loss function.
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公开(公告)号:US11513442B2
公开(公告)日:2022-11-29
申请号:US16644206
申请日:2018-08-22
Applicant: ASML NETHERLANDS B.V.
Inventor: Wim Tjibbo Tel , Mark John Maslow , Koenraad Van Ingen Schenau , Patrick Warnaar , Abraham Slachter , Roy Anunciado , Simon Hendrik Celine Van Gorp , Frank Staals , Marinus Jochemsen
IPC: G03F7/00 , G03F1/00 , G06T7/00 , H01L21/00 , G06F30/20 , G21K5/00 , G03F7/20 , H01L21/66 , G06F119/18
Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.
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