公开(公告)号：US11448974B2

公开(公告)日：2022-09-20

申请号：US17207936

申请日：2021-03-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Narjes Javaheri ,  Mohammadreza Hajiahmadi ,  Olger Victor Zwier ,  Gonzalo Roberto Sanguinetti

IPC: G03F7/20 ,  G01M11/02 ,  G01M11/00

Abstract: A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.

公开(公告)号：US12105432B2

公开(公告)日：2024-10-01

申请号：US17625640

申请日：2020-07-07

Applicant: ASML Netherlands B.V.

Inventor： Narjes Javaheri ,  Maurits Van Der Schaar ,  Tieh-Ming Chang ,  Hilko Dirk Bos ,  Patrick Warnaar ,  Samira Bahrami ,  Mohammadreza Hajiahmadi ,  Sergey Tarabrin ,  Mykhailo Semkiv

IPC: G03F7/00

CPC classification number: G03F7/70633

Abstract: Disclosed is a method comprising measuring radiation reflected from a metrology target and decomposing the measured radiation in components, for example Fourier components or spatial components. Further, there is disclosed a recipe selection method which provides an algorithm to select a parameter of the metrology apparatus based on re-calculated dependencies of 5 the measured radiation based on single components.

公开(公告)号：US10990020B2

公开(公告)日：2021-04-27

申请号：US15964643

申请日：2018-04-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Narjes Javaheri ,  Mohammadreza Hajiahmadi ,  Olger Victor Zwier ,  Gonzalo Roberto Sanguinetti

IPC: G03F7/20 ,  G01M11/02 ,  G01M11/00

Abstract: A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.

公开(公告)号：US10705437B2

公开(公告)日：2020-07-07

申请号：US16155424

申请日：2018-10-09

Applicant: ASML Netherlands B.V.

Inventor： Narjes Javaheri ,  Mohammadreza Hajiahmadi ,  Murat Bozkurt ,  Alberto Da Costa Assafrao ,  Marc Johannes Noot ,  Simon Gijsbert Josephus Mathijssen ,  Jin Lian

IPC: G03F7/20 ,  G01N21/47 ,  G01B11/24 ,  G01B11/30 ,  H01L23/544

Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.