公开(公告)号：US11662323B2

公开(公告)日：2023-05-30

申请号：US17020574

申请日：2020-09-14

Applicant: ASML Netherlands B. V.

Inventor： Guochong Weng ,  Youjin Wang ,  Chiyan Kuan ,  Chung-Shih Pan

IPC: G01N23/2251 ,  H05F3/02 ,  H01J37/20 ,  H01J37/02 ,  H01J37/28

CPC classification number: G01N23/2251 ,  H01J37/026 ,  H01J37/20 ,  H01J37/28 ,  H05F3/02 ,  H01J2237/004 ,  H01J2237/0041 ,  H01J2237/0044 ,  H01J2237/202 ,  H01J2237/2007 ,  H01J2237/2008 ,  H01J2237/2448 ,  H01J2237/2602 ,  H01J2237/2811 ,  H01J2237/2813

Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EU mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

公开(公告)号：US20210172891A1

公开(公告)日：2021-06-10

申请号：US17020574

申请日：2020-09-14

Applicant: ASML Netherlands B. V.

Inventor： Guochong Weng ,  Youjin Wang ,  Chiyan Kuan ,  Chung-Shih Pan

IPC: G01N23/2251 ,  H05F3/02 ,  H01J37/20 ,  H01J37/02 ,  H01J37/28

Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EU mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.